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BLF6G20-180RN Datasheet, Equivalent, LDMOS Transistor.

Power LDMOS Transistor

Power LDMOS Transistor

 

 

 

Part BLF6G20-180RN
Description Power LDMOS Transistor
Feature www.
DataSheet4U.
com BLF6G20-180RN; BLF6 G20LS-180RN Power LDMOS transistor Rev.
01 — 17 November 2008 Product data s heet 1.
Product profile 1.
1 General d escription 180 W LDMOS power transistor for base station applications at frequ encies from 1800 MHz to 2000 MHz.
Table 1.
Typical performance Typical RF perf ormance at Tcase = 25 °C in a class-AB production test circuit.
Mode of opera tion 2-carrier WCDMA [1] f (MHz) 1930 to 1990 VDS (V) 30 PL(AV) (W) 40 Gp (dB) 17.
2 ηD (%) 27 IMD3 (dBc) −38 [1] ACPR (dBc) −41[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.
01 % probability o .
Manufacture NXP
Datasheet
Download BLF6G20-180RN Datasheet
Part BLF6G20-180RN
Description Power LDMOS Transistor
Feature www.
DataSheet4U.
com BLF6G20-180RN; BLF6 G20LS-180RN Power LDMOS transistor Rev.
01 — 17 November 2008 Product data s heet 1.
Product profile 1.
1 General d escription 180 W LDMOS power transistor for base station applications at frequ encies from 1800 MHz to 2000 MHz.
Table 1.
Typical performance Typical RF perf ormance at Tcase = 25 °C in a class-AB production test circuit.
Mode of opera tion 2-carrier WCDMA [1] f (MHz) 1930 to 1990 VDS (V) 30 PL(AV) (W) 40 Gp (dB) 17.
2 ηD (%) 27 IMD3 (dBc) −38 [1] ACPR (dBc) −41[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.
01 % probability o .
Manufacture NXP
Datasheet
Download BLF6G20-180RN Datasheet

BLF6G20-180RN

BLF6G20-180RN
BLF6G20-180RN

BLF6G20-180RN

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