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K3662 Datasheet, Equivalent, 2SK3662.

2SK3662

2SK3662

 

 

 

Part K3662
Description 2SK3662
Feature 2SK3662 www.
DataSheet4U.
com TOSHIBA Fie ld Effect Transistor Silicon N Channel MOS Type (π-MOSII) 2SK3662 Switching Regulator, DC−DC Converter, Motor Dri ve Applications



• Low dra in-source ON resistance: RDS (ON) = 9.
4 mΩ (typ.
) High forward transfer admi ttance: |Yfs| = 55 S (typ.
) Low leakage current: IDSS = 100 μA (max) (VDS = 6 0 V) Enhancement mode : Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1 mA) Unit: mm A bsolute Maximum Ratings (Ta = 25°C) Ch aracteristics Drain-source voltage Drai n-gate voltage (RGS = 20 kΩ) Gate-sour ce voltage Drain current DC (Note 1) Sy mbol VDSS VDGR VGSS ID IDP PD .
Manufacture Toshiba Semiconductor
Datasheet
Download K3662 Datasheet
Part K3662
Description 2SK3662
Feature 2SK3662 www.
DataSheet4U.
com TOSHIBA Fie ld Effect Transistor Silicon N Channel MOS Type (π-MOSII) 2SK3662 Switching Regulator, DC−DC Converter, Motor Dri ve Applications



• Low dra in-source ON resistance: RDS (ON) = 9.
4 mΩ (typ.
) High forward transfer admi ttance: |Yfs| = 55 S (typ.
) Low leakage current: IDSS = 100 μA (max) (VDS = 6 0 V) Enhancement mode : Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1 mA) Unit: mm A bsolute Maximum Ratings (Ta = 25°C) Ch aracteristics Drain-source voltage Drai n-gate voltage (RGS = 20 kΩ) Gate-sour ce voltage Drain current DC (Note 1) Sy mbol VDSS VDGR VGSS ID IDP PD .
Manufacture Toshiba Semiconductor
Datasheet
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