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Power FET. EIC0910-8 Datasheet

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Power FET. EIC0910-8 Datasheet
















EIC0910-8 FET. Datasheet pdf. Equivalent













Part

EIC0910-8

Description

Internally Matched Power FET



Feature


www.DataSheet4U.com EIC0910-8 UPDATED 0 8/21/2007 9.50-10.50GHz 8-Watt Interna lly Matched Power FET FEATURES • • • • • • • 9.50–10.50GHz Ba ndwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1d B Compression 7.5 dB Power Gain at 1dB Compression 30% Power Added Efficiency -43 dBc IM3 at PO = 28.5 dBm SCL 100% T ested for DC, RF, and RTH ELECTRI.
Manufacture

Excelics Semiconductor

Datasheet
Download EIC0910-8 Datasheet


Excelics Semiconductor EIC0910-8

EIC0910-8; CAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RT H PARAMETERS/TEST CONDITIONS1 Output Po wer at 1dB Compression f = 9.5-10.5GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 9.5-10.5GHz VDS = 10 V , IDSQ ≈ 2200mA Gain Flatness f = 9.5 -10.5GHz VDS = 10 V, IDSQ ≈ 2200mA Po wer Added Efficiency at 1dB Compression f = 9.5-10.5GHz VDS = 10 V.


Excelics Semiconductor EIC0910-8

, IDSQ ≈ 2200mA Drain Current at 1dB C ompression f = 9.5-10.5GHz Output 3rd O rder Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C .L2 VDS = 10 V, IDSQ ≈ 65% IDSS f =10 .5GHz Saturated Drain Current VDS = 3 V , VGS = 0 V Pinch-off Voltage VDS = 3 V , IDS = 40 mA 3 Thermal Resistance Cau tion! ESD sensitive device. MIN 38.5 6. 5 TYP 39.5 7.5 ±0.6 30 2.


Excelics Semiconductor EIC0910-8

200 -40 -43 3700 -2.5 2.5 4300 -4.0 3.5 2600 MAX UNITS dBm dB dB % mA dBc mA V o C/W Note: 1. Tested with 100 Ohm gat e resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case m ounting. ABSOLUTE MAXIMUM RATING FOR E FE SYMBOLS PARAMETERS ABSOLUTE1 15V -5V 96mA -19.2mA 39dBm 175C -65C to +175C 43W CONTINUOUS2 10V -4V 28.8mA -4.8mA @ 3dB Compression 1.





Part

EIC0910-8

Description

Internally Matched Power FET



Feature


www.DataSheet4U.com EIC0910-8 UPDATED 0 8/21/2007 9.50-10.50GHz 8-Watt Interna lly Matched Power FET FEATURES • • • • • • • 9.50–10.50GHz Ba ndwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1d B Compression 7.5 dB Power Gain at 1dB Compression 30% Power Added Efficiency -43 dBc IM3 at PO = 28.5 dBm SCL 100% T ested for DC, RF, and RTH ELECTRI.
Manufacture

Excelics Semiconductor

Datasheet
Download EIC0910-8 Datasheet




 EIC0910-8
www.DataSheet4U.com
UPDATED 08/21/2007
EIC0910-8
9.50-10.50GHz 8-Watt Internally Matched Power FET
FEATURES
9.50–10.50GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.5 dBm Output Power at 1dB Compression
7.5 dB Power Gain at 1dB Compression
30% Power Added Efficiency
-43 dBc IM3 at PO = 28.5 dBm SCL
100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
G
PAE
Id1dB
IM3
IDSS
Output Power at 1dB Compression f = 9.5-10.5GHz
VDS = 10 V, IDSQ 2200mA
Gain at 1dB Compression
f = 9.5-10.5GHz
VDS = 10 V, IDSQ 2200mA
Gain Flatness
f = 9.5-10.5GHz
VDS = 10 V, IDSQ 2200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 2200mA
f = 9.5-10.5GHz
Drain Current at 1dB Compression f = 9.5-10.5GHz
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L2
VDS = 10 V, IDSQ 65% IDSS
f =10.5GHz
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 40 mA
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
MIN
38.5
6.5
-40
TYP
39.5
7.5
30
2200
-43
3700
-2.5
2.5
MAX
±0.6
2600
4300
-4.0
3.5
UNITS
dBm
dB
dB
%
mA
dBc
mA
V
oC/W
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds Drain-Source Voltage
15V
10V
Vgs Gate-Source Voltage
-5V
-4V
Igf Forward Gate Current
96mA
28.8mA
Igr Reverse Gate Current -19.2mA
-4.8mA
Pin Input Power
39dBm
@ 3dB Compression
Tch Channel Temperature
175C
175C
Tstg
Storage Temperature
-65C to +175C
-65C to +175C
Pt Total Power Dissipation
43W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
43W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised October 2007




 EIC0910-8
www.DataSheet4U.com
UPDATED 08/21/2007
EIC0910-8
9.50-10.50GHz 8-Watt Internally Matched Power FET
PERFORMANCE DATA
Typical S-Parameters (T= 25°C, 50system, de-embedded to edge of package)
VDS = 10 V, IDSQ 2200mA
-3.0
-4.0
-5.0
-10.0
S11 and S22
Swp Max
11GHz
3.0
4.0
5.0
10.0
20
10
0
-10
S21 and S12
DB(|S[2,1]|) *
EIC0910-8
DB(|S[1,2]|) *
EIC0910-8
-0.2
-0.4
S[1,1] *
EIC0910-8
S[2,2] *
EIC0910-8
0.2
0.4
Swp Min
9GHz
-20
-30
9
9.5 10
Frequency (GHz)
10.5
11
FREQ
(GHz)
8.75
9.00
9.25
9.50
9.75
10.00
10.25
10.50
10.75
11.00
11.25
--- S11 ---
MAG
ANG
0.762
0.698
0.608
0.501
0.335
0.171
0.166
0.292
0.399
0.441
0.419
39.140
18.780
-2.610
-26.030
-56.330
-106.570
156.130
103.200
73.790
49.230
28.540
--- S21 ---
MAG
ANG
2.089
2.205
2.339
2.511
2.652
2.711
2.679
2.561
2.414
2.258
2.158
-121.460
-147.410
-174.210
158.700
129.330
98.910
68.110
38.070
9.130
-19.300
-47.480
--- S12 ---
MAG
ANG
0.075
0.082
0.094
0.106
0.116
0.124
0.123
0.122
0.117
0.113
0.113
-169.770
165.740
139.390
113.610
84.600
54.940
24.260
-5.080
-33.680
-61.740
-91.500
--- S22 ---
MAG
ANG
0.429
0.444
0.464
0.484
0.465
0.411
0.339
0.268
0.235
0.274
0.360
137.700
103.800
72.840
42.960
13.820
-15.940
-48.490
-86.620
-130.070
-168.690
162.890
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 4
Revised October 2007




 EIC0910-8
www.DataSheet4U.com
UPDATED 08/21/2007
EIC0910-8
9.50-10.50GHz 8-Watt Internally Matched Power FET
Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
45
40
THIRD-ORDER
INTERCEPT POINT IP3
35
Potentially Unsafe
30 Operating Region
f1 or f2
IP3 = Pout + IM3/2
25
20
Safe Operating
15 Region
10
5
Pout
IM3
Pin
IM3
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
(2f2 - f1) or (2f1 - f2)
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Pin [S.C.L.] (dBm)
Typical Power Data (VDS = 10 V, IDSQ = 2200 mA)
P-1dB & G-1dB vs Frequency
40 12
39 11
38
P-1dB (dBm)
G-1dB (dB)
10
37 9
36 8
35 7
9.4 9.6 9.8 10.0 10.2 10.4 10.6
Frequency (GHz)
Typical IM3 Data (VDS = 10 V, IDSQ 65% IDSS)
IM3 vs Output Power
f1 = 10.00 GHz, f2 = 10.01 GHz
-15
-20
-25
-30
-35
-40
-45
-50 IM3 (dBc)
-55
-60
23 24 25 26 27 28 29 30 31 32 33 34 35
Pout [S.C.L.] (dBm)
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 3 of 4
Revised October 2007




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