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2SK3662 Datasheet, Equivalent, N-Channel MOSFET.

N-Channel MOSFET

N-Channel MOSFET

 

 

 

Part 2SK3662
Description N-Channel MOSFET
Feature 2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSII) 2SK3662 Switching Regulator, DC−DC Co nverter, Motor Drive Applications

• Low drain-source ON resistance: RDS (ON) = 9.
4 mΩ (typ.
) High forward transfer admittance: |Yfs| = 55 S (typ .
) Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) Unit: mm
• Enhanc ement mode : Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1 mA) www.
DataSheet4U.
com A bsolute Maximum Ratings (Ta = 25°C) Ch aracteristics Drain-source voltage Drai n-gate voltage (RGS = 20 kΩ) Gate-sour ce voltage Drain current DC (Note 1) Sy mbol VDSS VDGR VGSS ID IDP PD .
Manufacture Toshiba Semiconductor
Datasheet
Download 2SK3662 Datasheet
Part 2SK3662
Description N-Channel MOSFET
Feature 2SK3662 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSII) 2SK3662 Switching Regulator, DC−DC Co nverter, Motor Drive Applications

• Low drain-source ON resistance: RDS (ON) = 9.
4 mΩ (typ.
) High forward transfer admittance: |Yfs| = 55 S (typ .
) Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) Unit: mm
• Enhanc ement mode : Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1 mA) www.
DataSheet4U.
com A bsolute Maximum Ratings (Ta = 25°C) Ch aracteristics Drain-source voltage Drai n-gate voltage (RGS = 20 kΩ) Gate-sour ce voltage Drain current DC (Note 1) Sy mbol VDSS VDGR VGSS ID IDP PD .
Manufacture Toshiba Semiconductor
Datasheet
Download 2SK3662 Datasheet

2SK3662

2SK3662
2SK3662

2SK3662

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