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AP4501GM. 4501GM Datasheet

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AP4501GM. 4501GM Datasheet
















4501GM AP4501GM. Datasheet pdf. Equivalent













Part

4501GM

Description

AP4501GM



Feature


AP4501GM www.DataSheet4U.com RoHS-compl iant Product N AND P-CHANNEL ENHANCEMEN T MODE POWER MOSFET Advanced Power Ele ctronics Corp. ▼ Simple Drive Require ment D2 D2 N-CH BVDSS RDS(ON) ID G2 S1 S2 G1 30V 28mΩ 7A -30V 50mΩ -5.3A ▼ Low On-resistance ▼ Fast Switchin g Performance D1 D1 P-CH BVDSS RDS(ON ) ID SO-8 Description Advanced Power MOSFETs from APEC provide .
Manufacture

Advanced Power Electronics

Datasheet
Download 4501GM Datasheet


Advanced Power Electronics 4501GM

4501GM; the designer with the best combination o f fast switching, ruggedized device des ign, low on-resistance and cost-effecti veness. D1 D2 The SO-8 package is wi dely preferred for commercial-industria l surface mount applications and suited for low voltage applications such as D C/DC converters. G1 S1 G2 S2 Absolut e Maximum Ratings Symbol VDS VGS ID@TA= 25℃ ID@TA=70℃ IDM .


Advanced Power Electronics 4501GM

PD@TA=25℃ TSTG TJ Parameter Drain-Sour ce Voltage Gate-Source Voltage Continuo us Drain Current Continuous Drain Curre nt Pulsed Drain Current 1 3 3 Rating N -channel 30 ±20 7.0 5.8 20 2 0.016 -55 to 150 -55 to 150 P-channel -30 ±20 - 5.3 -4.7 -20 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Ra nge Operating Junction Tempe.


Advanced Power Electronics 4501GM

rature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.5 Unit /W Data and specifications subject to change without notice 1 200805264 A P4501GM www.DataSheet4U.com N-CH Elect rical Characteristics@Tj=25oC(unless ot herwise specified) Symbol Parameter Dra in-Source Breakdown Voltage Static Drai n-Source On-Resistan.





Part

4501GM

Description

AP4501GM



Feature


AP4501GM www.DataSheet4U.com RoHS-compl iant Product N AND P-CHANNEL ENHANCEMEN T MODE POWER MOSFET Advanced Power Ele ctronics Corp. ▼ Simple Drive Require ment D2 D2 N-CH BVDSS RDS(ON) ID G2 S1 S2 G1 30V 28mΩ 7A -30V 50mΩ -5.3A ▼ Low On-resistance ▼ Fast Switchin g Performance D1 D1 P-CH BVDSS RDS(ON ) ID SO-8 Description Advanced Power MOSFETs from APEC provide .
Manufacture

Advanced Power Electronics

Datasheet
Download 4501GM Datasheet




 4501GM
www.DataSheet4U.com
Advanced Power
Electronics Corp.
AP4501GM
RoHS-compliant Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching Performance
Description
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
30V
28mΩ
7A
-30V
50mΩ
-5.3A
D2
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G1
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel P-channel
30 -30
±20 ±20
7.0 -5.3
5.8 -4.7
20 -20
2
0.016
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Value
62.5
Units
V
V
A
A
A
W
W/
Unit
/W
Data and specifications subject to change without notice
1
200805264




 4501GM
AP4501GM
www.DataSheet4U.com
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=250uA
VGS=10V, ID=7A
VGS=4.5V, ID=5A
VDS=VGS, ID=250uA
VDS=10V, ID=6A
VDS=30V, VGS=0V
VDS=24V ,VGS=0V
VGS=±20V
ID=6A
VDS=24V
VGS=4.5V
VDS=20V
ID=1A
RG=3.3Ω,VGS=10V
RD=20Ω
VGS=0V
VDS=25V
f=1.0MHz
30 - - V
- - 28 mΩ
- - 42 mΩ
1 - 3V
-6-S
- - 1 uA
- - 25 uA
- - ±100 nA
- 8.4 13.5 nC
- 1.4 - nC
- 4.7 - nC
- 5 - ns
- 8 - ns
- 18.5 - ns
- 9 - ns
- 485 770 pF
- 80 - pF
- 75 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=7A, VGS=0V
IS=6A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 19 - ns
- 11 - nC
2




 4501GM
AP4501GM
www.DataSheet4U.com
P-CH Electrical
Characteristics@Tj=25oC(unless
otherwise
specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
VGS=0V, ID=-250uA
VGS=-10V, ID=-5.3A
VGS=-4.5V, ID=-4.2A
-30 -
--
--
-V
50 mΩ
90 mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1 - -3 V
gfs
Forward Transconductance
VDS=-10V, ID=-5A
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
Drain-Source Leakage Current (Tj=70oC)
VDS=-24V, VGS=0V
IGSS Gate-Source Leakage
Qg Total Gate Charge2
VGS=±20V
ID=-5A
Qgs Gate-Source Charge
VDS=-15V
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
td(on)
Turn-on Delay Time2
VDS=-15V
tr Rise Time
ID=-1A
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
tf Fall Time
RD=15Ω
Ciss Input Capacitance
VGS=0V
Coss Output Capacitance
VDS=-25V
Crss
Reverse Transfer Capacitance
f=1.0MHz
-5-S
- - -1 uA
- - -25 uA
- - ±100 nA
- 8 13 nC
- 1.7 - nC
- 4.5 - nC
- 6.7 - ns
- 10 - ns
- 21 - ns
- 10 - ns
- 595 950 pF
- 80 - pF
- 75 - pF
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=-2.6A, VGS=0V
IS=-5A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 18 - ns
- 11 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 /W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3




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