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Type FET. 2SK4059TV Datasheet

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Type FET. 2SK4059TV Datasheet
















2SK4059TV FET. Datasheet pdf. Equivalent













Part

2SK4059TV

Description

Silicon N-Channel MOS Type FET



Feature


2SK4059TV TOSHIBA Field Effect Transisto r Silicon N Channel Junction Type 2SK4 059TV For ECM • Application for Ultra -compact ECM 0.2±0.05 1.2±0.05 0.3±0 .05 3 0.8±0.05 Unit: mm 1.2±0.05 0 .8±0.1 Absolute Maximum Ratings (Ta=2 5°C) www.DataSheet4U.com Characteristi c Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 −55~125 Unit V mA mW °C C 0.4 1 2 Gate-Drain voltag.
Manufacture

Toshiba Semiconductor

Datasheet
Download 2SK4059TV Datasheet


Toshiba Semiconductor 2SK4059TV

2SK4059TV; e Gate Current Drain power dissipation ( Ta = 25°C) Junction Temperature Storag e temperature range 0.4 0.28±0.02 N ote: Using continuously under heavy lo ads (e.g. the application of high tempe rature/current/voltage and the signific ant change in temperature, etc.) may ca use this product to decrease in the rel iability significantly even if the oper ating conditions (i..


Toshiba Semiconductor 2SK4059TV

e. operating temperature/current/voltage , etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions”/“Derating Co ncept and Methods”) and individual re liability data (i.e. reliability test r eport and estimated failure rate, etc). VESM2 JEDEC JEITA TOSHIB.


Toshiba Semiconductor 2SK4059TV

A 1.Drain 2.Source 3.Gate 2-1H1A Weig ht: 0.8mg (typ.) IDSS CLASSIFICATION A -Rank 140~240µA B-Rank 210~350µA BK-R ank 210~400µA C-Rank 320~500µA Marki ng Type Name Top Gate Lot Code IDSS Cla ssification Symbol A :A-Rank B :B-Rank BK-Rank C :C-Rank Equivalent Circuit D 8 □ G S Precaution There is a me tal plate on the top of package, which has the same electrical .





Part

2SK4059TV

Description

Silicon N-Channel MOS Type FET



Feature


2SK4059TV TOSHIBA Field Effect Transisto r Silicon N Channel Junction Type 2SK4 059TV For ECM • Application for Ultra -compact ECM 0.2±0.05 1.2±0.05 0.3±0 .05 3 0.8±0.05 Unit: mm 1.2±0.05 0 .8±0.1 Absolute Maximum Ratings (Ta=2 5°C) www.DataSheet4U.com Characteristi c Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 −55~125 Unit V mA mW °C C 0.4 1 2 Gate-Drain voltag.
Manufacture

Toshiba Semiconductor

Datasheet
Download 2SK4059TV Datasheet




 2SK4059TV
2SK4059TV
For ECM
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK4059TV
Application for Ultra-compact ECM
1.2±0.05
0.8±0.05
Unit: mm
Absolute Maximum Ratings (Ta=25°C)
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Characteristic
Gate-Drain voltage
Gate Current
Drain power dissipation (Ta = 25°C)
Junction Temperature
Storage temperature range
Symbol
VGDO
IG
PD
Tj
Tstg
Rating
-20
10
100
125
55~125
Unit
V
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
1
23
VESM2
1.Drain
2.Source
3.Gate
JEDEC
-
JEITA
-
TOSHIBA
2-1H1A
Weight: 0.8mg (typ.)
IDSS CLASSIFICATION
A-Rank 140~240µA
B-Rank 210~350µA
BK-Rank 210~400µA
C-Rank 320~500µA
Marking
8
Type Name
Top Gate
Lot Code
IDSS Classification Symbol
A :A-Rank
B :B-Rank BK-Rank
C :C-Rank
Equivalent Circuit
D
G
S
Precaution
There is a metal plate on the top of package, which has the same electrical potential as the Gate terminal. Don’t use
it as a terminal.
1 2007-11-01




 2SK4059TV
Electrical Characteristics (Ta=25°C)
2SK4059TV
Characteristic
Symbol
Test Condition
Min Typ. Max Unit
A 140
Drain Current
IDSS VDS = 2 V, VGS = 0
B 210
BK 210
C 320
A 125
Drain Current
ID VDD = 2 V, RL= 2.2kΩ,Cg = 5pF
B 190
BK 190
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Gate-Source Cut-off Voltage VGS(OFF) VDS = 2 V, ID = 1μA
Forward transfer admittance
|Yfs| VDS = 2 V,VGS = 0V
Gate-Drain Voltage
V(BR)GDO IG=-10μA
Input capacitance
Ciss VDS = 2 V, VGS = 0, f = 1 MHz
C 290
-0.1
1.35
-20
A -1.2
Voltage Gain
Gv VDD = 2V, RL= 2.2kΩ,Cg = 5pF, f = 1kHz,vin=100mV
B -0.2
BK -0.2
C +0.5
Delta Voltage Gain
DGv(f)
VDD = 2V, RL= 2.2kΩ,Cg = 5pF,f = 1kHz~100Hz,vin=100mV
A
Delta Voltage Gain
DGv(V)
VDD = 2V~1.5V, RL= 2.2kΩ,Cg = 5pF,f = 1kHz,
vin=100mV
B
BK
C
A
Noise Voltage
B
VN VDD = 2V, RL= 1kΩ,Cg = 10pF,Gv=80dB, A-Curve Filter
BK
C
A
Total Harmonic Distortion
THD VDD = 2V, RL= 2.2kΩ,Cg = 5pF, f = 1kHz, vin=50mV
B
BK
C
Time Output Stability
tos VDD = 2V, RL= 2.2kΩ,Cg = 5pF
1.85
4.0
+0.9
+1.4
+1.7
+1.8
0
-0.6
-0.8
-1.1
-1.4
33
38
40
42
1.3
0.6
0.5
0.1
100
240
350
400
500
260
370
420
500
-1.0
-1
-1.1
-1.7
-2.0
-3.2
75
80
85
90
200
µA
µA
V
mS
V
pF
dB
dB
dB
mV
%
ms
Time Output Stability Test Method
a) TEST CIRCUIT
b) TEST SIGNAL
VDD=2.0V
Vout
VDD
2V
0V
Vout
VDD-ID*RL
0V
50%
90%
tos
2 2007-11-01




 2SK4059TV
ID – VGS
600
VDS=2V
Common Source
500 Ta = 25 °C
400
IDSS=470μA
300
IDSS=250μA
200
100
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0
-1.0
IDSS=170μA
-0.8 -0.6 -0.4 -0.2
Gate - Source voltage VGS (V)
0
2SK4059TV
ID – VGS
600
VDS=2V
Common Source
500
400
Ta=85
300
Ta=25
200
Ta=-40
100
0
-1.0 -0.8 -0.6 -0.4 -0.2
Gate - Source voltage VGS (V)
0
|Yfs| – IDSS
3
2
1 |Yfs|:VDS=2V
VGS=0V
IDSS: VDS=2V
VGS=0V
Common Source
0 Ta = 25 °C
100 200 300 400 500 600
Drain Current IDSS (µA)
2.5
Gv:VDD=2V
Cg=5pF
Gv– IDSS
RL= 2.2kΩ,
2.0 f=1kHz
vin=100mV
IDSS: VDS=2V
1.5
VGS=0V
Common Source
Ta = 25°C
1.0
0.5
0
0 100 200 300 400 500 600
Drain Current IDSS (µA)
VGS(OFF) – IDSS
-500
-400
-300
-200
-100
0
0
VGS(OFF):VDS=2V
ID = 1μA
IDSS:VDS=2V
VGS=0V
Common Source
Ta = 25 °C
100 200 300 400 500 600
Drain Current IDSS (µA)
DGv(V)– IDSS
-3.0 DGv:VDD=2V1.5V
Cg=5pF
-2.5
RL= 2.2kΩ,
f=1kHz
vin=100mV
-2.0 IDSS: VDS=2V
VGS=0V
Common Source
-1.5 Ta = 25°C
-1.0
-0.5
0
0 100 200 300 400 500 600
Drain Current IDSS (µA)
3 2007-11-01




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