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2SK3663 Datasheet, Equivalent, EFFECT TRANSISTOR.N-CHANNEL MOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FIELD EFFECT TRANSISTOR |
| Part | 2SK3663 |
|---|---|
| Description | N-CHANNEL MOS FIELD EFFECT TRANSISTOR |
| Feature | DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3663
N-CHANNEL MOS FIELD EFFECT TRA NSISTOR FOR SWITCHING
DESCRIPTION
The 2SK3663 is a switching device which can be driven directly by a 2. 5 V power so urce. www. DataSheet4U. com The 2SK3663 f eatures a low on-state resistance and e xcellent switching characteristics, and is suitable for applications such as p ower switch of portable machine and so on. PACKAGE DRAWING (Unit: mm) FEATUR ES • 2. 5 V drive available • Low on -state resistance RDS(on)1 = 0. 57 Ω M AX. (VGS = 4. 5 V, ID = 0. 30 A) RDS(on)2 = 0. 60 Ω MAX. (VGS = 4. 0 V, ID = 0. 3 0 A) RDS(on)3 = 0. 88 Ω . |
| Manufacture | NEC |
| Datasheet |
| Part | 2SK3663 |
|---|---|
| Description | N-CHANNEL MOS FIELD EFFECT TRANSISTOR |
| Feature | DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3663
N-CHANNEL MOS FIELD EFFECT TRA NSISTOR FOR SWITCHING
DESCRIPTION
The 2SK3663 is a switching device which can be driven directly by a 2. 5 V power so urce. www. DataSheet4U. com The 2SK3663 f eatures a low on-state resistance and e xcellent switching characteristics, and is suitable for applications such as p ower switch of portable machine and so on. PACKAGE DRAWING (Unit: mm) FEATUR ES • 2. 5 V drive available • Low on -state resistance RDS(on)1 = 0. 57 Ω M AX. (VGS = 4. 5 V, ID = 0. 30 A) RDS(on)2 = 0. 60 Ω MAX. (VGS = 4. 0 V, ID = 0. 3 0 A) RDS(on)3 = 0. 88 Ω . |
| Manufacture | NEC |
| Datasheet |
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