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Power FET. EIC0910-4 Datasheet

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Power FET. EIC0910-4 Datasheet
















EIC0910-4 FET. Datasheet pdf. Equivalent













Part

EIC0910-4

Description

Internally Matched Power FET



Feature


www.DataSheet4U.com EIC0910-4 UPDATED 0 8/21/2007 9.50-10.50GHz 4-Watt Interna lly-Matched Power FET FEATURES • • • • • • • 9.50–10.50GHz Ba ndwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1d B Compression 7.5 dB Power Gain at 1dB Compression 30% Power Added Efficiency -46 dBc IM3 at PO = 25.5 dBm SCL 100% T ested for DC, RF, and RTH ELECTRI.
Manufacture

Excelics Semiconductor

Datasheet
Download EIC0910-4 Datasheet


Excelics Semiconductor EIC0910-4

EIC0910-4; CAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RT H PARAMETERS/TEST CONDITIONS1 Output Po wer at 1dB Compression f = 9.50-10.50GH z VDS = 10 V, IDSQ ≈ 1100mA Gain at 1 dB Compression f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 110 0mA Power Added Efficiency at 1dB Compr ession VDS = 10 V, IDSQ ≈ 1.


Excelics Semiconductor EIC0910-4

100mA f = 9.50-10.50GHz Drain Current at 1dB Compression f = 9.50-10.50GHz Outp ut 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% ID SS f = 10.50GHz Saturated Drain Current VDS = 3 V, VGS = 0 V Pinch-off Voltage Thermal Resistance 3 Caution! ESD sen sitive device. MIN 35.5 6.5 TYP 36.5 7. 5 ±0.6 30 1200 -43 -46.


Excelics Semiconductor EIC0910-4

2000 -2.5 5.5 2500 -4.0 6.0 o MAX UNI TS dBm dB dB % 1300 mA dBc mA V C/W VDS = 3 V, IDS = 20 mA Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAX IMUM RATING FOR EFE SYMBOLS PARAMETERS ABSOLUTE1 15V -5V 48mA -9.6mA 36dBm 175 C -65C to +175C 25W CONTINUOUS2 10V -4V 14.4mA -2.4mA @ 3.





Part

EIC0910-4

Description

Internally Matched Power FET



Feature


www.DataSheet4U.com EIC0910-4 UPDATED 0 8/21/2007 9.50-10.50GHz 4-Watt Interna lly-Matched Power FET FEATURES • • • • • • • 9.50–10.50GHz Ba ndwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1d B Compression 7.5 dB Power Gain at 1dB Compression 30% Power Added Efficiency -46 dBc IM3 at PO = 25.5 dBm SCL 100% T ested for DC, RF, and RTH ELECTRI.
Manufacture

Excelics Semiconductor

Datasheet
Download EIC0910-4 Datasheet




 EIC0910-4
www.DataSheet4U.com
UPDATED 08/21/2007
EIC0910-4
9.50-10.50GHz 4-Watt Internally-Matched Power FET
FEATURES
9.50–10.50GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+36.5 dBm Output Power at 1dB Compression
7.5 dB Power Gain at 1dB Compression
30% Power Added Efficiency
-46 dBc IM3 at PO = 25.5 dBm SCL
100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
G
PAE
Output Power at 1dB Compression f = 9.50-10.50GHz
VDS = 10 V, IDSQ 1100mA
Gain at 1dB Compression
f = 9.50-10.50GHz
VDS = 10 V, IDSQ 1100mA
Gain Flatness
f = 9.50-10.50GHz
VDS = 10 V, IDSQ 1100mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 1100mA
f = 9.50-10.50GHz
Id1dB
IM3
Drain Current at 1dB Compression f = 9.50-10.50GHz
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L2
VDS = 10 V, IDSQ 65% IDSS
f = 10.50GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
VDS = 3 V, IDS = 20 mA
RTH Thermal Resistance3
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
Caution! ESD sensitive device.
MIN TYP MAX UNITS
35.5 36.5
dBm
6.5 7.5
dB
±0.6
dB
30
1200
1300
%
mA
-43 -46
dBc
2000
-2.5
5.5
2500
-4.0
6.0
mA
V
oC/W
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds Drain-Source Voltage
15V
Vgs Gate-Source Voltage
-5V
Igf Forward Gate Current
48mA
Igr Reverse Gate Current
-9.6mA
Pin Input Power
36dBm
Tch Channel Temperature
175C
Tstg
Storage Temperature
-65C to +175C
Pt Total Power Dissipation
25W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
10V
-4V
14.4mA
-2.4mA
@ 3dB Compression
175C
-65C to +175C
25W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised October 2007




 EIC0910-4
www.DataSheet4U.com
UPDATED 08/21/2007
EIC0910-4
9.50-10.50GHz 4-Watt Internally-Matched Power FET
PERFORMANCE DATA
Typical S-Parameters (T= 25°C, 50system, de-embedded to edge of package)
VDS = 10 V, IDSQ = 1100mA
-3.0
-4.0
-5.0
-10.0
S11 and S22
Swp Max
11GHz
3.0
4.0
5.0
10.0
20
10
0
-10
S21 and S12
DB(|S[2,1]|) *
EIC0910-4
DB(|S[1,2]|) *
EIC0910-4
-0.2
-0.4
S[1,1] *
EIC0910-4
S[2,2] *
EIC0910-4
0.2
0.4
Swp Min
9GHz
-20
-30
9
9.5 10 10.5
Frequency (GHz)
11
FREQ
(GHz)
8.75
9.00
9.25
9.50
9.75
10.00
10.25
10.50
10.75
11.00
11.25
--- S11 ---
MAG
ANG
0.737 -144.630
0.655 -169.280
0.549
164.010
0.444
134.710
0.357
104.470
0.289
72.550
0.235
33.570
0.191
-9.260
0.179
-51.300
0.182
-94.880
0.183 -136.850
--- S21 ---
MAG
ANG
2.269
-6.970
2.531
-33.010
2.683
-59.860
2.765
-86.790
2.755 -112.980
2.727 -137.970
2.687 -163.320
2.581
172.160
2.519
148.030
2.427
123.370
2.332
98.400
--- S12 ---
MAG
ANG
0.057
-49.810
0.071
-78.500
0.085 -105.960
0.100 -134.450
0.106 -161.110
0.113
174.650
0.124
150.320
0.124
124.660
0.127
101.940
0.129
78.470
0.131
53.300
--- S22 ---
MAG
ANG
0.470 -160.060
0.435
168.080
0.411
133.320
0.408
99.190
0.411
66.750
0.431
38.790
0.447
11.850
0.437
-12.860
0.436
-35.330
0.436
-60.600
0.431
-86.500
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 4
Revised October 2007




 EIC0910-4
www.DataSheet4U.com
UPDATED 08/21/2007
EIC0910-4
9.50-10.50GHz 4-Watt Internally-Matched Power FET
Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
30
THIRD-ORDER
INTERCEPT POINT IP3
25
Potentially Unsafe
20 Operating Region
15
Safe Operating
10 Region
5
f1 or f2
IP3 = Pout + IM3/2
Pout
IM3
Pin
IM3
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
(2f2 - f1) or (2f1 - f2)
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Typical Power Data (VDS = 10 V, IDSQ = 1100 mA)
38.00
37.00
36.00
35.00
34.00
33.00
32.00
9.4
P-1dB & G-1dB vs Frequency
11.00
10.00
9.00
8.00
P-1dB (dBm)
G-1dB (dB)
9.6 9.8 10.0 10.2 10.4
Frequency (GHz)
7.00
6.00
10.6
Pin [S.C.L.] (dBm)
Typical IM3 Data (VDS = 10 V, IDSQ 65% IDSS)
IM3 vs Output Power
f1 = 9.50 GHz, f2 = 9.51 GHz
-25
-30
-35
-40
-45
-50
-55
-60 IM3 (dBc)
-65
17 18 19 20 21 22 23 24 25 26 27 28 29 30 31
Pout [S.C.L.] (dBm)
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 3 of 4
Revised October 2007




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