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1SS404 Datasheet, Equivalent, Barrier Type.

Silicon Epitaxial Schottky Barrier Type

Silicon Epitaxial Schottky Barrier Type

 

 

 

Part 1SS404
Description Silicon Epitaxial Schottky Barrier Type
Feature 1SS404 TOSHIBA Diode Silicon Epitaxial S chottky Barrier Type 1SS404 High Speed Switching Applications www.
datasheet4u .
com Unit: mm



• Two-pi n small packages are suitable for highe r mounting densities Low forward voltag e : VF (3) = 0.
38 V (typ.
) Low reverse current: IR = 50 μA (max) Small total capacitance: CT = 46 pF (typ.
) Absolut e Maximum Ratings (Ta = 25°C) Characte ristics Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Power d issipation Junction temperature Storage temperature range Operating temperatur e range Symbol VRM VR IF .
Manufacture Toshiba Semiconductor
Datasheet
Download 1SS404 Datasheet
Part 1SS404
Description Silicon Epitaxial Schottky Barrier Type
Feature 1SS404 TOSHIBA Diode Silicon Epitaxial S chottky Barrier Type 1SS404 High Speed Switching Applications www.
datasheet4u .
com Unit: mm



• Two-pi n small packages are suitable for highe r mounting densities Low forward voltag e : VF (3) = 0.
38 V (typ.
) Low reverse current: IR = 50 μA (max) Small total capacitance: CT = 46 pF (typ.
) Absolut e Maximum Ratings (Ta = 25°C) Characte ristics Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Power d issipation Junction temperature Storage temperature range Operating temperatur e range Symbol VRM VR IF .
Manufacture Toshiba Semiconductor
Datasheet
Download 1SS404 Datasheet

1SS404

1SS404
1SS404

1SS404

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