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2SD970. D970 Datasheet

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2SD970. D970 Datasheet
















D970 2SD970. Datasheet pdf. Equivalent













Part

D970

Description

2SD970



Feature


2SD970(K) www.DataSheet4U.com Silicon N PN Triple Diffused Application Medium speed and power switching complementary pair with 2SB791(K) Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 2 kΩ (Typ) 200 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector.
Manufacture

Hitachi Semiconductor

Datasheet
Download D970 Datasheet


Hitachi Semiconductor D970

D970; current Collector peak current Collecto r power dissipation Junction temperatur e Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 Ratings 120 12 0 7 8 12 40 150 –55 to +150 Unit V V V A A W °C °C 2SD970(K) www.DataShe et4U.com Electrical Characteristics (T a = 25°C) Item Symbol Min 120 7 — 1000 — — — — — — — Typ — —.


Hitachi Semiconductor D970

— — — — — — — 0.4 5.4 1.1 Max — — 100 10 20000 1.5 3.0 2.0 3 .5 — — — V V V V µs µs µs Unit V V µA µA Test conditions I C = 25 m A, RBE = ∞ I E = 50 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 100 V, RBE = ∞ VC E = 3 V, IC = 4 A*1 I C = 4 A, IB = 8 m A*1 I C = 8 A, IB = 80 mA*1 I C = 4 A, IB = 8 mA*1 I C = 8 A, IB = 80 mA*1 I C = 4 A, IB1 = –IB2 = 8 mA Collector to emitter brea.


Hitachi Semiconductor D970

kdown V(BR)CEO voltage Emitter to base b reakdown voltage Collector cutoff curre nt V(BR)EBO I CBO I CEO DC current tran sfer ratio Collector to emitter saturat ion voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 t on t s tg tf Maximum Collector Dissipation Cu rve 60 Collector p.





Part

D970

Description

2SD970



Feature


2SD970(K) www.DataSheet4U.com Silicon N PN Triple Diffused Application Medium speed and power switching complementary pair with 2SB791(K) Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 2 kΩ (Typ) 200 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector.
Manufacture

Hitachi Semiconductor

Datasheet
Download D970 Datasheet




 D970
www.DataSheet4U.com
2SD970(K)
Silicon NPN Triple Diffused
Application
Medium speed and power switching complementary pair with 2SB791(K)
Outline
TO-220AB
2
1
23
1. Base
2. Collector
(Flange)
3. Emitter
1
2 k
(Typ)
200
(Typ)
3
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC * 1
Tj
Tstg
Ratings
120
120
7
8
12
40
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C




 D970
2SD970(K)
wEwwle.DcattraiSchaeletC4Uh.caormacteristics (Ta = 25°C)
Item
Symbol Min
Collector to emitter breakdown V(BR)CEO
voltage
120
Emitter to base breakdown
voltage
V(BR)EBO
7
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time
Storage time
Fall time
Note: 1. Pulse test.
I CBO
I CEO
hFE
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
t on
t stg
tf
1000
Typ
0.4
5.4
1.1
Max Unit
—V
—V
100 µA
10 µA
20000
1.5 V
3.0 V
2.0 V
3.5 V
µs
µs
µs
Test conditions
IC = 25 mA, RBE =
IE = 50 mA, IC = 0
VCB = 120 V, IE = 0
VCE = 100 V, RBE =
VCE = 3 V, IC = 4 A*1
IC = 4 A, IB = 8 mA*1
IC = 8 A, IB = 80 mA*1
IC = 4 A, IB = 8 mA*1
IC = 8 A, IB = 80 mA*1
IC = 4 A, IB1 = –IB2 = 8 mA
Maximum Collector Dissipation Curve
60
40
20
0 50 100 150
Case temperature TC (°C)
Area of Safe Operation
30
iC (peak)
1 µs
10
IC max
(Continuous)
3
1.0
0.3
0.1
Ta = 25°C
1 shot pulse
0.03
1 3 10 30 100 300 1,000
Collector to emitter voltage VCE (V)
2




 D970
www.DataSheet4U.com
Typical Output Characteristics
10
TC = 25°C
1.8
8 1.6
1.4
2.0
6
0.6 mA
4
1.2 1.0 0.8
2
IB = 0
0 12345
Collector to emitter voltage VCE (V)
Saturation Voltage vs. Collector Current
10
5
2 VBE (sat)
1.0
lC/lB = 200
500
0.5
0.2
0.1
0.1
VCE (sat)
lC/lB = 500
200
TC = 25°C
0.2 0.5 1.0 2
5
Collector current IC (A)
10
2SD970(K)
10,000
DC Current Transfer Ratio
vs. Collector Current
3,000
1,000
300
T
=
C
75°C
25°C–25°C
VCE = 3 V
100
0.1
0.3 1.0 3
Collector current IC (A)
10
Switching Time vs. Collector Current
10
tstg
3
tf
1.0
ton
0.3
0.1
0.03
0.01
0.1
Ta = 25°C
VCC = 30 V
IC = 500 IB1 = –500 IB2
0.3 1.0 3
Collector current IC (A)
10
3




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