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Silicon Transistor. 2SD1651C Datasheet

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Silicon Transistor. 2SD1651C Datasheet
















2SD1651C Transistor. Datasheet pdf. Equivalent













Part

2SD1651C

Description

NPN Triple Diffused Planar Silicon Transistor



Feature


Ordering number : ENN7086 www.DataSheet4 U.com 2SD1651C NPN Triple Diffused Pla nar Silicon Transistor 2SD1651C Color TV Horizontal Deflection Output Applica tions Features • • • • • Pac kage Dimensions unit : mm 2174A [2SD165 1C] 16.0 3.4 5.6 3.1 High speed. High breakdown voltage(VCBO=1500V). High rel iability(Adoption of HVP process). Adop tion of MBIT process. On-chi.
Manufacture

Sanyo Semicon Device

Datasheet
Download 2SD1651C Datasheet


Sanyo Semicon Device 2SD1651C

2SD1651C; p damper diode. 5.0 21.0 4.0 22.0 8. 0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 Specifications Absolute Maximum Rati ngs at Ta=25°C Parameter Collector-to- Base Voltage Collector-to-Emitter Volta ge Emitter-to-Base Voltage Collector Cu rrent Collector Current (Pulse) Collect or Dissipation Junction Temperature Sto rage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg T.


Sanyo Semicon Device 2SD1651C

c=25°C Conditions 1 : Base 2 : Collect or 3 : Emitter SANYO : TO-3PMLH Ratings 1500 800 6 6 15 3.0 60 150 --55 to +15 0 Unit V V V A A W W °C °C 5.45 Ele ctrical Characteristics at Ta=25°C Par ameter Collector Cutoff Current Collect or Cutoff Current Collector Sustain Vol tage Emitter Cutoff Current DC Current Gain Collector-to-Emitter Saturation Vo ltage Base-to-Emitter .


Sanyo Semicon Device 2SD1651C

Saturation Voltage Symbol ICBO ICES VCEO (sus) IEBO hFE1 hFE2 VCE(sat) VBE(sat) Conditions VCB=800V, IE=0 VCE=1500V, RB E=0 IC=100mA, IB=0 VEB=4V, IC=0 VCE=5V, IC=0.5A VCE=5V, IC=3.5A IC=3.15A, IB=0 .63A IC=3.15A, IB=0.63A Ratings min typ max 10 1.0 130 8 3 1.5 Unit µA mA V m A 3.5 800 40 10 5 0.8 2.1 V V Cont inued on next page. Any and all SANYO products described .





Part

2SD1651C

Description

NPN Triple Diffused Planar Silicon Transistor



Feature


Ordering number : ENN7086 www.DataSheet4 U.com 2SD1651C NPN Triple Diffused Pla nar Silicon Transistor 2SD1651C Color TV Horizontal Deflection Output Applica tions Features • • • • • Pac kage Dimensions unit : mm 2174A [2SD165 1C] 16.0 3.4 5.6 3.1 High speed. High breakdown voltage(VCBO=1500V). High rel iability(Adoption of HVP process). Adop tion of MBIT process. On-chi.
Manufacture

Sanyo Semicon Device

Datasheet
Download 2SD1651C Datasheet




 2SD1651C
Ordering number : ENN7086
www.DataSheet4U.com
2SD1651C
NPN Triple Diffused Planar Silicon Transistor
2SD1651C
Color TV Horizontal Deflection
Output Applications
Features
High speed.
High breakdown voltage(VCBO=1500V).
High reliability(Adoption of HVP process).
Adoption of MBIT process.
On-chip damper diode.
Package Dimensions
unit : mm
2174A
[2SD1651C]
16.0 3.4
5.6
3.1
2.8
2.0 2.1
0.7 0.9
Specifications
Absolute Maximum Ratings at Ta=25°C
12 3
5.45
5.45
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
Junction Temperature
Storage Temperature
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Tc=25°C
Conditions
Ratings
1500
800
6
6
15
3.0
60
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Parameter
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO
ICES
VCEO(sus)
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
VCB=800V, IE=0
VCE=1500V, RBE=0
IC=100mA, IB=0
VEB=4V, IC=0
VCE=5V, IC=0.5A
VCE=5V, IC=3.5A
IC=3.15A, IB=0.63A
IC=3.15A, IB=0.63A
min
800
40
10
5
Ratings
typ
max
10
1.0
130
Unit
µA
mA
V
mA
8
3V
1.5 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1501 TS IM TA-3439 No.7086-1/4




 2SD1651C
www.DataSheet4U.com
Continued from preceding page.
Parameter
Fall Time
Diode Forward Voltage
2SD1651C
Symbol
tf
VF
Conditions
IC=2A, IB1=0.4A, IB2=--0.8A
IEC =6A
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
VR
IB1
IB2
RB
50
+
100µF
VBE= --2V
OUTPUT
RL=100
+
470µF
VCC=200V
Ratings
min typ max
Unit
0.3 µs
2V
IC -- VCE
6
1.4A
1.2A
5 1.6A
1.8A
4
1.0A
0.8A
0.6A
0.4A
3
0.2A
2
0.05A
1
0 IB=0
0 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V IT01908
hFE -- IC
5
VCE=5V
3
2
Ta=120°C
10 25°C--40°C
7
5
3
2
1.0
0.1
23
5 7 1.0
23
Collector Current, IC -- A
5 7 10
IT01910
IC -- VBE
7
VCE=5V
6
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V IT01909
VCE(sat) -- IC
5
IC / IB=5
3
2
1.0
7
5
3
2
0.1 Ta= --40°C
7
5 120°C
3 25°C
2
0.01
0.1
23
5 7 1.0
23
Collector Current, IC -- A
5 7 10
IT01911
No.7086-2/4




 2SD1651C
www.DataSheet4U.com
7
5
3
2
1.0
7
5
3
2
SW Time -- IC
tstg
2SD1651C
VCC=200V
IC / IB1=5
IB2 / IB1=2
R load
10
7
5
3
2
1.0
7
5
3
tf
2
SW Time -- IB2
tstg
VCC=200V
IC=2A
IB1=0.4A
R load
0.1
0.1
23
5 7 1.0
23
Collector Current, IC -- A
Forward Bias A S O
5
3
2 ICP=15A
10
7
IC=6A
5
3
2
PC =60W
5 7 10
IT01912
1.0
7
5
3
2
0.1
7
5
3
2
Tc=25°C
Single pulse
0.01
1.0 2 3 5 7 10
2 3 5 7 100 2 3
Collector-to-Emitter Voltage, VCE -- V
3.5 PC -- Ta
5 71000
IT01914
0.1
0.1
5
3
2
23
5 7 1.0
2
Base Current, IB2 -- A
Reverse Bias A S O
35
IT01913
L=500µH
IB2= --1A
10
7
5
3
2
1.0
7
5
3
2 Tc=25°C
0.1 Single pulse
10
2 3 5 7 100
2 3 5 7 1000
Collector-to-Emitter Voltage, VCE -- V
PC -- Tc
70
23
IT01915
3.0 60
2.5
2.0 No heat sink
1.5
50
40
30
1.0 20
0.5
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT01916
10
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT01917
No.7086-3/4




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