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2SC2295. C2295 Datasheet

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2SC2295. C2295 Datasheet
















C2295 2SC2295. Datasheet pdf. Equivalent













Part

C2295

Description

2SC2295



Feature


Transistors 2SC2295 Silicon NPN epitaxia l planar type For high-frequency ampli fication Complementary to 2SA1022 0.40 +–00..0150 Unit: mm 0.16+–00..0160 3 1.50–+00..0255 2.8–+00..32 Features 0.4±0.2 • Optimum for R F amplification of FM/AM radios 5˚ High transition frequency fT • Min i type package, allowing downsizing of the equipment and automatic insertio.
Manufacture

Panasonic

Datasheet
Download C2295 Datasheet


Panasonic C2295

C2295; n through the tape packing and the magaz ine packing 1 2 (0.95) (0.95) 1.9±0 .1 2.90+–00..0250 (0.65) / ■ Abso lute Maximum Ratings Ta = 25°C e pe) Parameter Symbol Rating Unit c e. d ty Collector-base voltage (Emitter open ) VCBO 30 V n d stag tinue Collector -emitter voltage (Base open) VCEO 20 0 to 0.1 1.1–+00..12 1.1–+00..13 V a e cle con Emitter-base v.


Panasonic C2295

oltage (Collector open) VEBO 5 V life cy , dis Collector current IC 30 mA n u duct typed Collector power dissipa tion PC 200 mW te tin Pro ed Juncti on temperature Tj 150 °C four ntin u Storage temperature Tstg −55 to +1 50 °C 10˚ Marking Symbol: V 1: Bas e 2: Emitter 3: Collector EIAJ: SC-59 M ini3-G1 Package in n s followliannged disco ■ Electrical Char.


Panasonic C2295

acteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions Mi n Typ Max Unit c d inc e typ Collector -base cutoff current (Emitter open) ICB O VCB = 10 V, IE = 0 0.1 µA tinue a nc Forward current transfer ratio * hF E VCB = 10 V, IE = −1 mA 70 220 M is con inten Transition frequency fT VCB = 10 V, IE = −1 mA, f = 200 MHz 150 250 MHz /Dis ma No.





Part

C2295

Description

2SC2295



Feature


Transistors 2SC2295 Silicon NPN epitaxia l planar type For high-frequency ampli fication Complementary to 2SA1022 0.40 +–00..0150 Unit: mm 0.16+–00..0160 3 1.50–+00..0255 2.8–+00..32 Features 0.4±0.2 • Optimum for R F amplification of FM/AM radios 5˚ High transition frequency fT • Min i type package, allowing downsizing of the equipment and automatic insertio.
Manufacture

Panasonic

Datasheet
Download C2295 Datasheet




 C2295
Transistors
2SC2295
Silicon NPN epitaxial planar type
For high-frequency amplification
Complementary to 2SA1022
0.40+–00..0150
Unit: mm
0.16+–00..0160
3
Features
Optimum for RF amplification of FM/AM radios
High transition frequency fT
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
1
2
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
/ Absolute Maximum Ratings Ta = 25°C
e pe) Parameter
Symbol Rating
Unit
c e. d ty Collector-base voltage (Emitter open) VCBO
30
V
n d stag tinue Collector-emitter voltage (Base open) VCEO
20
V
a e cle con Emitter-base voltage (Collector open) VEBO
5
V
lifecy , dis Collector current
IC
30
mA
n u duct typed Collector power dissipation
PC
200
mW
te tin Pro ed Junction temperature
Tj
150
°C
four ntinu Storage temperature
Tstg 55 to +150 °C
10˚
Marking Symbol: V
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
in n s followliannged disco Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
Min Typ Max Unit
c d inc e typ Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0
0.1
µA
tinue anc Forward current transfer ratio *
hFE VCB = 10 V, IE = −1 mA
70
220
M is con inten Transition frequency
fT
VCB = 10 V, IE = −1 mA, f = 200 MHz 150 250
MHz
/Dis ma Noise figure
NF VCB = 10 V, IE = −1 mA, f = 5 MHz
2.8 4.0
dB
D ance type, Reverse transfer impedance
Zrb VCB = 10 V, IE = −1 mA, f = 2 MHz
22 50
ten ce Reverse transfer capacitance
ain nan (Common emitter)
Cre VCB = 10 V, IE = −1 mA, f = 10.7 MHz
0.9 1.5
pF
M inte Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
d ma 2. *: Rank classification
(plane Rank
B
C
hFE
70 to 140 110 to 220
Publication date: March 2003
SJC00112BED
1




 C2295
2SC2295
PC Ta
240
200
160
120
IC VCE
12
15.0
Ta = 25°C
10
IB = 100 µA
12.5
8
80 µA
10.0
60 µA
6
7.5
IC IB
VCE = 10 V
Ta = 25°C
80
4
40 µA
5.0
40
2
20 µA
2.5
0
0
40
80
120
160
Ambient temperature Ta (°C)
0
0
6
12
18
Collector-emitter voltage VCE (V)
0
0
20 40 60 80 100
Base current IB (µA)
e/ pe) IB VBE
c ty 120
n d ge. ed VCE=10V
sta tinu Ta = 25°C
le n 100
a elifecyc , disco 80
n uroduct d typed 60
te tinfourPontinue 40
in n llowing ddisc 20
a o ludes foe, plane 0
c p 0 0.2 0.4 0.6 0.8 1.0
c d in e ty Base-emitter voltage VBE (V)
IC VBE
60
VCE = 10 V
50
25°C
40
Ta = 75°C
30
25°C
20
10
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
VCE(sat) IC
100
IC / IB = 10
10
1
Ta = 75°C
25°C
0.1
25°C
0.01
0.1
1
10
100
Collector current IC (mA)
M is/Discontimnuaeintenanc hFE IC
e e, 240
400
D anc typ VCE = 10 V
inten nce 200
a na300
M ainte 160
Ta = 75°C
d m 25°C
ne 120
200
(pla 25°C
fT IE
Zrb IE
60
VCB = 10 V
f = 2 MHz
Ta = 25°C
50
40
30
80
20
40
0
0.1
1
10
100
Collector current IC (mA)
100
0
0.1
VCB = 10 V
f = 100 MHz
Ta = 25°C
1
10
100
Emitter current IE (mA)
10
0
0.1
1
10
Emitter current IE (mA)
2
SJC00112BED




 C2295
2SC2295
Cre VCE
3.0
12
f = 10.7 MHz
Ta = 25°C
2.5
10
2.0
8
IC = 3 mA
1 mA
1.5
6
NF IE
VCB = 6 V
f = 100 MHz
Rg = 50
Ta = 25°C
bie gie
24
Vie = gie + jbie
VCE = 10 V
20
7 mA
4 mA
100
16
2 mA
58
12
1.0
4
8
0.5
0
0.1
1
10
100
Collector-emitter voltage VCE (V)
2
0
0.1
1
10
Emitter current IE (mA)
4
f = 10.7 MHz
0
0
8
16 24 32 40
Input conductance gie (mS)
ce/ type) 0
n dle stage.ntinued 0.1
bre gre
yre = gre + jbre
VCE = 10 V
f = 10.7 MHz
a elifecyc , disco 0.2
IE = −1 mA
n uroduct d typed 0.3
58
te tinfourP ntinue 0.4
g co 100
in n llowin ddis 0.5
des fo , plane 0.6
a o clu pe 0.5 0.4 0.3 0.2 0.1 0
M Disc (planeMdaminatiennteannacnec/Deitsycpoen,timnuaeindteinnance ty Reverse transfer conductance gre (mS)
bfe gfe
0
0.1 mA
f = 10.7 MHz 10.7
58
1 mA 100
20
58
2 mA 100
40
60
IE = −4 mA
100
58
80
100
120
0
yfe = gfe + jbfe
VCE = 10 V
20 40 60 80 100
Forward transfer conductance gfe (mS)
boe goe
1.2
yoe = goe + jboe
VCE = 10 V
1.0
0.8 IE = −1 mA
100
0.6
58
0.4
0.2
f = 10.7 MHz
0
0 0.1 0.2 0.3 0.4 0.5
Output conductance goe (mS)
SJC00112BED
3




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