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CY14B101L Datasheet, Equivalent, 8 nvSRAM.

1-Mbit (128K x 8) nvSRAM

1-Mbit (128K x 8) nvSRAM

 

 

 

Part CY14B101L
Description 1-Mbit (128K x 8) nvSRAM
Feature PRELIMINARY CY14B101L 1-Mbit (128K x 8 ) nvSRAM Features
• 25 ns, 35 ns, and 45 ns access times
• “Hands-off” automatic STORE on power down with onl y a small capacitor
• STORE to Quantu mTrapTM nonvolatile elements is initiat ed by software, device pin, or Autostor eTM on power down
• RECALL to SRAM in itiated by software or power up www.
Dat aSheet4U.
com
• Infinite READ, WRITE, and RECALL cycles
• 10 mA typical ICC at 200 ns cycle time
• 200,000 STORE cycles to quantum trap
• 20-year dat a retention @ 55°C
• Single 3V opera tion +20%, –10%
• Commercial and in dustrial temperature
• SOIC and SSOP pack .
Manufacture Cypress Semiconductor
Datasheet
Download CY14B101L Datasheet
Part CY14B101L
Description 1-Mbit (128K x 8) nvSRAM
Feature PRELIMINARY CY14B101L 1-Mbit (128K x 8 ) nvSRAM Features
• 25 ns, 35 ns, and 45 ns access times
• “Hands-off” automatic STORE on power down with onl y a small capacitor
• STORE to Quantu mTrapTM nonvolatile elements is initiat ed by software, device pin, or Autostor eTM on power down
• RECALL to SRAM in itiated by software or power up www.
Dat aSheet4U.
com
• Infinite READ, WRITE, and RECALL cycles
• 10 mA typical ICC at 200 ns cycle time
• 200,000 STORE cycles to quantum trap
• 20-year dat a retention @ 55°C
• Single 3V opera tion +20%, –10%
• Commercial and in dustrial temperature
• SOIC and SSOP pack .
Manufacture Cypress Semiconductor
Datasheet
Download CY14B101L Datasheet

CY14B101L

CY14B101L
CY14B101L

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