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BGA MOSFET. FDZ294N Datasheet

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BGA MOSFET. FDZ294N Datasheet
















FDZ294N MOSFET. Datasheet pdf. Equivalent













Part

FDZ294N

Description

N-Channel 2.5 V Specified PowerTrench BGA MOSFET



Feature


www.DataSheet4U.com FDZ294N July 2005 FDZ294N N-Channel 2.5 V Specified Powe rTrench® BGA MOSFET General Descriptio n Combining Fairchild’s advanced 2.5V specified PowerTrench process with sta te of the art BGA packaging, the FDZ294 N minimizes both PCB space This BGA MOS FET embodies a and RDS(ON). breakthroug h in packaging technology which enables the device to combin.
Manufacture

Fairchild Semiconductor

Datasheet
Download FDZ294N Datasheet


Fairchild Semiconductor FDZ294N

FDZ294N; e excellent thermal transfer characteris tics, high current handling capability, ultralow profile packaging, low gate c harge, and low RDS(ON). Features • 6 A, 20 V RDS(ON) = 23 mΩ @ VGS = 4.5 V RDS(ON) = 34 mΩ @ VGS = 2.5 V • O ccupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6 • U ltra-thin package: less than 0.85mm hei ght when mounted to PCB • Ou.


Fairchild Semiconductor FDZ294N

tstanding thermal transfer characteristi cs: 4 times better than SSOT-6 • Ultr a-low Qg x RDS(ON) figure-of-merit • High power and current handling capabil ity. Applications • Battery manageme nt • Battery protection D GATE G I ndex slot Bottom S Top Absolute Maxi mum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source V oltage Drain Current – Con.


Fairchild Semiconductor FDZ294N

tinuous – Pulsed TA=25oC unless other wise noted Parameter Ratings 20 ±12 (Note 1a) Units V V A W °C 6 10 1.7 –55 to +150 Power Dissipation for Si ngle Operation (Note 1a) Operating an d Storage Junction Temperature Range T hermal Characteristics RθJA Thermal Re sistance, Junction-to-Ambient (Note 1a) 72 °C/W Package Marking and Orderi ng Information Device Mark.





Part

FDZ294N

Description

N-Channel 2.5 V Specified PowerTrench BGA MOSFET



Feature


www.DataSheet4U.com FDZ294N July 2005 FDZ294N N-Channel 2.5 V Specified Powe rTrench® BGA MOSFET General Descriptio n Combining Fairchild’s advanced 2.5V specified PowerTrench process with sta te of the art BGA packaging, the FDZ294 N minimizes both PCB space This BGA MOS FET embodies a and RDS(ON). breakthroug h in packaging technology which enables the device to combin.
Manufacture

Fairchild Semiconductor

Datasheet
Download FDZ294N Datasheet




 FDZ294N
www.DataSheet4U.com
July 2005
FDZ294N
N-Channel 2.5 V Specified PowerTrench® BGA MOSFET
General Description
Combining Fairchild’s advanced 2.5V specified
PowerTrench process with state of the art BGA
packaging, the FDZ294N minimizes both PCB space
and RDS(ON). This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low RDS(ON).
Applications
Battery management
Battery protection
Features
6 A, 20 V
RDS(ON) = 23 m@ VGS = 4.5 V
RDS(ON) = 34 m@ VGS = 2.5 V
Occupies only 2.25 mm2 of PCB area.
Less than 50% of the area of a SSOT-6
Ultra-thin package: less than 0.85mm height when
mounted to PCB
Outstanding thermal transfer characteristics:
4 times better than SSOT-6
Ultra-low Qg x RDS(ON) figure-of-merit
High power and current handling capability.
GATE
D
Bottom
Index
slot
Top
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
TJ, TSTG
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
E
FDZ294N
7”
©2005 Fairchild Semiconductor Corporation
G
Ratings
20
±12
6
10
1.7
–55 to +150
72
Tape width
8mm
S
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
FDZ294N Rev. B3 (W)




 FDZ294N
www.DataSheet4U.com
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown
Voltage
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage.
VGS = 0 V,
ID = 250 µA
ID = 250 µA,Referenced to 25°C
VDS = 16 V,
VGS = ±12 V,
VGS = 0 V
VDS = 0 V
20
12
V
mV/°C
1
±100
µA
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS Forward Transconductance
VDS = VGS,
ID = 250 µA
ID = 250 µA,Referenced to 25°C
VGS = 4.5 V,
VGS = 2.5 V,
VGS = 4.5 V,
VDS = 5 V,
ID = 6 A,
ID = 5A,
ID = 6 A, TJ=125°C
ID = 6 A
0.6 0.9
–3
18
26
24
24
1.5 V
mV/°C
23 m
34
31
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
VDS = 10 V,
f = 1.0 MHz
V GS = 0 V,
VGS = 15 mV, f = 1.0 MHz
670 pF
172 pF
105 pF
1.4
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
VDD = 10 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6
VDS = 10V,
VGS = 4.5 V
ID = 6 A,
8 16
5 10
14 25
6 12
7 10
1.4
2.1
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
1.4 A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 1.4 A (Note 2)
0.7 1.2
V
trr
Qrr
Notes:
Diode Reverse Recovery Time IF = 6 A,
Diode Reverse Recovery Charge diF/dt = 100 A/µs
15 nS
4 nC
1. RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to
the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the
copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design.
a) 72°C/W when
mounted on a 1in2 pad
of 2 oz copper, 1.5” x
1.5” x 0.062” thick
PCB
b) 157°C/W when mounted
on a minimum pad of 2 oz
copper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDZ294N Rev. B3 (W)




 FDZ294N
www.DataSheet4U.com
Typical Characteristics
35
VGS = 4.5V
30
3.5V
3.0V
25
2.5V
20
15
10 2.0V
5
0
0 0.5 1 1.5 2 2.5 3
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2.8
2.6
VGS = 2.0V
2.4
2.2
2
1.8
1.6 2.5V
1.4
1.2
1
0.8
0
5
3.0V
3.5V
10 15
ID, DRAIN CURRENT (A)
4.5V
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = 6A
VGS = 4.5V
1.4
1.2
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
0.08
0.07
ID =3A
0.06
0.05
0.04
TA = 125oC
0.03
0.02
TA = 25oC
0.01
1.5
2 2.5 3 3.5 4 4.5
VGS, GATE TO SOURCE VOLTAGE (V)
5
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
35
VDS = 5V
30
TA = -55oC
25oC
25
125oC
20
15
10
5
0
1 1.5 2 2.5 3 3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDZ294N Rev. B3 (W)




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