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Power-Transistor. IPB80N04S2-H4 Datasheet

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Power-Transistor. IPB80N04S2-H4 Datasheet
















IPB80N04S2-H4 Power-Transistor. Datasheet pdf. Equivalent













Part

IPB80N04S2-H4

Description

Power-Transistor



Feature


OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automo tive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Ultra low Rds(on) • 100% Avalanche tested • Green product (RoHS compliant) IPB80N04S2-H4 IPP80N 04S2-H4, IPI80N04S2-H4 Product Summary V DS R DS(on),max (SMD version) ID 40 V 3.7 mΩ 80 A PG-TO263-3-2 PG-TO2.
Manufacture

Infineon Technologies

Datasheet
Download IPB80N04S2-H4 Datasheet


Infineon Technologies IPB80N04S2-H4

IPB80N04S2-H4; 62-3-1 PG-TO220-3-1 Type IPB80N04S2-H4 IPP80N04S2-H4 IPI80N04S2-0H4 Package P G-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Marking 2N04H4 2N04H4 2N04H4 Maximum r atings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditio ns Continuous drain current1) I D T C =25 °C, V GS=10 V T C=100 °C, V GS=1 0 V2) Pulsed drain current2) I D,puls e T C=25 °C Avalanch.


Infineon Technologies IPB80N04S2-H4

e energy, single pulse E AS I D=80A Ga te source voltage V GS Power dissipat ion P tot T C=25 °C Operating and st orage temperature T j, T stg IEC clima tic category; DIN IEC 68-1 Value 80 80 320 660 ±20 300 -55 ... +175 55/175/5 6 Unit A mJ V W °C Rev. 1.1 page 1 2008-02-22 IPB80N04S2-H4 IPP80N04S2-H 4, IPI80N04S2-H4 Parameter Symbol Co nditions min. Value.


Infineon Technologies IPB80N04S2-H4

s typ. Unit max. Thermal characteristi cs2) Thermal resistance, junction - ca se R thJC Thermal resistance, junction ambient, leaded R thJA - - 0.5 K/W - - 62 SMD version, device on PCB R th JA minimal footprint 6 cm2 cooling are a3) - - 62 - 40 Electrical character istics, at T j=25 °C, unless otherwise specified Static characteristics Drai n-source breakdown .





Part

IPB80N04S2-H4

Description

Power-Transistor



Feature


OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automo tive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Ultra low Rds(on) • 100% Avalanche tested • Green product (RoHS compliant) IPB80N04S2-H4 IPP80N 04S2-H4, IPI80N04S2-H4 Product Summary V DS R DS(on),max (SMD version) ID 40 V 3.7 mΩ 80 A PG-TO263-3-2 PG-TO2.
Manufacture

Infineon Technologies

Datasheet
Download IPB80N04S2-H4 Datasheet




 IPB80N04S2-H4
OptiMOS® Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Ultra low Rds(on)
• 100% Avalanche tested
• Green product (RoHS compliant)
IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
Product Summary
V DS
R DS(on),max (SMD version)
ID
40 V
3.7 m
80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB80N04S2-H4
IPP80N04S2-H4
IPI80N04S2-0H4
Package
PG-TO263-3-2
PG-TO220-3-1
PG-TO262-3-1
Marking
2N04H4
2N04H4
2N04H4
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=80A
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
80
80
320
660
±20
300
-55 ... +175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 1.1
page 1
2008-02-22




 IPB80N04S2-H4
IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
- - 0.5 K/W
- - 62
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area3)
-
-
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
40
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=250 µA
2.1
3.0
4.0
Zero gate voltage drain current
I DSS
V DS=40 V, V GS=0 V,
T j=25 °C
-
0.01
1 µA
Gate-source leakage current
Drain-source on-state resistance
I GSS
RDS(on)
V DS=40 V, V GS=0 V,
T j=125 °C2)
V GS=20 V, V DS=0 V
V GS=10 V, I D=80 A
-
-
-
1 100
1 100 nA
3.5 4.0 m
V GS=10 V, I D=80 A,
SMD version
-
3.2 3.7
Rev. 1.1
page 2
2008-02-22




 IPB80N04S2-H4
Parameter
Symbol
IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=20 V, V GS=10 V,
I D=80 A, R G=1.3
-
-
-
-
-
-
-
4400
1800
480
23
63
46
22
- pF
-
-
- ns
-
-
-
Gate Charge Characteristics2)
Gate to source charge
Q gs
- 21 29 nC
Gate to drain charge
Gate charge total
Q gd V DD=32 V, I D=80 A,
-
38 70
Q g V GS=0 to 10 V
- 103 148
Gate plateau voltage
V plateau
- 4.9 - V
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
Diode forward voltage
IS
I S,pulse
V SD
T C=25 °C
V GS=0 V, I F=80 A,
T j=25 °C
- - 80 A
- - 320
- 0.9 1.3 V
Reverse recovery time2)
t rr
V R=20 V, I F=I S,
di F/dt =100 A/µs
- 195 - ns
Reverse recovery charge2)
Q rr
V R=20 V, I F=I S,
di F/dt =100 A/µs
- 370 - nC
1) Current is limited by bondwire; with an R thJC = 0.5K/W the chip is able to carry 200A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
2) Defined by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.1
page 3
2008-02-22




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