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Power Transistor. 2SC1970 Datasheet

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Power Transistor. 2SC1970 Datasheet






2SC1970 Transistor. Datasheet pdf. Equivalent




2SC1970 Transistor. Datasheet pdf. Equivalent





Part

2SC1970

Description

Silicon NPN Power Transistor



Feature


isc Silicon NPN Power Transistor INCHAN GE Semiconductor 2SC1970 DESCRIPTION High Power Gain- : Gpe≥ 9.2dB,f= 175 MHz, PO= 1W; VCC= 13.5V ·High Reliabil ity ·100% avalanche tested ·Minimum L ot-to-Lot variations for robust device performance and reliable operation APP LICATIONS ·Designed for RF power ampli fiers on VHF band mobile radio applicat ions. ABSOLUTE MAXIMUM R.
Manufacture

Inchange Semiconductor

Datasheet
Download 2SC1970 Datasheet


Inchange Semiconductor 2SC1970

2SC1970; ATINGS (Ta=25℃) SYMBOL PARAMETER VA LUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltag e RBE= ∞ 17 V VEBO Emitter-Base V oltage 4 V IC Collector Current Co llector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ Tj Junction Temperature 0.6 A 5 W 1 150 ℃ Tstg Storage Temperature R ange -55~150 ℃ THERMAL CHA.


Inchange Semiconductor 2SC1970

RACTERISTICS SYMBOL PARAMETER MAX UNI T Rth j-a Thermal Resistance,Junction to Ambient 125 ℃/W Rth j-c Thermal R esistance,Junction to Case 25 ℃/W i sc website:www.iscsemi.cn 1 isc & is csemi is registered trademark isc Sili con NPN Power Transistor INCHANGE Semi conductor 2SC1970 ELECTRICAL CHARACTER ISTICS TC=25℃ unless otherwise specif ied SYMBOL PARAMETER CO.


Inchange Semiconductor 2SC1970

NDITIONS V(BR)CBO Collector-Base Breakd own Voltage IC= 5mA, IE= 0 V(BR)CEO C ollector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ V(BR)EBO Emitter-Base B reakdown Voltage IE= 1mA, IC= 0 ICBO Collector Cutoff Current VCB= 25V; IE = 0 IEBO Emitter Cutoff Current VEB= 3V; IC= 0 hFE DC Current Gain IC= 0 .1A; VCE= 10V PO Output Power ηC C ollector Efficiency .

Part

2SC1970

Description

Silicon NPN Power Transistor



Feature


isc Silicon NPN Power Transistor INCHAN GE Semiconductor 2SC1970 DESCRIPTION High Power Gain- : Gpe≥ 9.2dB,f= 175 MHz, PO= 1W; VCC= 13.5V ·High Reliabil ity ·100% avalanche tested ·Minimum L ot-to-Lot variations for robust device performance and reliable operation APP LICATIONS ·Designed for RF power ampli fiers on VHF band mobile radio applicat ions. ABSOLUTE MAXIMUM R.
Manufacture

Inchange Semiconductor

Datasheet
Download 2SC1970 Datasheet




 2SC1970
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1970
DESCRIPTION
·High Power Gain-
: Gpe9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V
·High Reliability
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for RF power amplifiers on VHF band mobile radio
applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage RBE=
17
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current
Collector Power Dissipation
@TC=25
PC
Collector Power Dissipation
@Ta=25
Tj
Junction Temperature
0.6
A
5
W
1
150
Tstg
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-a Thermal Resistance,Junction to Ambient 125 /W
Rth j-c Thermal Resistance,Junction to Case
25 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




 2SC1970
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1970
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA, IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE=
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA, IC= 0
ICBO
Collector Cutoff Current
VCB= 25V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
hFE
DC Current Gain
IC= 0.1A; VCE= 10V
PO
Output Power
ηC
Collector Efficiency
VCC= 13.5V; Pin= 0.12W;
f= 175MHz
MIN TYP. MAX UNIT
40
V
17
V
4
V
0.1 mA
0.1 mA
10
180
1
1.2
W
50
60
%
hFE Classifications
X
A
B
C
D
10-25 20-45 35-70 55-110 90-180
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time
without notification. The information contained herein is presented only as a guide for the
applications of our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in
equipment which could have applications in hazardous environments, aerospace industry, or
medical field. Please contact us if you intend our products to be used in these special
applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products,
and specifically disclaims any and all liability, including without limitation special,
consequential or incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark







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