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IRG4PH50UD. G4PH50UD Datasheet

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IRG4PH50UD. G4PH50UD Datasheet






G4PH50UD IRG4PH50UD. Datasheet pdf. Equivalent




G4PH50UD IRG4PH50UD. Datasheet pdf. Equivalent





Part

G4PH50UD

Description

IRG4PH50UD



Feature


PD 91573A IRG4PH50UD INSULATED GATE BIP OLAR TRANSISTOR WITH ULTRAFAST SOFT REC OVERY DIODE Features • UltraFast: Opt imized for high operating frequencies u p to 40 kHz in hard switching, >200 kHz in resonant mode www.DataSheet4U.com ⠀˘ New IGBT design provides tighter par ameter distribution and higher efficien cy than previous generations • IGBT c o-packaged with HEXFREDT.
Manufacture

International Rectifier

Datasheet
Download G4PH50UD Datasheet


International Rectifier G4PH50UD

G4PH50UD; M ultrafast, ultra-soft-recovery anti-pa rallel diodes for use in bridge configu rations • Industry standard TO-247AC package C UltraFast CoPack IGBT VCES = 1200V G E VCE(on) typ. = 2.78V @VGE = 15V, IC = 24A n-cha nn el Benefits • Higher switching frequency capabili ty than competitive IGBTs • Highest e fficiency available • HEXFRED diodes optimized for performance .


International Rectifier G4PH50UD

with IGBT's . Minimized recovery charact eristics require less/no snubbing TO-24 7AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ T C = 25°C PD @ TC = 100°C TJ TSTG Coll ector-to-Emitter Breakdown Voltage Cont inuous Collector Current Continuous Col lector Current Pulsed Collector Current Q Clamped Inductive Lo.


International Rectifier G4PH50UD

ad Current R Diode Continuous Forward Cu rrent Diode Maximum Forward Current Gat e-to-Emitter Voltage Maximum Power Diss ipation Maximum Power Dissipation Opera ting Junction and Storage Temperature R ange Soldering Temperature, for 10 seco nds Mounting torque, 6-32 or M3 screw. Max. 1200 45 24 180 180 16 180 Âą 20 2 00 78 -55 to + 150 300 (0.063 in. (1.6m m) from case ) 10 l.

Part

G4PH50UD

Description

IRG4PH50UD



Feature


PD 91573A IRG4PH50UD INSULATED GATE BIP OLAR TRANSISTOR WITH ULTRAFAST SOFT REC OVERY DIODE Features • UltraFast: Opt imized for high operating frequencies u p to 40 kHz in hard switching, >200 kHz in resonant mode www.DataSheet4U.com ⠀˘ New IGBT design provides tighter par ameter distribution and higher efficien cy than previous generations • IGBT c o-packaged with HEXFREDT.
Manufacture

International Rectifier

Datasheet
Download G4PH50UD Datasheet




 G4PH50UD
PD 91573A
IRG4PH50UD
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
www.DataSheet4U.com >200 kHz in resonant mode
• New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
G
E
n-channel
VCES = 1200V
VCE(on) typ. = 2.78V
@VGE = 15V, IC = 24A
bridge configurations
• Industry standard TO-247AC package
Benefits
• Higher switching frequency capability than
competitive IGBTs
• Highest efficiency available
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
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Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
TO-247AC
Max.
1200
45
24
180
180
16
180
Âą 20
200
78
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.64
0.83
–––
40
–––
Units
°C/W
g (oz)
1
7/7/2000




 G4PH50UD
IRG4PH50UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
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V(BR)CES
∆V(BR)CES/∆TJ
VCE(on)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
VFM
IGES
Collector-to-Emitter Breakdown VoltageS 1200 — — V
Temperature Coeff. of Breakdown Voltage — 1.20 — V/°C
Collector-to-Emitter Saturation Voltage — 2.56 3.5
— 2.78 3.7
— 3.20 — V
— 2.54 —
Gate Threshold Voltage
3.0 — 6.0
Temperature Coeff. of Threshold Voltage — -13 — mV/°C
Forward Transconductance T
23 35 — S
Zero Gate Voltage Collector Current
— — 250 µA
— — 6500
Diode Forward Voltage Drop
— 2.5 3.5 V
— 2.1 3.0
Gate-to-Emitter Leakage Current
— — ±100 nA
VGE = 0V, IC = 250ÂľA
VGE = 0V, IC = 1.0mA
IC = 20A
VGE = 15V
IC = 24A
IC = 45A
See Fig. 2, 5
IC = 24A, TJ = 150°C
VCE = VGE, IC = 250ÂľA
VCE = VGE, IC = 250ÂľA
VCE = 100V, IC = 24A
VGE = 0V, VCE = 1200V
VGE = 0V, VCE = 1200V, TJ = 150°C
IC = 16A
See Fig. 13
IC = 16A, TJ = 150°C
VGE = Âą20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
2
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
— 160 250
IC = 24A
— 27 40 nC VCC = 400V
See Fig. 8
— 53 80
VGE = 15V
— 47 —
TJ = 25°C
— 24 — ns IC = 24A, VCC = 800V
— 110 170
VGE = 15V, RG = 5.0Ω
— 180 260
Energy losses include "tail" and
— 2.10 —
diode reverse recovery.
— 1.50 — mJ See Fig. 9, 10, 18
— 3.60 4.6
— 46 —
— 27 —
— 240 —
— 330 —
TJ = 150°C, See Fig. 11, 18
ns IC = 24A, VCC = 800V
VGE = 15V, RG = 5.0Ω
Energy losses include "tail" and
— 6.38 — mJ diode reverse recovery.
— 13 — nH Measured 5mm from package
— 3600 —
— 160 —
— 31 —
VGE = 0V
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
— 90 135 ns TJ = 25°C See Fig.
— 164 245
TJ = 125°C 14
IF = 16A
— 5.8 10 A TJ = 25°C See Fig.
— 8.3 15
TJ = 125°C 15
VR = 200V
— 260 675 nC TJ = 25°C See Fig.
— 680 1838
TJ = 125°C
16 di/dt = 200A/Âľs
— 120 — A/µs TJ = 25°C See Fig.
— 76 —
TJ = 125°C 17
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 G4PH50UD
30
25
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20
15
10
5
S qua re wave:
60% of rated
v olta ge
I
Ideal diodes
0
0.1
IRG4PH50UD
For both:
D uty cycle: 50%
TJ = 125°C
Tsink = 90°C
G ate drive as specified
P o w e r D is s ip a tio n = 40W
1 10
f, Frequency (KHz)
100
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
1000
100
TJ = 150 oC
10
TJ = 25 oC
VGE = 15V
20Âľs PULSE WIDTH
1
1 10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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100
TJ = 150 oC
10
TJ = 25 oC
VCC = 50V
5Âľs PULSE WIDTH
1
5 6 7 8 9 10 11 12
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3



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