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Silicon Transistor. 2SD415 Datasheet

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Silicon Transistor. 2SD415 Datasheet






2SD415 Transistor. Datasheet pdf. Equivalent




2SD415 Transistor. Datasheet pdf. Equivalent





Part

2SD415

Description

PNP/NPN Silicon Transistor



Feature


DATA SHEET SILICON POWER TRANSISTOR 2S B548, 549/2SD414, 415 PNP/NPN SILICON E PITAXIAL TRANSISTOR FOR LOW-FREQUENCY P OWER AMPLIFIERS FEATURES • Ideal for audio amplifier drivers with 30 W to 5 0 W output • High voltage • Availab le for small mount spaces due to small and thin package • Easy to be attache d to radiators PACKAGE DRAWING (UNIT: mm) ABSOLUTE MAXIMUM RATI.
Manufacture

NEC

Datasheet
Download 2SD415 Datasheet


NEC 2SD415

2SD415; NGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter volta ge Emitter to base voltage Collector cu rrent Collector current Total power dis sipation Total power dissipation Juncti on temperature Storage temperature Symb ol VCBO VCEO VEBO IC(DC) IC(pulse)* PT (Ta = 25°C) PT (Tc = 25°C) Tj Tstg 2S B548/ 2SD414 −80/80 2SB549/ 2SD415 100/100 Unit V V V A A W.


NEC 2SD415

W °C °C www.DataSheet.co.kr −100/1 20 −5.0/5.0 −0.8/0.8 −1.5/1.5 1.0 10 150 −55 to +150 Electrode Connec tion * PW ≤ 10 ms, duty cycle ≤ 50 % ELECTRICAL CHARACTERISTICS (Ta = 25 C) Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain Collector saturation vo ltage Base saturation voltage Gain band width product Collector capacitance.


NEC 2SD415

Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE (sat) fT Cob Conditions VCB = −80/80 V, IE = 0 VEB = −3.0/3.0 V, IC = 0 VC E = −5.0/5.0 V, IC = −2.0/2.0 mA* V CE = −5.0/5.0 V, IC = −200/200 mA* IC = −500/500 mA, IB = −50/50 mA* I C = −500/500 mA, IB = −50/50 mA* VC E = −5.0/5.0 V, IC = −100/100 mA VC B = −10/10 V, IE = 0, f = 1.0 MHz 20 40 90 −0.4/0.3 −0.9/0.9 70/45 25/15 320 −2.0.

Part

2SD415

Description

PNP/NPN Silicon Transistor



Feature


DATA SHEET SILICON POWER TRANSISTOR 2S B548, 549/2SD414, 415 PNP/NPN SILICON E PITAXIAL TRANSISTOR FOR LOW-FREQUENCY P OWER AMPLIFIERS FEATURES • Ideal for audio amplifier drivers with 30 W to 5 0 W output • High voltage • Availab le for small mount spaces due to small and thin package • Easy to be attache d to radiators PACKAGE DRAWING (UNIT: mm) ABSOLUTE MAXIMUM RATI.
Manufacture

NEC

Datasheet
Download 2SD415 Datasheet




 2SD415
DATA SHEET
SILICON POWER TRANSISTOR
2SB548, 549/2SD414, 415
PNP/NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS
FEATURES
• Ideal for audio amplifier drivers with 30 W to 50 W output
• High voltage
• Available for small mount spaces due to small and thin package
• Easy to be attached to radiators
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current
Total power dissipation
Total power dissipation
Symbol
2SB548/ 2SB549/
2SD414 2SD415
VCBO
100/120
VCEO
80/80 100/100
VEBO
5.0/5.0
IC(DC)
0.8/0.8
IC(pulse)*
1.5/1.5
PT (Ta = 25°C)
1.0
PT (Tc = 25°C)
10
Junction temperature
Storage temperature
Tj 150
Tstg 55 to +150
* PW 10 ms, duty cycle 50%
Unit
V
V
V
A
A
W
W
www.DataSheet.co.kr
°C
°C
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Gain bandwidth product
Collector capacitance
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
VCB = 80/80 V, IE = 0
VEB = 3.0/3.0 V, IC = 0
VCE = 5.0/5.0 V, IC = 2.0/2.0 mA*
VCE = 5.0/5.0 V, IC = 200/200 mA*
IC = 500/500 mA, IB = 50/50 mA*
IC = 500/500 mA, IB = 50/50 mA*
VCE = 5.0/5.0 V, IC = 100/100 mA
VCB = 10/10 V, IE = 0, f = 1.0 MHz
* Pulse test PW 350 µs, duty cycle 2%
hFE2 CLASSIFICATION
Marking
hFE2
S
40 to 80
R
60 to 120
Q
100 to 200
P
160 to 320
MIN.
20
40
TYP.
MAX.
1.0/1.0
1.0/1.0
90
0.4/0.3
0.9/0.9
70/45
25/15
320
2.0/2.0
1.5/1.5
Unit
µA
µA
V
V
MHz
pF
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16141EJ2V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928
Datasheet pdf - http://www.DataSheet4U.net/




 2SD415
TYPICAL CHARACTERISTICS (Ta = 25°C)
Note
Note
1. 1 mm aluminum board
for heatsink
2. No insulating board
3. Silicon grease coating
4. Horizontal level
With infinite heatsink
Without te heatsink
Temperature T (°C)
2SB548, 549/2SD414, 415
Case Temperature Tc (°C)
Note
1. Tc = 25 °C
2. Derate the dissipation limited
area by case temperature and
duty cycle.
3. S/b limited area is a single
pulse. Derate this area by case
temperature.
Collector to Emitter Voltage VCE (V)
www.DataSheet.co.kr
Note
1. Tc = 25 °C
2. Derate the dissipation limited
area by case temperature and
duty cycle.
3. S/b limited area is a single
pulse. Derate this area by
Collector to Emitter Voltage VCE (V)
Pulse Width PW (ms)
Collector to Emitter Voltage VCE (V)
2 Data Sheet D16141EJ2V0DS
Datasheet pdf - http://www.DataSheet4U.net/




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3
Datasheet pdf - http://www.DataSheet4U.net/



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