| DatasheetsPDF.com |
BTB1412J3 Datasheet, Equivalent, Planar Transistor.Low Vcesat PNP Epitaxial Planar Transistor Low Vcesat PNP Epitaxial Planar Transistor |
　
　
　
| Part | BTB1412J3 |
|---|---|
| Description | Low Vcesat PNP Epitaxial Planar Transistor |
| Feature | www. DataSheet4U. com CYStech Electronics Corp. Spec. No. : C816J3 Issued Date : 2003. 05. 15 Revised Date : 2004. 07. 02 Page No. : 1/4 Low Vcesat PNP Epitaxia l Planar Transistor BTB1412J3 Features • Low VCE(sat), VCE(sat)=-0. 6 V (typ ical), at IC / IB = -4A / -0. 1A • Exc ellent DC current gain characteristics • Complementary to BTD2118J3 Symbol BTB1412J3 Outline TO-252 B：Base Cï¼ šCollector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter C ollector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Tem perature Storage Temperatur . |
| Manufacture | Cystech Electonics |
| Datasheet |
| Part | BTB1412J3 |
|---|---|
| Description | Low Vcesat PNP Epitaxial Planar Transistor |
| Feature | www. DataSheet4U. com CYStech Electronics Corp. Spec. No. : C816J3 Issued Date : 2003. 05. 15 Revised Date : 2004. 07. 02 Page No. : 1/4 Low Vcesat PNP Epitaxia l Planar Transistor BTB1412J3 Features • Low VCE(sat), VCE(sat)=-0. 6 V (typ ical), at IC / IB = -4A / -0. 1A • Exc ellent DC current gain characteristics • Complementary to BTD2118J3 Symbol BTB1412J3 Outline TO-252 B：Base Cï¼ šCollector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter C ollector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Tem perature Storage Temperatur . |
| Manufacture | Cystech Electonics |
| Datasheet |
　
　
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |