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24N40E Datasheet, Equivalent, MTW24N40E.

MTW24N40E

MTW24N40E

 

 

 

Part 24N40E
Description MTW24N40E
Feature MOTOROLA www.
DataSheet4U.
com Designer's SEMICONDUCTOR TECHNICAL DATA Order th is document by MTW24N40E/D TMOS E-FET .
™ Power Field Effect Transistor TO-2 47 with Isolated Mounting Hole N–Chan nel Enhancement–Mode Silicon Gate Thi s high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without d egrading performance over time.
In addi tion, this advanced TMOS E–FET is des igned to withstand high energy in the a valanche and commutation modes.
The new energy efficient design also offers a drain–to–source diode with a fast r ecovery time.
Designed for h .
Manufacture Motorola
Datasheet
Download 24N40E Datasheet
Part 24N40E
Description MTW24N40E
Feature MOTOROLA www.
DataSheet4U.
com Designer's SEMICONDUCTOR TECHNICAL DATA Order th is document by MTW24N40E/D TMOS E-FET .
™ Power Field Effect Transistor TO-2 47 with Isolated Mounting Hole N–Chan nel Enhancement–Mode Silicon Gate Thi s high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without d egrading performance over time.
In addi tion, this advanced TMOS E–FET is des igned to withstand high energy in the a valanche and commutation modes.
The new energy efficient design also offers a drain–to–source diode with a fast r ecovery time.
Designed for h .
Manufacture Motorola
Datasheet
Download 24N40E Datasheet

24N40E

24N40E
24N40E

24N40E

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