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Power MOSFET. 2N7400 Datasheet

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Power MOSFET. 2N7400 Datasheet
















2N7400 MOSFET. Datasheet pdf. Equivalent













Part

2N7400

Description

N-Channel Power MOSFET



Feature


www.DataSheet4U.com JANSR2N7400 8A, 200 V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET Description The Discrete Produc ts Operation of Intersil Corporation ha s developed a series of Radiation Harde ned MOSFETs specifically designed for c ommercial and military space applicatio ns. Enhanced Power MOSFET immunity to S ingle Event Effects (SEE), Single Event Gate Rupture (SEG.
Manufacture

Intersil Corporation

Datasheet
Download 2N7400 Datasheet


Intersil Corporation 2N7400

2N7400; R) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to har sh space environments. The dose rate an d neutron tolerance necessary for milit ary applications have not been sacrifi ced. The Intersil portfolio of SEGR res istant radiation hardened MOSFETs inclu des N-Channel and P-Channel devices in a variety of voltage.


Intersil Corporation 2N7400

, current and on-resistance ratings. Num erous packaging options are also availa ble. This MOSFET is an enhancement-mode silicon-gate power field-effect trans istor of the vertical DMOS (VDMOS) stru cture. It is specially designed and pro cessed to be radiation tolerant. The MO SFET is well suited for applications ex posed to radiation environments such as switching regulatio.


Intersil Corporation 2N7400

n, switching converters, motor drives, r elay drivers and drivers for high-power bipolar switching transistors requirin g high speed and low gate drive power. This type can be operated directly from integrated circuits. BRAND JANSR2N7400 Formerly FSS230R4 June 1998 Features • 8A, 200V, rDS(ON) = 0.440Ω • T otal Dose - Meets Pre-RAD Specificatio ns to 100K RAD (Si) • Sing.





Part

2N7400

Description

N-Channel Power MOSFET



Feature


www.DataSheet4U.com JANSR2N7400 8A, 200 V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET Description The Discrete Produc ts Operation of Intersil Corporation ha s developed a series of Radiation Harde ned MOSFETs specifically designed for c ommercial and military space applicatio ns. Enhanced Power MOSFET immunity to S ingle Event Effects (SEE), Single Event Gate Rupture (SEG.
Manufacture

Intersil Corporation

Datasheet
Download 2N7400 Datasheet




 2N7400
www.DataSheet4U.com
Formerly FSS230R4
June 1998
JANSR2N7400
8A, 200V, 0.440 Ohm, Rad Hard,
N-Channel Power MOSFET
Features
• 8A, 200V, rDS(ON) = 0.440
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and
VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 3.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
Ordering Information
PART NUMBER
PACKAGE
JANSR2N7400
TO-257AA
BRAND
JANSR2N7400
Description
The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs specif-
ically designed for commercial and military space applica-
tions. Enhanced Power MOSFET immunity to Single Event
Effects (SEE), Single Event Gate Rupture (SEGR) in particu-
lar, is combined with 100K RADS of total dose hardness to
provide devices which are ideally suited to harsh space envi-
ronments. The dose rate and neutron tolerance necessary
for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
Also available at other radiation and screening levels. See us
on the web, Intersil’s home page: http://www.intersil.com.
Contact your local Intersil Sales Office for additional
information.
Die Family TA17637.
MIL-PRF-19500/632.
Symbol
Package
TO-257AA
S
D
G
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
2-58
File Number 4373.1




 2N7400
JANSR2N7400
www.DatAaSbhseoetl4uUt.ecoMmaximum Ratings TC = 25oC, Unless Otherwise Specified
JANSR2N7400
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200
200
8
5
24
±20
50
20
0.40
V
V
A
A
A
V
W
W
W/oC
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . IAS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
24
8
24
-55 to 150
300
4.4
A
A
A
oC
oC
g
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On-State Voltage
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge (Not on Slash Sheet)
Gate Charge at 12V
Threshold Gate Charge (Not on Slash Sheet)
Gate Charge Source
Gate Charge Drain
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
ID = 1mA, VGS = 0V
VGS = VDS,
ID = 1mA
TC = -55oC
TC = 25oC
TC = 125oC
VDS = 160V,
VGS = 0V
TC = 25oC
TC = 125oC
VGS = ±20V
TC = 25oC
TC = 125oC
VDS(ON)
rDS(ON)12
VGS = 12V, ID = 8A
ID = 5A,
VGS = 12V
TC = 25oC
TC = 125oC
td(ON)
tr
td(OFF)
VDD = 100V, ID = 8A,
RL = 12.5, VGS = 12V,
RGS = 7.5
tf
Qg (TOT)
Qg (12)
VGS = 0V to 20V VDD = 100V,
VGS = 0V to 12V ID = 8A,
Qg(TH) VGS = 0V to 2V
Qgs
Qgd
RθJC
RθJA
MIN TYP MAX UNITS
200 -
-V
- - 5.0 V
1.5 - 4.0 V
0.5 -
-V
- - 25 µA
- - 250 µA
- - 100 nA
- - 200 nA
- - 3.70 V
- 0.320 0.440
- - 0.744
- - 65 ns
- - 160 ns
- - 120 ns
- - 90 ns
- - 64 nC
- 33 42 nC
- - 3.1 nC
- 7.8 12 nC
- 17 22 nC
- - 2.5 oC/W
- - 60 oC/W
2-59




 2N7400
JANSR2N7400
www.DatSaSohuerect4eUt.coomDrain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
Forward Voltage
Reverse Recovery Time
VSD
ISD = 8A
trr ISD = 8A, dISD/dt = 100A/µs
0.6 -
--
Electrical Specifications up to 100K RAD TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Volts (Note 3)
Gate to Source Threshold Volts (Note 3)
Gate to Body Leakage
(Notes 2, 3)
Zero Gate Leakage
(Note 3)
Drain to Source On-State Volts (Notes 1, 3)
Drain to Source On Resistance (Notes 1, 3)
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
BVDSS
VGS(TH)
IGSS
IDSS
VDS(ON)
rDS(ON)12
VGS = 0, ID = 1mA
VGS = VDS, ID = 1mA
VGS = ±20V, VDS = 0V
VGS = 0, VDS = 160V
VGS = 12V, ID = 8A
VGS = 12V, ID = 5A
200
1.5
-
-
-
-
3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.
Single Event Effects (SEB, SEGR) (Note 4)
MAX
1.8
340
MAX
-
4.0
100
25
3.70
0.440
TEST
SYMBOL
ENVIRONMENT (NOTE 5)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
APPLIED
VGS BIAS
(V)
Single Event Effects Safe Operating
SEESOA
Ni
26
43 -20
Area
Br 37 36 -5
Br 37 36 -10
Br 37 36 -15
Br 37 36 -20
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
UNITS
V
ns
UNITS
V
V
nA
µA
V
(NOTE 6)
MAXIMUM
VDS BIAS
(V)
200
200
160
100
40
Typical Performance Curves Unless Otherwise Specified
LET = 26MeV/mg/cm2, RANGE = 43µ
LET = 37MeV/mg/cm2, RANGE = 36µ
240
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
1E-3
200
1E-4
160 ILM = 10A
120
80
40
TEMP = 25oC
0
0 -5 -10 -15 -20 -25
VGS (V)
1E-5
1E-6
1E-7
10
30A
100A
300A
30 100 300
DRAIN SUPPLY (V)
1000
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO IAS
2-60




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