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Silicon Transistor. 2SC4003 Datasheet

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Silicon Transistor. 2SC4003 Datasheet
















2SC4003 Transistor. Datasheet pdf. Equivalent













Part

2SC4003

Description

NPN Triple Diffused Planar Silicon Transistor



Feature


www.DataSheet4U.com SMD Type Transisto rs NPN Triple Diffused Planar Silicon Transistor 2SC4003 TO-252 +0.15 1.50 -0 .15 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0 .7 Features High breakdown voltage +0. 2 9.70 -0.2 +0.15 6.50-0.15 +0.2 5.30- 0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 E xcellent hFE linearity 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1 .50 -0.1 +0.25 2..
Manufacture

KEXIN

Datasheet
Download 2SC4003 Datasheet


KEXIN 2SC4003

2SC4003; 65 -0.1 +0.15 5.55 -0.15 1 Base 2 Coll ector 3 Emitter Absolute Maximum Ratin gs Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Em itter to base voltage Collector current (DC) Collector current (Pulse) Total P ower dissipation Ta = 25 TC = 25 Juncti on temperature Storage temperature Tj T stg Symbol VCBO VCEO VEBO IC Icp PC Rat ing 400 400 5 200 .


KEXIN 2SC4003

400 1 10 150 -55 to +150 Unit V V V mA m A W W 3 .8 0 Adoption of MBIT process www.kexin.com.cn 1 www.DataSheet4U. com SMD Type 2SC4003 Electrical Charac teristics Ta = 25 Parameter collector c utoff current emitter cutoff current DC current Gain Gain-Bandwidth Product C- E Saturation Voltage B-E Saturation Vol tage C-B Breakdown Voltage C-E Breakdow n Voltage E-B Brea.


KEXIN 2SC4003

kdown Voltage Output Capacitance Reverse Transfer Capacitance Turn-ON Time Turn -OFF Time Symbol ICBO IEBO hFE fT VCE(s at) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO cob cre ton toff Testconditons VCB=300 V,IE=0 VEB=4V,IC=0 VCE=10V,IC=50mA VCE= 30V,IC=10mA IC=50mA,IB=5mA IC=50mA,IB=5 mA IC=10ìA,IE=0 IC=1mA,RBE= IE=10ìA,I C=0 VCB=30V,f=1MHz VCB=30V,f=1MHz see s pecified Test Circui.





Part

2SC4003

Description

NPN Triple Diffused Planar Silicon Transistor



Feature


www.DataSheet4U.com SMD Type Transisto rs NPN Triple Diffused Planar Silicon Transistor 2SC4003 TO-252 +0.15 1.50 -0 .15 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0 .7 Features High breakdown voltage +0. 2 9.70 -0.2 +0.15 6.50-0.15 +0.2 5.30- 0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 E xcellent hFE linearity 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1 .50 -0.1 +0.25 2..
Manufacture

KEXIN

Datasheet
Download 2SC4003 Datasheet




 2SC4003
www.DataSheet4U.com
SMD Type
Transistors
NPN Triple Diffused Planar Silicon Transistor
2SC4003
Features
High breakdown voltage
Adoption of MBIT process
Excellent hFE linearity
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60+0.15
-0.15
0.60+0.1
-0.1
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Total Power dissipation Ta = 25
TC = 25
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Icp
PC
Tj
Tstg
Rating
400
400
5
200
400
1
10
150
-55 to +150
Unit
V
V
V
mA
mA
W
W
www.kexin.com.cn 1




 2SC4003
www.DataSheet4U.com
SMD Type
2SC4003
Electrical Characteristics Ta = 25
Parameter
collector cutoff current
emitter cutoff current
DC current Gain
Gain-Bandwidth Product
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Time
Turn-OFF Time
Symbol
ICBO
IEBO
hFE
fT
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
cob
cre
ton
toff
Testconditons
VCB=300V,IE=0
VEB=4V,IC=0
VCE=10V,IC=50mA
VCE=30V,IC=10mA
IC=50mA,IB=5mA
IC=50mA,IB=5mA
IC=10ìA,IE=0
IC=1mA,RBE=
IE=10ìA,IC=0
VCB=30V,f=1MHz
VCB=30V,f=1MHz
see specified Test Circuit
Switching Time Test Circuit
Transistors
Min Typ Max Unit
0.1 ìA
0.1 ìA
60 200
70 MHz
0.6 V
1.0 V
400 V
400 V
5V
4 pF
3 pF
0.25 ìs
5 ìs
hFE Classification
Marking
D
hFE 60 to 120
E
100 to 200
2 www.kexin.com.cn








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