DatasheetsPDF.com

GATE CMOS. TC58DVG02A1FT00 Datasheet

DatasheetsPDF.com

GATE CMOS. TC58DVG02A1FT00 Datasheet
















TC58DVG02A1FT00 CMOS. Datasheet pdf. Equivalent













Part

TC58DVG02A1FT00

Description

MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS



Feature


TC58DVG02A1FT00 www.DataSheet4U.com TENT ATIVE TOSHIBA MOS DIGITAL INTEGRATED C IRCUIT SILICON GATE CMOS 2 1-GBIT (128 M u 8 BITS) CMOS NAND E PROM DESCRIPTIO N The TC58DVG02A1 is a single 3.3 V 1-G bit (1,107,296,256) bit NAND Electrical ly Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 b ytes u 32 pages u 8192 blocks. The devi ce has a 528-byte .
Manufacture

Toshiba Semiconductor

Datasheet
Download TC58DVG02A1FT00 Datasheet


Toshiba Semiconductor TC58DVG02A1FT00

TC58DVG02A1FT00; static register which allows program and read data to be transferred between th e register and the memory cell array in 528-byte increments. The Erase operati on is implemented in a single block uni t (16 Kbytes  512 bytes: 528 bytes u 3 2 pages). The TC58DVG02A1 is a serial-t ype memory device which utilizes the I/ O pins for both address and data input/ output as well as .


Toshiba Semiconductor TC58DVG02A1FT00

for command inputs. The Erase and Progra m operations are automatically executed making the device most suitable for ap plications such as solid-state file sto rage, voice recording, image file memor y for still cameras and other systems w hich require high-density non-volatile memory data storage. FEATURES x Organ ization Memory cell allay 528 u 256K u 8 Register 528 u 8.


Toshiba Semiconductor TC58DVG02A1FT00

Page size 528 bytes Block size (16K  5 12) bytes x Modes Read, Reset, Auto Pa ge Program, Auto Block Erase, Status Re ad, Multi Block Program, Multi Block Er ase x Mode control Serial input/output Command control x Power supply VCC 2. 7 V to 3.6 V x Program/Erase Cycles 1E 5 cycle (with ECC) x Access time Cell array to register 25 Ps max Serial Read Cycle 50 ns min x.




Part

TC58DVG02A1FT00

Description

MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS



Feature


TC58DVG02A1FT00 www.DataSheet4U.com TENT ATIVE TOSHIBA MOS DIGITAL INTEGRATED C IRCUIT SILICON GATE CMOS 2 1-GBIT (128 M u 8 BITS) CMOS NAND E PROM DESCRIPTIO N The TC58DVG02A1 is a single 3.3 V 1-G bit (1,107,296,256) bit NAND Electrical ly Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 b ytes u 32 pages u 8192 blocks. The devi ce has a 528-byte .
Manufacture

Toshiba Semiconductor

Datasheet
Download TC58DVG02A1FT00 Datasheet




 TC58DVG02A1FT00
TC58DVG02A1FT00
www.DataSheTetE4UN.cToAmTIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1-GBIT (128M u 8 BITS) CMOS NAND E2PROM
DESCRIPTION
The TC58DVG02A1 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable
Read-Only Memory (NAND E2PROM) organized as 528 bytes u 32 pages u 8192 blocks. The device has a 528-byte
static register which allows program and read data to be transferred between the register and the memory cell array
in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes  512 bytes: 528 bytes
u 32 pages).
The TC58DVG02A1 is a serial-type memory device which utilizes the I/O pins for both address and data
input/output as well as for command inputs. The Erase and Program operations are automatically executed making
the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still
cameras and other systems which require high-density non-volatile memory data storage.
FEATURES
x Organization
Memory cell allay 528 u 256K u 8
Register
528 u 8
Page size
528 bytes
Block size
(16K  512) bytes
x Modes
Read, Reset, Auto Page Program,
Auto Block Erase, Status Read,
Multi Block Program, Multi Block Erase
x Mode control
Serial input/output
Command control
x Power supply
VCC 2.7 V to 3.6 V
x Program/Erase Cycles 1E5 cycle (with ECC)
x Access time
Cell array to register 25 Ps max
Serial Read Cycle 50 ns min
x Operating current
Read (50 ns cycle) 10 mA typ.
Program (avg.)
10 mA typ.
Erase (avg.)
10 mA typ.
Standby
50 PA max.
x Package
TSOPI48-P-1220-0.50 (Weight:
g typ.)
PIN ASSIGNMENT (TOP VIEW)
PIN NAMES
NC
NC
NC
NC
NC
GND
RY / BY
RE
CE
NC
NC
VCC
VSS
NC
NC
CLE
ALE
WE
WP
NC
NC
NC
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48 NC
47 NC
46 NC
45 NC
44 I/O8
43 I/O7
42 I/O6
41 I/O5
40 NC
39 NC
38 NC
37 VCC
36 VSS
35 NC
34 NC
33 NC
32 I/O4
31 I/O3
30 I/O2
29 I/O1
28 NC
27 NC
26 NC
25 NC
I/O1 to I/O8
CE
WE
RE
CLE
ALE
WP
RY/BY
GND
VCC
VSS
I/O port
Chip enable
Write enable
Read enable
Command latch enable
Address latch enable
Write protect
Ready/Busy
Ground input
Power supply
Ground
000707EBA1
xTOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid
situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to
property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most
recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide
for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
xThe TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control
instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
xThe products described in this document are subject to the foreign exchange and foreign trade laws.
xThe information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
xThe information contained herein is subject to change without notice.
2003-01-10 1/44




 TC58DVG02A1FT00
www.DataSheBet4LUO.coCmK DIAGRAM
I/O1
to
I/O8
CE
CLE
ALE
WE
RE
WP
RY/BY
I/O Control circuit
Logic control
RY/BY
Status register
Address register
Command register
Control
TC58DVG02A1FT00
VCC VSS
Column buffer
Column decoder
Data register
Sense amp
Memory cell array
HV generator
ABSOLUTE MAXIMUM RATINGS
SYMBOL
RATING
VCC
VIN
VI/O
PD
Tsolder
Tstg
Topr
Power Supply Voltage
Input Voltage
Input/Output Voltage
Power Dissipation
Soldering Temperature (10s)
Storage Temperature
Operating Temperature
VALUE
0.6 to 4.6
0.6 to 4.6
0.6 V to VCC  0.3 V (d 4.6 V)
0.3
260
55 to 150
0 to 70
CAPACITANCE *(Ta 25°C, f 1 MHz)
SYMB0L
PARAMETER
CONDITION
CIN Input
VIN 0 V
COUT
Output
VOUT 0 V
* This parameter is periodically sampled and is not tested for every device.
MIN


MAX
10
10
UNIT
V
V
V
W
°C
°C
°C
UNIT
pF
pF
2003-01-10 2/44




 TC58DVG02A1FT00
www.DataSheVetA4UL.cIoDm BLOCKS (1)
TC58DVG02A1FT00
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
NVB Number of Valid Blocks
8032

8192
Blocks
(1) The TC58DVG02A1 occasionally contains unusable blocks. Refer to Application Note (14) toward the end of this document.
The first block (block address #00) is guaranteed to be a valid block at the time of shipment.
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
PARAMETER
VCC Power Supply Voltage
VIH High Level input Voltage
VIL Low Level Input Voltage
* 2 V (pulse width lower than 20 ns)
MIN
2.7
2.0
0.3*
TYP.
3.3


MAX
3.6
VCC  0.3
0.8
UNIT
V
V
V
DC CHARACTERISTICS (Ta 0° to 70°C, VCC 2.7 V to 3.6 V)
SYMBOL
PARAMETER
CONDITION
MIN
IIL
ILO
ICCO1
ICCO3
Input Leakage Current
VIN 0 V to VCC
Output Leakage Current
VOUT 0 V to VCC
Operating Current (Serial Read) CE VIL, IOUT 0 mA, tcycle 50 ns
Operating Current
(Command Input)
tcycle 50 ns
ICCO4
ICCO5
Operating Current (Data Input)
Operating Current
(Address Input)
tcycle 50 ns
tcycle 50 ns
ICCO7
Programming Current
ICCO8
Erasing Current
ICCS1
Standby Current
ICCS2
Standby Current
VOH
High Level Output Voltage
VOL Low Level Output Voltage
IOL ( RY/BY ) Output Current of RY/BY pin


CE VIH, WP 0V/VCC
CE VCC  0.2 V, WP 0V/VCC
IOH 400 PA
IOL 2.1 mA
VOL 0.4 V










2.4


TYP.


10
10
10
10
10
10

10


8
MAX
r10
r10
30
30
30
30
30
30
1
50

0.4

UNIT
PA
PA
mA
mA
mA
mA
mA
mA
mA
PA
V
V
mA
2003-01-10 3/44




Recommended third-party TC58DVG02A1FT00 Datasheet







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)