| DatasheetsPDF.com |
BLF6G20LS-180RN Datasheet, Equivalent, LDMOS Transistor.Power LDMOS Transistor Power LDMOS Transistor |
| Part | BLF6G20LS-180RN |
|---|---|
| Description | Power LDMOS Transistor |
| Feature | www. DataSheet4U. com BLF6G20-180RN; BLF6 G20LS-180RN Power LDMOS transistor Rev. 01 — 17 November 2008 Product data s heet 1. Product profile 1. 1 General d escription 180 W LDMOS power transistor for base station applications at frequ encies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF perf ormance at Tcase = 25 °C in a class-AB production test circuit. Mode of opera tion 2-carrier WCDMA [1] f (MHz) 1930 to 1990 VDS (V) 30 PL(AV) (W) 40 Gp (dB) 17. 2 ηD (%) 27 IMD3 (dBc) −38 [1] ACPR (dBc) −41[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0. 01 % probability o . |
| Manufacture | NXP |
| Datasheet |
| Part | BLF6G20LS-180RN |
|---|---|
| Description | Power LDMOS Transistor |
| Feature | www. DataSheet4U. com BLF6G20-180RN; BLF6 G20LS-180RN Power LDMOS transistor Rev. 01 — 17 November 2008 Product data s heet 1. Product profile 1. 1 General d escription 180 W LDMOS power transistor for base station applications at frequ encies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF perf ormance at Tcase = 25 °C in a class-AB production test circuit. Mode of opera tion 2-carrier WCDMA [1] f (MHz) 1930 to 1990 VDS (V) 30 PL(AV) (W) 40 Gp (dB) 17. 2 ηD (%) 27 IMD3 (dBc) −38 [1] ACPR (dBc) −41[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0. 01 % probability o . |
| Manufacture | NXP |
| Datasheet |
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |