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2SK4115 Datasheet, Equivalent, N-Channel MOSFET.

N-Channel MOSFET

N-Channel MOSFET

 

 

 

Part 2SK4115
Description N-Channel MOSFET
Feature 2SK4115 www.
DataSheet4U.
com TOSHIBA Fie ld Effect Transistor Silicon N-Channel MOS Type (π- MOSⅣ) 2SK4115 Switchin g Regulator Applications


• Low drain-source ON resistance: RDS ( ON) = 1.
6 Ω (typ.
) High forward transf er admittance: ⎪Yfs⎪ = 5.
0 S (typ.
) Low leakage current: IDSS = 100 μA (m ax) (VDS = 720 V) 3.
3max.
2.
0 9.
0 20.
0 0.
3 2.
0 Ф3.
2±0.
2 1.
0 4.
5 Unit: mm 15.
9max.
Enhancement model: Vth = 2.
0~ 4.
0 V (VDS = 10 V, ID = 1 mA) Characte ristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source volt age Drain current DC Pulse (Note 1) (No te 1) Symbol VDSS VDGR VGSS ID IDP .
Manufacture Toshiba Semiconductor
Datasheet
Download 2SK4115 Datasheet
Part 2SK4115
Description N-Channel MOSFET
Feature 2SK4115 www.
DataSheet4U.
com TOSHIBA Fie ld Effect Transistor Silicon N-Channel MOS Type (π- MOSⅣ) 2SK4115 Switchin g Regulator Applications


• Low drain-source ON resistance: RDS ( ON) = 1.
6 Ω (typ.
) High forward transf er admittance: ⎪Yfs⎪ = 5.
0 S (typ.
) Low leakage current: IDSS = 100 μA (m ax) (VDS = 720 V) 3.
3max.
2.
0 9.
0 20.
0 0.
3 2.
0 Ф3.
2±0.
2 1.
0 4.
5 Unit: mm 15.
9max.
Enhancement model: Vth = 2.
0~ 4.
0 V (VDS = 10 V, ID = 1 mA) Characte ristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source volt age Drain current DC Pulse (Note 1) (No te 1) Symbol VDSS VDGR VGSS ID IDP .
Manufacture Toshiba Semiconductor
Datasheet
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2SK4115

2SK4115
2SK4115

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