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Power Transistor. 2SC1971 Datasheet

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Power Transistor. 2SC1971 Datasheet






2SC1971 Transistor. Datasheet pdf. Equivalent




2SC1971 Transistor. Datasheet pdf. Equivalent





Part

2SC1971

Description

Silicon NPN Power Transistor



Feature


www.DataSheet4U.com INCHANGE Semiconduc tor isc Product Specification isc Sil icon NPN Power Transistor 2SC1971 DES CRIPTION ·High Power Gain: Gpe≥ 10dB ,f= 175MHz, PO= 6W; VCC= 13.5V ·High R eliability APPLICATIONS ·Designed for RF power amplifiers on VHF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEB O IC PARAMETER Collector-.
Manufacture

Inchange Semiconductor

Datasheet
Download 2SC1971 Datasheet


Inchange Semiconductor 2SC1971

2SC1971; Base Voltage VALUE 35 UNIT V Collector -Emitter Voltage RBE= ∞ Emitter-Base Voltage Collector Current Collector Po wer Dissipation @TC=25℃ PC w w s c s i . w 17 4 2 12.5 1.5 150 -55~150 V V n c . i m e A W Collector Power D issipation @Ta=25℃ Tj Tstg Junction Temperature Storage Temperature Range ℃ ℃ THERMAL CHARACTERISTICS SYMBO L Rth j-a Rth j-c PARAMETER .


Inchange Semiconductor 2SC1971

Thermal Resistance,Junction to Ambient T hermal Resistance,Junction to Case MAX 83 10 UNIT ℃/W ℃/W isc Website:w ww.iscsemi.cn www.DataSheet4U.com INC HANGE Semiconductor isc Product Specif ication isc Silicon NPN Power Transist or ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAM ETER CONDITIONS MIN 2SC1971 TYP. MAX UNIT V(BR)CBO Collecto.


Inchange Semiconductor 2SC1971

r-Base Breakdown Voltage IC= 10mA, IE= 0 35 V V(BR)CEO Collector-Emitter B reakdown Voltage IC= 50mA; RBE= ∞ 1 7 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA, IC= 0 4 V ICBO Co llector Cutoff Current VCB= 25V; IE= 0 0.5 mA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 0.5 mA hFE DC Curr ent Gain IC= 0.1A; VCE= 10V PO Outpu t Power ηC Collect.

Part

2SC1971

Description

Silicon NPN Power Transistor



Feature


www.DataSheet4U.com INCHANGE Semiconduc tor isc Product Specification isc Sil icon NPN Power Transistor 2SC1971 DES CRIPTION ·High Power Gain: Gpe≥ 10dB ,f= 175MHz, PO= 6W; VCC= 13.5V ·High R eliability APPLICATIONS ·Designed for RF power amplifiers on VHF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEB O IC PARAMETER Collector-.
Manufacture

Inchange Semiconductor

Datasheet
Download 2SC1971 Datasheet




 2SC1971
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SC1971
DESCRIPTION
·High Power Gain-
: Gpe10dB,f= 175MHz, PO= 6W; VCC= 13.5V
·High Reliability
APPLICATIONS
·Designed for RF power amplifiers on VHF band mobile radio
applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
i.cnCollector-Base Voltage
.iscsemCollector-Emitter Voltage RBE=
wwwEmitter-Base Voltage
VALUE UNIT
35 V
17 V
4V
IC Collector Current
2A
Collector Power Dissipation
@TC=25
PC
Collector Power Dissipation
@Ta=25
12.5
W
1.5
Tj Junction Temperature
150
Tstg Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-a Thermal Resistance,Junction to Ambient 83 /W
Rth j-c Thermal Resistance,Junction to Case
10 /W
isc Websitewww.iscsemi.cn




 2SC1971
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SC1971
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CBO Collector-Base Breakdown Voltage
IC= 10mA, IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE=
35
17
V
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA, IC= 0
4
V
ICBO Collector Cutoff Current
VCB= 25V; IE= 0
0.5 mA
IEBO Emitter Cutoff Current
VEB= 3V; IC= 0
0.5 mA
hFE DC Current Gain
i.cnPO Output Power
.iscsemηC Collector Efficiency
www‹ hFE Classifications
IC= 0.1A; VCE= 10V
VCC= 13.5V; Pin= 0.6W;
f= 175MHz
10 180
67
W
60 70
%
XABCD
10-25 20-45 35-70 55-110 90-180
isc Websitewww.iscsemi.cn







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