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Power-Transistor. IPB80N04S2-04 Datasheet

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Power-Transistor. IPB80N04S2-04 Datasheet
















IPB80N04S2-04 Power-Transistor. Datasheet pdf. Equivalent













Part

IPB80N04S2-04

Description

Power-Transistor



Feature


IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2- 04 OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • A utomotive AEC Q101 qualified • MSL1 u p to 260°C peak reflow • 175°C oper ating temperature • Green package (le ad free) • Ultra low Rds(on) • 100% Avalanche tested PG-TO263-3-2 Product Summary V DS R DS(on),max (SMD version ) ID 40 3.4 80 V mΩ A PG-TO220-3-1.
Manufacture

Infineon Technologies

Datasheet
Download IPB80N04S2-04 Datasheet


Infineon Technologies IPB80N04S2-04

IPB80N04S2-04; PG-TO262-3-1 Type IPB80N04S2-04 IPP80 N04S2-04 IPI80N04S2-04 Package PG-TO26 3-3-2 PG-TO220-3-1 PG-TO262-3-1 Orderi ng Code SP0002-18154 SP0002-19054 SP000 2-19058 Marking 2N0404 2N0404 2N0404 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuou s drain current1) www.DataSheet4U.com Symbol ID Conditions T C=25 °C, V GS= 10 V T C=100 °C, V G.


Infineon Technologies IPB80N04S2-04

S=10 V2) Value 80 80 320 810 ±20 Unit A Pulsed drain current2) Avalanche en ergy, single pulse2) Gate source voltag e4) Power dissipation Operating and sto rage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P to t T j, T stg T C=25 °C I D=80A mJ V W °C T C=25 °C 300 -55 ... +175 55/ 175/56 Rev. 1.0 page 1 2006-03-02 I PB80N04S2-04 IPP80N04S.


Infineon Technologies IPB80N04S2-04

2-04, IPI80N04S2-04 Parameter Symbol Con ditions min. Thermal characteristics2) Thermal resistance, junction - case The rmal resistance, junction ambient, lead ed SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 coo ling area5) Electrical characteristics, at T j=25 °C, unless otherwise specif ied Static characteristics Drain-source breakdown voltage .





Part

IPB80N04S2-04

Description

Power-Transistor



Feature


IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2- 04 OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • A utomotive AEC Q101 qualified • MSL1 u p to 260°C peak reflow • 175°C oper ating temperature • Green package (le ad free) • Ultra low Rds(on) • 100% Avalanche tested PG-TO263-3-2 Product Summary V DS R DS(on),max (SMD version ) ID 40 3.4 80 V mΩ A PG-TO220-3-1.
Manufacture

Infineon Technologies

Datasheet
Download IPB80N04S2-04 Datasheet




 IPB80N04S2-04
OptiMOS® Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
Green package (lead free)
PG-TO263-3-2
• Ultra low Rds(on)
• 100% Avalanche tested
IPB80N04S2-04
IPP80N04S2-04, IPI80N04S2-04
Product Summary
V DS
R DS(on),max (SMD version)
ID
40 V
3.4 m
80 A
PG-TO220-3-1
PG-TO262-3-1
Type
IPB80N04S2-04
IPP80N04S2-04
IPI80N04S2-04
Package
PG-TO263-3-2
PG-TO220-3-1
PG-TO262-3-1
Ordering Code Marking
SP0002-18154 2N0404
SP0002-19054 2N0404
SP0002-19058 2N0404
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
www.DataSheet4U.com
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse2) E AS I D=80A
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
80
80
320
810
±20
300
-55 ... +175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 1.0
page 1
2006-03-02




 IPB80N04S2-04
IPB80N04S2-04
IPP80N04S2-04, IPI80N04S2-04
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
- - 0.5 K/W
- - 62
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area5)
-
-
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
40
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=250 µA
2.1
3.0
4.0
Zero gate voltage drain current
I DSS
V DS=40 V, V GS=0 V,
T j=25 °C
-
0.01
1 µA
www.DatGaSahteee-st4oUu.crocme leakage current
Drain-source on-state resistance
I GSS
RDS(on)
V DS=40 V, V GS=0 V,
T j=125 °C2)
V GS=20 V, V DS=0 V
V GS=10 V, I D=80 A,
-
-
-
1 100
1 100 nA
2.9 3.7 m
V GS=10 V, I D=80 A,
SMD version
-
2.6 3.4
Rev. 1.0
page 2
2006-03-02




 IPB80N04S2-04
Parameter
Symbol
Conditions
IPB80N04S2-04
IPP80N04S2-04, IPI80N04S2-04
min.
Values
typ.
Unit
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=20 V, V GS=10 V,
I D=80 A, R G=2.2
-
-
-
-
-
-
-
5300
2200
580
26
45
56
32
- pF
-
-
- ns
-
-
-
Gate Charge Characteristics2)
Gate to source charge
Q gs
- 25 35 nC
Gate to drain charge
Gate charge total
Q gd V DD=32 V, I D=80 A,
-
47 75
Q g V GS=0 to 10 V
- 127 170
Gate plateau voltage
V plateau
- 4.9 - V
Reverse Diode
Diode continous forward current2)
www.DatDaSiohdeeet4pUu.clsoemcurrent2)
Diode forward voltage
IS
I S,pulse
V SD
T C=25 °C
V GS=0 V, I F=80 A,
T j=25 °C
- - 80 A
- - 320
- 0.9 1.3 V
Reverse recovery time2)
t rr
V R=20 V, I F=I S,
di F/dt =100 A/µs
- 53 75 ns
Reverse recovery charge2)
Q rr
V R=20 V, I F=I S,
di F/dt =100 A/µs
- 85 125 nC
1) Current is limited by bondwire; with an R thJC = 0.5K/W the chip is able to carry 208A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
2) Defined by design. Not subject to production test.
3) See diagram 13.
4) Qualified at -20V and +20V.
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2006-03-02




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