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Type FET. 2SK4059TK Datasheet

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Type FET. 2SK4059TK Datasheet
















2SK4059TK FET. Datasheet pdf. Equivalent













Part

2SK4059TK

Description

Silicon N-Channel MOS Type FET



Feature


2SK4059TK TOSHIBA Field Effect Transisto r Silicon N Channel Junction Type 2SK4 059TK For ECM • Application for compa ct ECM 0.22±0.05 1.2±0.05 0.8±0.05 0 .32±0.05 3 2 0.1±0.05 Unit: mm Abso lute Maximum Ratings (Ta=25°C) 0.45 0. 45 1.4±0.05 www.DataSheet4U.com Char acteristic Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 −55~125 Unit V mA mW °C Gate-Drain voltage.
Manufacture

Toshiba Semiconductor

Datasheet
Download 2SK4059TK Datasheet


Toshiba Semiconductor 2SK4059TK

2SK4059TK; Gate Current Drain power dissipation (T a = 25°C) Junction Temperature Storage temperature range Note: Using contin uously under heavy loads (e.g. the appl ication of high temperature/current/vol tage and the significant change in temp erature, etc.) may cause this product t o decrease in the reliability significa ntly even if the operating conditions ( i.e. operating temp.


Toshiba Semiconductor 2SK4059TK

erature/current/voltage, etc.) are withi n the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Re liability Handbook (“Handling Precaut ions”/“Derating Concept and Methods ”) and individual reliability data (i .e. reliability test report and estimat ed failure rate, etc). 0.395±0.03 ° C 0.9±0.1 1 TESM3 1.Drai.


Toshiba Semiconductor 2SK4059TK

n 2.Source 3.Gate 2-1R1A JEDEC JEITA TO SHIBA Weight: 2.2mg (typ.) IDSS CLASS IFICATION A-Rank 140~240µA B-Rank 210~ 350µA BK-Rank 210~400µA C-Rank 320~50 0µA Marking Type Name Equivalent Cir cuit D 8 IDSS Classification Symbol A :A -Rank B :B-Rank BK-Rank C :C-Rank G S 1 2007-11-01 2SK4059TK Electric al Characteristics (Ta=25°C) Character istic Symbol Test Condi.





Part

2SK4059TK

Description

Silicon N-Channel MOS Type FET



Feature


2SK4059TK TOSHIBA Field Effect Transisto r Silicon N Channel Junction Type 2SK4 059TK For ECM • Application for compa ct ECM 0.22±0.05 1.2±0.05 0.8±0.05 0 .32±0.05 3 2 0.1±0.05 Unit: mm Abso lute Maximum Ratings (Ta=25°C) 0.45 0. 45 1.4±0.05 www.DataSheet4U.com Char acteristic Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 −55~125 Unit V mA mW °C Gate-Drain voltage.
Manufacture

Toshiba Semiconductor

Datasheet
Download 2SK4059TK Datasheet




 2SK4059TK
2SK4059TK
For ECM
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK4059TK
Application for compact ECM
Absolute Maximum Ratings (Ta=25°C)
www.DataSheet4U.com
Characteristic
Gate-Drain voltage
Gate Current
Drain power dissipation (Ta = 25°C)
Junction Temperature
Storage temperature range
Symbol
VGDO
IG
PD
Tj
Tstg
Rating
-20
10
100
125
55~125
Unit
V
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
IDSS CLASSIFICATION
A-Rank 140~240µA
B-Rank 210~350µA
BK-Rank 210~400µA
C-Rank 320~500µA
Unit: mm
1.2±0.05
0.8±0.05
1
3
2
TESM3
1.Drain
2.Source
3.Gate
JEDEC
-
JEITA
-
TOSHIBA
2-1R1A
Weight: 2.2mg (typ.)
Marking
8
Type Name
IDSS Classification Symbol
A :A-Rank
B :B-Rank BK-Rank
C :C-Rank
Equivalent Circuit
D
G
S
1 2007-11-01




 2SK4059TK
2SK4059TK
Electrical Characteristics (Ta=25°C)
Characteristic
Symbol
Test Condition
Min Typ. Max Unit
A 140
Drain Current
IDSS VDS = 2 V, VGS = 0
B 210
BK 210
C 320
A 125
www.DataSheetD4Ura.icnoCmurrent
ID VDD = 2 V, RL= 2.2kΩ,Cg = 5pF
B 190
BK 190
C 290
Gate-Source Cut-off Voltage VGS(OFF) VDS = 2 V, ID = 1μA
Forward transfer admittance
|Yfs| VDS = 2 V,VGS = 0V
Gate-Drain Voltage
V(BR)GDO IG=-10μA
Input capacitance
Ciss VDS = 2 V, VGS = 0, f = 1 MHz
-0.1
1.35
-20
A -1.2
Voltage Gain
Gv VDD = 2V, RL= 2.2kΩ,Cg = 5pF, f = 1kHz,vin=100mV
B -0.2
BK -0.2
C +0.5
Delta Voltage Gain
DGv(f)
VDD = 2V, RL= 2.2kΩ,Cg = 5pF,f = 1kHz~100Hz,vin=100mV
A
Delta Voltage Gain
DGv(V)
VDD = 2V~1.5V, RL= 2.2kΩ,Cg = 5pF,f = 1kHz,
vin=100mV
B
BK
C
A
Noise Voltage
B
VN VDD = 2V, RL= 1kΩ,Cg = 10pF,Gv=80dB, A-Curve Filter
BK
C
A
Total Harmonic Distortion
THD VDD = 2V, RL= 2.2kΩ,Cg = 5pF, f = 1kHz, vin=50mV
B
BK
C
Time Output Stability
tos VDD = 2V, RL= 2.2kΩ,Cg = 5pF
1.85
4.0
+0.9
+1.4
+1.7
+1.8
0
-0.6
-0.8
-1.1
-1.4
33
38
40
42
1.3
0.6
0.5
0.1
100
240
350
400
500
260
370
420
500
-1.0
-1
-1.1
-1.7
-2.0
-3.2
75
80
85
90
200
µA
µA
V
mS
V
pF
dB
dB
dB
mV
%
ms
Time Output Stability Test Method
a) TEST CIRCUIT
VDD=2.0V
Vout
b) TEST SIGNAL
VDD
2V
0V
Vout
VDD-ID*RL
0V
2
50%
90%
tos
2007-11-01




 2SK4059TK
ID – VGS
600
VDS=2V
Common Source
500 Ta = 25 °C
400
IDSS=470μA
300
IDSS=250μA
200
100
www.DataSheet4U.com
0
-1.0
IDSS=170μA
-0.8 -0.6 -0.4 -0.2
Gate - Source voltage VGS (V)
0
2SK4059TK
ID – VGS
600
VDS=2V
Common Source
500
400
Ta=85
300
Ta=25
200
Ta=-40
100
0
-1.0 -0.8 -0.6 -0.4 -0.2
Gate - Source voltage VGS (V)
0
|Yfs| – IDSS
3
2
1 |Yfs|:VDS=2V
VGS=0V
IDSS: VDS=2V
VGS=0V
Common Source
0 Ta = 25 °C
100 200 300 400 500 600
Drain Current IDSS (µA)
2.5
Gv:VDD=2V
Cg=5pF
Gv– IDSS
RL= 2.2kΩ,
2.0 f=1kHz
vin=100mV
IDSS: VDS=2V
1.5
VGS=0V
Common Source
Ta = 25°C
1.0
0.5
0
0 100 200 300 400 500 600
Drain Current IDSS (µA)
VGS(OFF) – IDSS
-500
-400
-300
-200
-100
0
0
VGS(OFF):VDS=2V
ID = 1μA
IDSS:VDS=2V
VGS=0V
Common Source
Ta = 25 °C
100 200 300 400 500 600
Drain Current IDSS (µA)
DGv(V)– IDSS
-3.0 DGv:VDD=2V1.5V
Cg=5pF
-2.5
RL= 2.2kΩ,
f=1kHz
vin=100mV
-2.0 IDSS: VDS=2V
VGS=0V
Common Source
-1.5 Ta = 25°C
-1.0
-0.5
0
0 100 200 300 400 500 600
Drain Current IDSS (µA)
3 2007-11-01




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