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Photodiode Array. AA16-9DIL18 Datasheet

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Photodiode Array. AA16-9DIL18 Datasheet
















AA16-9DIL18 Array. Datasheet pdf. Equivalent













Part

AA16-9DIL18

Description

Avalanche Photodiode Array



Feature


www.DataSheet4U.com AA16-9 DIL18 16 Ele ment Avalanche Photodiode Array Special characteristics: quantum efficiency >8 0% at λ 760-910 nm high speed, low noi se good uniformity between elements low cross talk Parameters: no. of Element s Active Area / Element [µm] Gap / Sep aration [µm] Pitch [µm] Spectral Rang e Spectral Responsivity 1) (at 905 nm, M = 100) Max. Gain (Ip.
Manufacture

HY ELECTRONIC

Datasheet
Download AA16-9DIL18 Datasheet


HY ELECTRONIC AA16-9DIL18

AA16-9DIL18; o= 1nA) Dark Current 1) (M = 100) Capaci tance 1)/Element (M=100) Breakdown Volt age UBR (at ID = 2 µA) Rise Time at 90 5 nm, 50 Ω Cross-talk (at 905 nm) Pho to Current Uniformity (at M= 50) Dark C urrent Uniformity (at M= 50) Operating Temperature Storage Temperature AA16-9 DIL18 16 648 * 208 Package DIL18: 18 17 16 15 14 13 12 11 10 112 320 450 1 050 min. 55 A/W typ. .


HY ELECTRONIC AA16-9DIL18

60 A/W typ. 100 typ. 5 nA 0.7 1 2 3 4 5 22.8 1.5 6 7 8 9 7.62 window 2.2 2.54 typ. 2 pF 100 300 V typ. 2 ns typ. 5 0 dB ± 20 % typ. ± 5 % ± 20 % typ. 5 % -20 ... +70 °C -60 ... +100 °C 7.5 Pin no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1) measurement cond itions: Setup of photo current 1.0 nA a t M = 1 and irradiation by a IRED (880 nm, 80 nm bandwith). Inc.


HY ELECTRONIC AA16-9DIL18

rease the photo current up to 100 nA, (M = 100) by internal multiplication due to an increasing bias voltage. Functio n Element 1 Element 3 Element 5 Element 7 Element 9 Element 11 Element 13 Elem ent 15 Guard Ring Element 16 Element 14 Element 12 Element 10 Common Anode Ele ment 8 Element 6 Element 4 Element 2 w ww.silicon-sensor.com Version: 06-03-03 Specification bef.




Part

AA16-9DIL18

Description

Avalanche Photodiode Array



Feature


www.DataSheet4U.com AA16-9 DIL18 16 Ele ment Avalanche Photodiode Array Special characteristics: quantum efficiency >8 0% at λ 760-910 nm high speed, low noi se good uniformity between elements low cross talk Parameters: no. of Element s Active Area / Element [µm] Gap / Sep aration [µm] Pitch [µm] Spectral Rang e Spectral Responsivity 1) (at 905 nm, M = 100) Max. Gain (Ip.
Manufacture

HY ELECTRONIC

Datasheet
Download AA16-9DIL18 Datasheet




 AA16-9DIL18
www.DataSheet4U.com
AA16-9 DIL18
16 Element
Avalanche Photodiode Array
Special characteristics:
quantum efficiency >80% at λ 760-910 nm
high speed, low noise
good uniformity between elements
low cross talk
Parameters:
no. of Elements
Active Area / Element
[µm]
Gap / Separation
[µm]
Pitch
[µm]
Spectral Range
Spectral Responsivity 1)
(at 905 nm, M = 100)
Max. Gain
(Ipo= 1nA)
Dark Current 1)
(M = 100)
Capacitance 1)/Element
(M=100)
Breakdown Voltage UBR
(at ID = 2 µA)
Rise Time
at 905 nm, 50
Cross-talk
(at 905 nm)
Photo Current Uniformity
(at M= 50)
Dark Current Uniformity
(at M= 50)
Operating Temperature
Storage Temperature
AA16-9 DIL18
16
648 * 208
112
320
450 … 1050
min. 55 A/W
typ. 60 A/W
typ. 100
typ. 5 nA
typ. 2 pF
100 … 300 V
typ. 2 ns
typ. 50 dB
± 20 %
typ. ± 5 %
± 20 %
typ. ± 5 %
-20 ... +70 °C
-60 ... +100 °C
1) measurement conditions:
Setup of photo current 1.0 nA at M = 1 and irradiation by a IRED
(880 nm, 80 nm bandwith).
Increase the photo current up to 100 nA, (M = 100) by internal multiplication
due to an increasing bias voltage.
www.silicon-sensor.com
Version: 06-03-03
Specification before: AD-LA-16-9-DIL 18
Order Number: 500038
Package DIL18:
18 17 16 15 14 13 12 11 10
1 2 34 56 78 9
22.8
1.5
window
0.7
2.54
Pin no.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Function
Element 1
Element 3
Element 5
Element 7
Element 9
Element 11
Element 13
Element 15
Guard Ring
Element 16
Element 14
Element 12
Element 10
Common Anode
Element 8
Element 6
Element 4
Element 2
www.pacific-sensor.com




 AA16-9DIL18
www.DataSheet4U.coSmpectral Responsivity at M = 1
series - 9
0,700
0,600
0,500
0,400
0,300
0,200
0,100
0,000
400 500 600 700 800 900 1000
W avelength (nm)
1100
70,00
60,00
50,00
40,00
30,00
20,00
10,00
0,00
400
Spectral Responsivity at M = 100
series - 9
500
600
700
800
900
1000
1100
W a v e le ngth (nm)
100,0
90,0
80,0
70,0
60,0
50,0
40,0
30,0
20,0
10,0
0,0
400
Quantum Efficiency for M = 100
series - 9
500
600
700 800
W a v e le ngth (nm)
900
1000
1100
Example of DC-Operating Circuit:
16x Transimpedance Amplifier
Maximum Ratings:
ƒ max. electrical power dissipation
ƒ max. optical peak value, once
ƒ max. continous optical operation
ƒ ( Pelectr. = Popt. * Sabs * M * UR )
400 mW at 22°C
200 mW for 1 s
IPh (DC) 250 µA
1 mA for signal 50 µs "on" / 1 ms "off"
Application Hints:
ƒ Current should be limited by a protecting resistor or current limiting -
IC inside the power supply.
ƒ Use of low noise read-out - IC.
ƒ For high gain applications bias voltage should be temperature compensated.
ƒ For low light level applications, blocking of ambient light should be used.
Diode, protective circuit
C1 C2 C3
Common Anode
C16 GR
AD-LA-16-9
R
-UR
Handling Precautions:
ƒ Soldering temperature
260 °C for max. 10 s. The device must be protected against solder flux vapour!
ƒ min. Pin - length
2 mm
ƒ ESD - protection
Standard precautionary measures are sufficient.
ƒ Storage
Store devices in conductive foam.
ƒ Avoid skin contact with window!
ƒ Clean window with Ethyl alcohol if necessary.
ƒ Do not scratch or abrade window.
Out 1
Out 16
Silicon Sensor GmbH
Ostendstr. 1
12459 Berlin
Germany
Phone: +49 (0)30-63 99 23 10
Fax: +49 (0)30-63 99 23 33
E-Mail: sales@silicon-sensor.de
Deutschland:
Inselkammerstraße 10
D-82008 Unterhaching
Tel: 089 614 503-10
E-Mail: power@hy-line.de
URL: www.hy-line.de
Schweiz:
Gründenstraße 82
CH-8247 Flurlingen
Tel.: 052 647 42 00
E-Mail: power@hy-line.ch
URL: www.hy-line.ch








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