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Epitaxial Transistor. 2SD882PT Datasheet

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Epitaxial Transistor. 2SD882PT Datasheet
















2SD882PT Transistor. Datasheet pdf. Equivalent













Part

2SD882PT

Description

NPN Epitaxial Transistor



Feature


CHENMKO ENTERPRISE CO.,LTD SMALL FLAT NP N Epitaxial Transistor VOLTAGE 30 Volts APPLICATION * Power driver and Dc to D C convertor . 2SD882PT CURRENT 3 Ampe re FEATURE * Small flat package. (SC-6 2/SOT-89) * Low saturation voltage VCE( sat)=0.5V(max.)(IC=2A) * High speed swi tching time: tstg= 1.0uSec (typ.) * PC= 1.5 W (mounted on ceramic substrate). * High saturation .
Manufacture

Chenmko Enterprise

Datasheet
Download 2SD882PT Datasheet


Chenmko Enterprise 2SD882PT

2SD882PT; current capability. 4.6MAX. 1.7MAX. SC- 62/SOT-89 1.6MAX. 0.4+0.05 2.5+0.1 +0 .08 0.45-0.05 +0.08 0.40-0.05 1.50+0.1 +0.08 0.40-0.05 1.50+0.1 * NPN Switchi ng Transistor MARKING * hFE Classifica tion Q: Q82 P: P82 E: 882 1 1 Base 2 3 CIRCUIT 2 Collector ( Heat Sink ) 3 Emitter 0.8MIN. 4.6MAX. CONSTRUCTI ON 1 B 2 C 3 E Dimensions in millim eters SC-62/SOT-8.


Chenmko Enterprise 2SD882PT

9 MAXIMUM RATINGES ( At TA = 25oC unles s otherwise noted ) RATINGS Collector - Base Voltage Collector - Emitter Volta ge Emitter - Base Voltage Collector Cur rent DC Peak Collector Current Peak Bas e Current Total Power Dissipation Stora ge Temperature Junction Temperature Ope rating Ambient Temperature TA ≤ 25OC; Note 1 CONDITION Open Emitter Open Bas e Open Collector SYM.


Chenmko Enterprise 2SD882PT

BOL VCBO VCEO VEBO IC ICM IBM PTOT TSTG TJ TAMB MIN. -55 -55 MAX. 40 30 5 3 3 0 .5 1500 +150 +150 +150 UNITS Volts Volt s Volts Amps Amps Amps mW o C C C o o Note 1. Transistor mounted on cerami c substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2003-8 www.DataSheet4U.com RATING CHA RACTERISTIC CURVES ( 2SD882PT ) CHARACT ERISTICS ( At TA =.





Part

2SD882PT

Description

NPN Epitaxial Transistor



Feature


CHENMKO ENTERPRISE CO.,LTD SMALL FLAT NP N Epitaxial Transistor VOLTAGE 30 Volts APPLICATION * Power driver and Dc to D C convertor . 2SD882PT CURRENT 3 Ampe re FEATURE * Small flat package. (SC-6 2/SOT-89) * Low saturation voltage VCE( sat)=0.5V(max.)(IC=2A) * High speed swi tching time: tstg= 1.0uSec (typ.) * PC= 1.5 W (mounted on ceramic substrate). * High saturation .
Manufacture

Chenmko Enterprise

Datasheet
Download 2SD882PT Datasheet




 2SD882PT
CHENMKO ENTERPRISE CO.,LTD
SMALL FLAT
NPN Epitaxial Transistor
VOLTAGE 30 Volts CURRENT 3 Ampere
2SD882PT
APPLICATION
* Power driver and Dc to DC convertor .
FEATURE
* Small flat package. (SC-62/SOT-89)
* Low saturation voltage VCE(sat)=0.5V(max.)(IC=2A)
* High speed switching time: tstg= 1.0uSec (typ.)
* PC= 1.5 W (mounted on ceramic substrate).
* High saturation current capability.
CONSTRUCTION
* NPN Switching Transistor
MARKING
* hFE Classification Q: Q82
P: P82
E: 882
CIRCUIT
4.6MAX.
1.7MAX.
SC-62/SOT-89
1.6MAX.
0.4+0.05
+0.08
0.45-0.05
+0.08
0.40-0.05
1.50+0.1
+0.08
0.40-0.05
1.50+0.1
12
1 Base
3
2 Collector ( Heat Sink )
3 Emitter
123
BC E
Dimensions in millimeters
SC-62/SOT-89
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
RATINGS
CONDITION
Collector - Base Voltage
Open Emitter
Collector - Emitter Voltage
Open Base
Emitter - Base Voltage
Open Collector
Collector Current DC
Peak Collector Current
Peak Base Current
Total Power Dissipation
TA 25OC; Note 1
Storage Temperature
Junction Temperature
Operating Ambient Temperature
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.
2. Measured at Pulse Width 300 us, Duty Cycle 2%.
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
PTOT
TSTG
TJ
TAMB
MIN.
-
-
-
-
-
-
-
-55
-
-55
MAX.
40
30
5
3
3
0.5
1500
+150
+150
+150
UNITS
Volts
Volts
Volts
Amps
Amps
Amps
mW
oC
oC
oC
2003-8




 2SD882PT
www.DataSheet4U.com
RATING CHARACTERISTIC CURVES ( 2SD882PT )
CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
PARAMETERS
CONDITION
Collector Cut-off Current
IE=0; VCB=30V
Emitter Cut-off Current
IC=0; VEB=3V
DC Current Gain
VCE=2V; Note 1
IC=0.02A
IC=1.0A; Note 2
Collector-Emitter Saturation Voltage
IC=2A; IB=0.2A
Base-Emitter Saturatio Voltage
Collector Capacitance
Transition Frequency
IC=2A; IB=-0.2A
IE=ie=0; VCB=10V;
f=1MHz
IC=0.02A; VCE=20V;
f=100MHz
SYMBOL
ICBO
IEBO
hFE
VCEsat
VBEsat
CC
fT
SWITCHING TIMES ( Between 10% and 90% levels )
PARAMETERS
CONDITION
Turn-on Time
Storage Time
Fall Time
IB2
IB1 IB2 INPUT
20uSec
IB1
IB1=-IB2=0.05A
Duty cycle<1%
OUTPUT
30V
Note :
1. Pulse test: tp 300uSec; δ ≤ 0.02.
2. hFE(2) Classification Q: 100 to 200, P: 160 to 320, E: 250 to 500.
SYMBOL
ton
ts
tf
MIN.
-
-
30
100
-
-
-
-
MIN.
-
-
-
TYPE
-
-
-
160
0.3
1.0
55
100
TYPE
0.1
1.0
0.1
MAX.
1.0
1.0
-
500
0.5
2.0
-
-
UNITS
uA
uA
Volts
Volts
pF
MHz
MAX.
-
-
-
UNITS
uSec
uSec
uSec




 2SD882PT
www.DataSheet4U.com
RATING CHARACTERISTIC CURVES ( 2SD882PT )
Typical Electrical Characteristics
Figure 1. CC - Reverse VCB
3000
1000
100
10
3000
1000
100
10
1
0.1 0.3
1.0
3.0 10
30
100
COLLECTOR-BASE REVERSE BIAS VOLTAGE VCB (V)
1
1
Figure 2. Cutoff Frequency - IC
VCE=5V
10 100
COLLECTOR CURRENT IC (mA)
1000
1000
500
300
100
50
30
10
10
Figure 3. hFE - IC
COMMON EMITTER
VCE=2V
30 100 300
COLLECTOR CURRENT IC (mA)
1000
3000
1.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
Figure 4. PC - TA
(1)
(1) Mounted on ceramic substrate
( 250mm2x0.8t )
(2) No heat sink
(2)
20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE TA (OC)
Figure 5. VCE(sat) - IC
1
COMMON EMITTER
0.5
IC/IB=10
0.3
0.1
0.05
0.03
0.01
10
30 100 300
COLLECTOR CURRENT IC (mA)
1000
3000
10
5
3
1
0.5
0.3
0.1
10
Figure 6. VBE(sat) - IC
COMMON EMITTER
IC/IB=10
30 100 300
COLLECTOR CURRENT IC (mA)
1000
3000




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