DatasheetsPDF.com

ENHANCEMENT MODE. AP75T10S Datasheet

DatasheetsPDF.com

ENHANCEMENT MODE. AP75T10S Datasheet
















AP75T10S MODE. Datasheet pdf. Equivalent













Part

AP75T10S

Description

N-CHANNEL ENHANCEMENT MODE



Feature


www.DataSheet4U.com AP75T10S/P Advance d Power Electronics Corp. ▼ Simple Dr ive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic G S D N-CHANNEL ENHANCEMENT MODE POWER MOS FET BVDSS RDS(ON) ID 100V 15mΩ 72A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ru ggedized device design, l.
Manufacture

Advanced Power Electronics

Datasheet
Download AP75T10S Datasheet


Advanced Power Electronics AP75T10S

AP75T10S; ow on-resistance and cost-effectiveness. The TO-263 package is universally pref erred for all commercialindustrial surf ace mount applications and suited for l ow voltage applications such as DC/DC c onverters. The through-hole version (AP 75T10P) are available for low-profile a pplications. G D G D S TO-263(S) TO-2 20(P) S Units V V A A A W W/℃ ℃ ℃ Absolute Maximum Ratin.


Advanced Power Electronics AP75T10S

gs Symbol VDS VGS ID@TC=25℃ ID@TC=100 IDM PD@TC=25℃ TSTG TJ Parameter Dr ain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Con tinuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 100 ±20 72 45 260 138 1.11 -55 to 150 -55 to 150 To tal Power Dissipation Linear Derating F actor Storage Temperature Range Operati ng Junction Temperature R.


Advanced Power Electronics AP75T10S

ange Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-c ase Thermal Resistance Junction-ambient Max. Max. Value 0.9 62 Units ℃/W ℃ /W www.DataSheet4U.com AP75T10S/P Ele ctrical Characteristics@T j=25oC(unless otherwise specified) Symbol BVDSS ΔBV DSS/ΔTj Parameter Drain-Source Breakd own Voltage Static Drain-Source On-Resi stance Gate Threshold Vo.





Part

AP75T10S

Description

N-CHANNEL ENHANCEMENT MODE



Feature


www.DataSheet4U.com AP75T10S/P Advance d Power Electronics Corp. ▼ Simple Dr ive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic G S D N-CHANNEL ENHANCEMENT MODE POWER MOS FET BVDSS RDS(ON) ID 100V 15mΩ 72A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ru ggedized device design, l.
Manufacture

Advanced Power Electronics

Datasheet
Download AP75T10S Datasheet




 AP75T10S
www.DataSheet4U.com
AP75T10S/P
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Lower On-resistance
Fast Switching Characteristic
G
D
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
BVDSS
RDS(ON)
ID
100V
15mΩ
72A
G D S TO-263(S)
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP75T10P) are available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
ID@TC=100
IDM
PD@TC=25
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
G
D
S
Rating
100
±20
72
45
260
138
1.11
-55 to 150
-55 to 150
TO-220(P)
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
0.9
62
Units
/W
/W




 AP75T10S
www.DataSheet4U.com
AP75T10S/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
ΔBVDSS/ΔTj
RDS(ON)
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=30A
VGS=4.5V, ID=16A
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=100V, VGS=0V
VDS=80V ,VGS=0V
VGS= ±20V
ID=30A
VDS=80V
VGS=4.5V
VDS=50V
ID=30A
RG=10Ω,VGS=10V
tf Fall Time
RD=1.6Ω
Ciss Input Capacitance
VGS=0V
Coss Output Capacitance
VDS=25V
Crss
Reverse Transfer Capacitance
f=1.0MHz
Rg Gate Resistance
f=1.0MHz
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=30A, VGS=0V
IS=30A, VGS=0V
dI/dt=100A/µs
100 -
-V
- 0.09 - V/
- - 15 mΩ
- - 21 mΩ
1 - 3V
- 52 - S
- - 10 uA
- - 100 uA
- - ±100 nA
- 69 110.4 nC
- 12 - nC
- 39 - nC
- 12 - ns
- 75 - ns
- 220 - ns
- 250 - ns
- 5690 9100 pF
- 540 - pF
- 605 - pF
- 1.1 -
Min. Typ. Max. Units
- - 1.3 V
- 51 - ns
- 74 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.




 AP75T10S
www.DataSheet4U.com
250
T C = 25 o C
200
150
10V
6.0 V
5.0V
4.5V
100
V G =3.0V
50
0
0246
V DS , Drain-to-Source Voltage (V)
8
Fig 1. Typical Output Characteristics
17
I D =16A
16 T C =25 o C
15
14
13
12
11
3 5 7 9 11
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
45
30
T j =150 o C
15
T j =25 o C
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP75T10S/P
120
T C = 150 o C
100
80
60
10V
6.0V
5.0V
4.5V
V G =3.0V
40
20
0
0123456789
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
1.8 I D =30A
V G =10V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
150
1.5
1
0.5
0
-50 0 50 100
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150




Recommended third-party AP75T10S Datasheet







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)