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RF Amplifier. BB504C Datasheet

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RF Amplifier. BB504C Datasheet






BB504C Amplifier. Datasheet pdf. Equivalent




BB504C Amplifier. Datasheet pdf. Equivalent





Part

BB504C

Description

Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier



Feature


BB504C Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier ADE-208-983D ( Z) 5th. Edition Dec. 2000 Features www. DataSheet4U.com • Build in Biasing ⠀¢ • • • Circuit; To reduce usin g parts cost & PC board space. Low nois e; NF = 1.0 dB typ. at f = 200 MHz,NF = 1.75 dB typ. at f =900 MHz High gain; P G = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz Withs.
Manufacture

Hitachi Semiconductor

Datasheet
Download BB504C Datasheet


Hitachi Semiconductor BB504C

BB504C; tanding to ESD; Build in ESD absorbing d iode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Provide mini mol d packages; CMPAK-4 (SOT-343mod) Outli ne CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. 2. Mark ing is “DS–”. BB504C is individua l type number of HITACHI BBFET. BB504C Absolute Maximum Ratings (Ta = 25°C) Item Drain to source volt.


Hitachi Semiconductor BB504C

age Gate1 to source voltage Gate2 to sou rce voltage Drain current Channel power dissipation Channel temperature Storag e temperature www.DataSheet4U.com Symb ol VDS VG1S VG2S ID Pch Tch Tstg Ratin gs 6 +6 –0 +6 –0 30 100 150 –55 t o +150 Unit V V V mA mW °C °C Elect rical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate 1 to source breakdown volta.


Hitachi Semiconductor BB504C

ge Gate2 to source breakdown voltage Sym bol V(BR)DSS V(BR)G1SS V(BR)G2SS Min 6 +6 +6 — — 0.6 0.6 13 24 1.7 1.0 — 25 — 17 — Typ — — — — — 0.85 0.85 16 29 2.1 1.4 0.027 30 1.0 22 1.75 Max — — — +100 +100 1.1 1.1 19 34 2.5 1.8 0.05 — 1.8 — 2.3 Uni t V V V nA nA V V mA mS pF pF pF dB dB dB dB Test Conditions I D = 200µA, VG1 S = VG2S = 0 I G1 = +10 µA, VG2S = VDS = 0 I G2 =.

Part

BB504C

Description

Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier



Feature


BB504C Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier ADE-208-983D ( Z) 5th. Edition Dec. 2000 Features www. DataSheet4U.com • Build in Biasing ⠀¢ • • • Circuit; To reduce usin g parts cost & PC board space. Low nois e; NF = 1.0 dB typ. at f = 200 MHz,NF = 1.75 dB typ. at f =900 MHz High gain; P G = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz Withs.
Manufacture

Hitachi Semiconductor

Datasheet
Download BB504C Datasheet




 BB504C
BB504C
Build in Biasing Circuit MOS FET IC
VHF&UHF RF Amplifier
ADE-208-983D (Z)
5th. Edition
Dec. 2000
Features
www.Data•SheBeut4ilUd.cinomBiasing Circuit; To reduce using parts cost & PC board space.
• Low noise; NF = 1.0 dB typ. at f = 200 MHz,NF =1.75 dB typ. at f =900 MHz
• High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
• Provide mini mold packages; CMPAK-4 (SOT-343mod)
Outline
CMPAK-4
Notes:
2
3
1
4 1. Source
2. Gate1
3. Gate2
4. Drain
1. Marking is “DS–”.
2. BB504C is individual type number of HITACHI BBFET.




 BB504C
BB504C
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Symbol
VDS
VG1S
Gate2 to source voltage
VG2S
Drain current
Channel power dissipation
Channel temperature
Storage temperature
www.DataSheet4U.com
ID
Pch
Tch
Tstg
Ratings
6
+6
–0
+6
–0
30
100
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
6
Gate1 to source breakdown
voltage
V(BR)G1SS +6
Gate2 to source breakdown
voltage
V(BR)G2SS +6
Gate1 to source cutoff current IG1SS
Gate2 to source cutoff current IG2SS
Gate1 to source cutoff voltage VG1S(off)
Gate2 to source cutoff voltage VG2S(off)
Drain current
I D(op)
—
—
0.6
0.6
13
Forward transfer admittance |yfs|
24
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain (1)
c iss
c oss
c rss
PG
1.7
1.0
—
25
Noise figure (1)
Power gain (2)
NF —
PG 17
Noise figure (2)
NF —
Typ Max Unit Test Conditions
——V
ID = 200µA, VG1S = VG2S = 0
——V
IG1 = +10µA, VG2S = VDS = 0
——V
IG2 = +10µA, VG1S = VDS = 0
— +100 nA
— +100 nA
0.85 1.1 V
0.85 1.1 V
16 19 mA
29 34 mS
2.1
1.4
0.027
30
2.5
1.8
0.05
—
pF
pF
pF
dB
1.0 1.8 dB
22 — dB
1.75 2.3 dB
VG1S = +5V, VG2S = VDS = 0
VG2S = +5V, VG1S = VDS = 0
VDS = 5V, VG2S = 4V, ID = 100µA
VDS = 5V, VG1S = 5V, ID = 100µA
VDS = 5V, VG1 = 5V
VG2S = 4V, RG = 120kΩ
VDS = 5V, VG1 = 5V, VG2S =4V
RG = 120kΩ, f = 1kHz
VDS = 5V, VG1 = 5V
VG2S =4V, RG = 120kΩ
f = 1MHz
VDS = 5V, VG1 = 5V
VG2S =4V, RG = 120kΩ
f = 200MHz
VDS = 5V, VG1 = 5V
VG2S =4V, RG = 120kΩ
f = 900MHz
2




 BB504C
BB504C
Test Circuits
• DC Biasing Circuit for Operating Characteristics Items (ID(op), |yfs|, Ciss, Coss, Crss, NF, PG)
VG2
Gate 2
RG
Gate 1
VG1
www.DataSheet4U.com
Drain
A
ID
Source
• 200MHz Power Gain, Noise Figure Test Circuit
VT
1000p
VG2
1000p
VT
1000p
Input(50Ω)
1000p
1000p
47k
47k
BBFET
L1
36p
1000p
1SV70
R G 120k
47k
L2 1000p
Output(50Ω)
10p max
RFC
1SV70
1000p
V D= V G1
Unit Resistance (Ω)
Capacitance (F)
L1 : Φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 : Φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC : Φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns
3



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