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Rectifier Diode. 1N5553 Datasheet

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Rectifier Diode. 1N5553 Datasheet






1N5553 Diode. Datasheet pdf. Equivalent




1N5553 Diode. Datasheet pdf. Equivalent





Part

1N5553

Description

(1N5550 - 1N5554) Axial Leaded Hermetically Sealed Standard Recovery Rectifier Diode



Feature


www.DataSheet4U.com POWER DISCRETES Des cription Quick reference data VR = 200 - 1000V IF = 5.0A trr = 2µS VF = 1.0V 1N5550 THRU 1N5554 3SM2 THRU 3SM0 Axia l Leaded Hermetically Sealed Standard R ecovery Rectifier Diode Features ‹ ‹ ‹ ‹ ‹ Low reverse leakage current He rmetically sealed in fused metal oxide Good thermal shock resistance Low forwa rd voltage drop Avalanch.
Manufacture

Semtech Corporation

Datasheet
Download 1N5553 Datasheet


Semtech Corporation 1N5553

1N5553; e capability These products are qualifi ed to MIL-PRF-19500/420. They can be su pplied fully released as JAN, JANTX, an d JANTXV versions. Absolute Maximum Ra tings Electrical specifications @ TA = 25°C unless otherwise specified. Symb ol Working Reverse Voltage Average Forw ard Current @ 55°C in free air, lead l ength 0.375" Repetitive Surge Current @ 55°C in free air, l.


Semtech Corporation 1N5553

ead length 0.375" Non-Repetitive Surge C urrent (tp = 8.3mS @ VR & TJMAX) (tp = 8.3mS, @ VR & 25°C) Storage Temperatur e Range VRWM IF(AV) 1N 5550 3SM2 200 1N 5551 3SM4 400 1N 5552 3SM6 600 5.0 1N 5553 3SM8 800 1N 5554 3SM0 1000 U nits V A IFRM 25 A IFSM TSTG 100 1 50 -65 to +175 A °C Revision: Octobe r 4, 2007 1 www.semtech.com 1N5550 T HRU 1N5554 3SM2 THRU.


Semtech Corporation 1N5553

3SM0 www.DataSheet4U.com POWER DISCRET ES Electrical Specifications Symbol Ave rage Forward Current (sine wave) - max. TA = 55°C - max. L = 3/8"; TL = 55°C I2t for fusing (t = 8.3mS) max Forward Voltage Drop max. @ IF = 3.0A, Tj = 25 °C Reverse Current max. @ VRWM, Tj = 2 5°C @ VRWM, Tj = 125°C Reverse Recove ry Time max. 0.5A IF to 1.0A IRM recove rs to 0.25A IRM(REC) Ju.

Part

1N5553

Description

(1N5550 - 1N5554) Axial Leaded Hermetically Sealed Standard Recovery Rectifier Diode



Feature


www.DataSheet4U.com POWER DISCRETES Des cription Quick reference data VR = 200 - 1000V IF = 5.0A trr = 2µS VF = 1.0V 1N5550 THRU 1N5554 3SM2 THRU 3SM0 Axia l Leaded Hermetically Sealed Standard R ecovery Rectifier Diode Features ‹ ‹ ‹ ‹ ‹ Low reverse leakage current He rmetically sealed in fused metal oxide Good thermal shock resistance Low forwa rd voltage drop Avalanch.
Manufacture

Semtech Corporation

Datasheet
Download 1N5553 Datasheet




 1N5553
www.DataSheet4U.com
POWER DISCRETES
Description
Quick reference data
VIFR
=
=
200 -
5.0A
1000V
trr = 2µS
VF = 1.0V
1N5550 THRU 1N5554
3SM2 THRU 3SM0
Axial Leaded Hermetically Sealed
Standard Recovery Rectifier Diode
Features
‹ Low reverse leakage current
‹ Hermetically sealed in fused metal oxide
‹ Good thermal shock resistance
‹ Low forward voltage drop
‹ Avalanche capability
These products are qualified to MIL-PRF-19500/420.
They can be supplied fully released as JAN, JANTX, and
JANTXV versions.
Absolute Maximum Ratings
Electrical specifications @ TA = 25°C unless otherwise specified.
Symbol
1N5550
3SM2
Working Reverse Voltage
Average Forward Current
@ 55°C in free air, lead length
0.375"
VRWM
IF(AV)
200
Repetitive Surge Current
@ 55°C in free air, lead length
0.375"
IFRM
Non-Repetitive Surge Current
(tp = 8.3mS @ VR & TJMAX)
(tp = 8.3mS, @ VR & 25°C)
Storage Temperature Range
IFSM
TSTG
1N5551
3SM4
400
1N5552
3SM6
600
1N5553
3SM8
800
1N5554
3SM0
1000
5.0
25
100
150
-65 to +175
Units
V
A
A
A
°C
Revision: October 4, 2007
1
www.semtech.com




 1N5553
wwPw.ODaWtaSEheRet4DU.cIoSmCRETES
Electrical Specifications
1N5550 THRU 1N5554
3SM2 THRU 3SM0
Average Forward Current (sine wave)
- max. TA = 55°C
- max. L = 3/8"; TL = 55°C
I2t for fusing (t = 8.3mS) max
Forward Voltage Drop max.
@ IF = 3.0A, Tj = 25°C
Reverse Current max.
@ VRWM, Tj = 25°C
@ VRWM, Tj = 125°C
Reverse Recovery Time max.
0.5A IF to 1.0A IRM recovers to 0.25A IRM(REC)
Junction Capacitance typ.
@ VR = 5V, f = 1MHz
Thermal Characteristics
Symbol 1N5550 1N5551 1N5552 1N5553
3SM2 3SM4 3SM6 3SM8
IF(AV)
IF(AV)
I2t
3.0
5.0
42
VF 1.0
IR 1.0
IR 60
trr 2.0
Cj 92
1N5554
3SM0
Units
A
A2S
V
µA
µS
pF
Thermal Resistance-Junction to Lead
Lead length = 0.375"
Lead length = 0.0"
Thermal Resistance-Junction to
Ambient on 0.06" thick pcb. 1 oz.
copper
Typical Characteristics
Symbol
1N5550 1N5551 1N5552 1N5553
3SM2 3SM4 3SM6 3SM8
1N5554
3SM0
Units
R
Rθ
θ
JL
JL
R
θ
JA
22 °C/W
4
47 °C/W
2007 Semtech Corp.
Fig 1. Typical junction capacitance as a function of reverse voltage.
2
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 1N5553
wwPw.ODaWtaSEheRet4DU.cIoSmCRETES
Typical Characteristics
1N5550 THRU 1N5554
3SM2 THRU 3SM0
Fig 2. Forward voltage drop as a function of forward current
Fig 3. Maximum power versus lead temperature
Fig 4. Forward power dissipation as a function of forward
current, for sinusoidal operation.
Fig 5. Maximum ratings for capacitive loads.
2007 Semtech Corp.
3
www.semtech.com






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