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2SK3666 Datasheet, Equivalent, Silicon FET.N-Channel Junction Silicon FET N-Channel Junction Silicon FET |
| Part | 2SK3666 |
|---|---|
| Description | N-Channel Junction Silicon FET |
| Feature | Ordering number : EN8158A
2SK3666
2SK3 666
Applicatins www. DataSheet4U. com • N-Channel Junction Silicon FET Low-F requency General-Purpose Amplifier, Imp edance Converter Applications Low-freq uency general-purpose amplifier, impeda nce conversion, infrared sensor applica tions. Features • • Small IGSS. S mall Ciss Specifications Absolute Maxi mum Ratings at Ta=25°C Parameter Drain -to-Source Voltage Gate-to-Drain Voltag e Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions Ratings 30 -- 30 10 10 200 150 --55 . |
| Manufacture | Sanyo Semicon Device |
| Datasheet |
| Part | 2SK3666 |
|---|---|
| Description | N-Channel Junction Silicon FET |
| Feature | Ordering number : EN8158A
2SK3666
2SK3 666
Applicatins www. DataSheet4U. com • N-Channel Junction Silicon FET Low-F requency General-Purpose Amplifier, Imp edance Converter Applications Low-freq uency general-purpose amplifier, impeda nce conversion, infrared sensor applica tions. Features • • Small IGSS. S mall Ciss Specifications Absolute Maxi mum Ratings at Ta=25°C Parameter Drain -to-Source Voltage Gate-to-Drain Voltag e Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions Ratings 30 -- 30 10 10 200 150 --55 . |
| Manufacture | Sanyo Semicon Device |
| Datasheet |
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