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Power FET. EIC0910-12 Datasheet

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Power FET. EIC0910-12 Datasheet
















EIC0910-12 FET. Datasheet pdf. Equivalent













Part

EIC0910-12

Description

9.50-10.50 GHz 12-Watt Internally Matched Power FET



Feature


www.DataSheet4U.com EIC0910-12 UPDATED 03/07/2008 9.50-10.50 GHz 12-Watt Inte rnally Matched Power FET Excelics EIC09 10-12 .827±.010 .669 .120 MIN .120 MIN FEATURES • • • • • • • 9.50–10.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 30% Power Added Efficiency -46 dBc IM3 at PO.
Manufacture

Excelics Semiconductor

Datasheet
Download EIC0910-12 Datasheet


Excelics Semiconductor EIC0910-12

EIC0910-12; = 28.5 dBm SCL 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .125 .508 .008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELE CTRICAL CHARACTERISTICS (Ta = 25°C) SY MBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Outp ut Power at 1dB Compression f = 9.50-10 .50GHz VDS = 10 V, IDSQ ≈ 3200Ma Gain at 1dB Compression f = 9..


Excelics Semiconductor EIC0910-12

50-10.50GHz VDS = 10 V, IDSQ ≈ 3200mA Gain Flatness f = 9.50-10.50GHz VDS = 1 0 V, IDSQ ≈ 3200mA Power Added Effici ency at 1dB Compression VDS = 10 V, IDS Q ≈ 3200mA f = 9.50-10.50GHz Drain Cu rrent at 1dB Compression f = 9.50-10.50 GHz Output 3rd Order Intermodulation Di stortion ∆f=10MHz 2-Tone Test. Pout=2 8.5 dBm S.C.L Vds = 10 V, IDSQ ≈ 65% IDSS f = 10.50GHz Saturated .


Excelics Semiconductor EIC0910-12

Drain Current Pinch-off Voltage Thermal Resistance3 2. S.C.L. = Single Carrier Level. Caution! ESD sensitive device. MIN 39.5 6.0 TYP 40.5 7.0 MAX UNITS dBm dB ±0.6 30 3300 -43 -46 6500 -2.5 2.3 9000 -4.0 2.6 o dB % 4200 mA dB c mA V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 58 mA Note: 1. Tested with 50 Ohm gate resistor. 3. Overall Rth d epends on case moun.





Part

EIC0910-12

Description

9.50-10.50 GHz 12-Watt Internally Matched Power FET



Feature


www.DataSheet4U.com EIC0910-12 UPDATED 03/07/2008 9.50-10.50 GHz 12-Watt Inte rnally Matched Power FET Excelics EIC09 10-12 .827±.010 .669 .120 MIN .120 MIN FEATURES • • • • • • • 9.50–10.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 30% Power Added Efficiency -46 dBc IM3 at PO.
Manufacture

Excelics Semiconductor

Datasheet
Download EIC0910-12 Datasheet




 EIC0910-12
www.DataSheet4U.com
UPDATED 03/07/2008
EIC0910-12
9.50-10.50 GHz 12-Watt Internally Matched Power FET
FEATURES
9.50–10.50GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+40.5 dBm Output Power at 1dB Compression
7.0 dB Power Gain at 1dB Compression
30% Power Added Efficiency
-46 dBc IM3 at PO = 28.5 dBm SCL
100% Tested for DC, RF, and RTH
.827±.010 .669
Excelics
EIC0910-12
.120 MIN YYWW
SN
.024
.421
.120 MIN
.168±.010
.125
.508±.008
.442
ALL DIMENSIONS IN INCHES
.004
.063
.004
.105±.008
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
G1dB
G
PAE
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression
f = 9.50-10.50GHz
VDS = 10 V, IDSQ 3200Ma
Gain at 1dB Compression
f = 9.50-10.50GHz
VDS = 10 V, IDSQ 3200mA
Gain Flatness
f = 9.50-10.50GHz
VDS = 10 V, IDSQ 3200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 3200mA
f = 9.50-10.50GHz
Id1dB
IM3
Drain Current at 1dB Compression
f = 9.50-10.50GHz
Output 3rd Order Intermodulation Distortion
f=10MHz 2-Tone Test. Pout=28.5 dBm S.C.L
Vds = 10 V, IDSQ 65% IDSS
f = 10.50GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
Caution! ESD sensitive device.
MIN
39.5
6.0
TYP
40.5
7.0
30
3300
MAX
±0.6
4200
UNITS
dBm
dB
dB
%
mA
-43 -46
dBc
6500
9000
mA
VP Pinch-off Voltage
VDS = 3 V, IDS = 58 mA
RTH Thermal Resistance3
Note: 1. Tested with 50 Ohm gate resistor. 2. S.C.L. = Single Carrier Level.
-2.5 -4.0
V
2.3 2.6 oC/W
3. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
PARAMETERS
ABSOLUTE1
Vds
Drain-Source Voltage
15
Vgs
Gate-Source Voltage
-5
Igsf Forward Gate Current 130mA
Igsr
Reverse Gate Current
-21mA
Pin
Tch
Tstg
Input Power
Channel Temperature
Storage Temperature
40.0dBm
175 oC
-65 to +175 oC
Pt Total Power Dissipation 57W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS2
10V
-4V
43mA
-7mA
@ 3dB Compression
175 oC
-65 to +175 oC
57W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised March 2008




 EIC0910-12
www.DataSheet4U.com
UPDATED 03/07/2008
EIC0910-12
9.50-10.50 GHz 12-Watt Internally Matched Power FET
DISCLAIMER
EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN.
LIFE SUPPORT POLICY
EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE
SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR,
INC. AS HERE IN:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for
use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be
reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 2
Revised March 2008








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