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Power-Transistor. IPB80N06S3L-06 Datasheet

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Power-Transistor. IPB80N06S3L-06 Datasheet
















IPB80N06S3L-06 Power-Transistor. Datasheet pdf. Equivalent













Part

IPB80N06S3L-06

Description

Power-Transistor



Feature


OptiMOS®-T2 Power-Transistor Features N-channel - Enhancement mode • Aut omotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operat ing temperature • Green product (RoHS compliant) • 100% Avalanche tested IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06 S3L-06 Product Summary V DS R DS(on),m ax (SMD version) ID 55 V 5.6 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO22.
Manufacture

Infineon Technologies

Datasheet
Download IPB80N06S3L-06 Datasheet


Infineon Technologies IPB80N06S3L-06

IPB80N06S3L-06; 0-3-1 Type IPB80N06S3L-06 IPI80N06S3L-0 6 IPP80N06S3L-06 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3N06 L06 3N06L06 3N06L06 Maximum ratings, a t T j=25 °C, unless otherwise specifie d Parameter Symbol Conditions Conti nuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pu lsed drain current2) Avalanche energy, single pulse2) I D,p.


Infineon Technologies IPB80N06S3L-06

ulse E AS T C=25 °C I D=40 A Avalanch e current, single pulse I AS Gate sou rce voltage3) V GS Power dissipation P tot T C=25 °C Operating and storag e temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 80 80 320 455 80 ±16 136 -55 ... +175 55/175/56 Unit A mJ A V W °C Rev. 1.1 page 1 2007-11-07 IPB80N06S3L-06 IPI80N06S3 L-06, IPP80N06S3L-06 .


Infineon Technologies IPB80N06S3L-06

Parameter Symbol Conditions min. Val ues typ. Unit max. Thermal characteri stics2) Thermal resistance, junction - case R thJC Thermal resistance, junct ion ambient, leaded R thJA - - 1.1 K/ W - - 62 SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area4) - - 62 - 40 Electrical charac teristics, at T j=25 °C, unless otherw ise specified Stat.





Part

IPB80N06S3L-06

Description

Power-Transistor



Feature


OptiMOS®-T2 Power-Transistor Features N-channel - Enhancement mode • Aut omotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operat ing temperature • Green product (RoHS compliant) • 100% Avalanche tested IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06 S3L-06 Product Summary V DS R DS(on),m ax (SMD version) ID 55 V 5.6 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO22.
Manufacture

Infineon Technologies

Datasheet
Download IPB80N06S3L-06 Datasheet




 IPB80N06S3L-06
OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
IPB80N06S3L-06
IPI80N06S3L-06, IPP80N06S3L-06
Product Summary
V DS
R DS(on),max (SMD version)
ID
55 V
5.6 m
80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB80N06S3L-06
IPI80N06S3L-06
IPP80N06S3L-06
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
3N06L06
3N06L06
3N06L06
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
Avalanche energy, single pulse2)
I D,pulse
E AS
T C=25 °C
I D=40 A
Avalanche current, single pulse
I AS
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
80
80
320
455
80
±16
136
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.1
page 1
2007-11-07




 IPB80N06S3L-06
IPB80N06S3L-06
IPI80N06S3L-06, IPP80N06S3L-06
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
- - 1.1 K/W
- - 62
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area4)
-
-
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
55
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=80 µA 1.2 1.7 2.2
Zero gate voltage drain current
I DSS
V DS=55 V, V GS=0 V,
T j=25 °C
-
0.01
1 µA
Gate-source leakage current
Drain-source on-state resistance
V DS=55 V, V GS=0 V,
T j=125 °C2)
I GSS
V GS=16 V, V DS=0 V
R DS(on) V GS=5 V, I D=38 A
-
-
-
1 100
1 100 nA
8.3 10.4 m
V GS=5 V, I D=38 A,
SMD version
- 8.0 10.1
V GS=10 V, I D=56 A
- 4.9 5.9
V GS=10 V, I D=56 A,
SMD version
-
4.6 5.6
Rev. 1.1
page 2
2007-11-07




 IPB80N06S3L-06
Parameter
Symbol
IPB80N06S3L-06
IPI80N06S3L-06, IPP80N06S3L-06
Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss - 9417 - pF
C oss
V GS=0 V, V DS=25 V,
f =1 MHz
-
1181
-
Crss - 1127 -
t d(on)
- 20 - ns
tr
V DD=27.5 V,
V GS=10 V, I D=80 A,
-
43
-
t d(off)
R G=3.5
- 55 -
t f - 39 -
Gate Charge Characteristics2)
Gate to source charge
Q gs
- 44 - nC
Gate to drain charge
Gate charge total
Q gd V DD=11 V, I D=80 A,
-
24
-
Q g V GS=0 to 10 V
- 131 196
Gate plateau voltage
V plateau
- 4.4 - V
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
IS
I S,pulse
T C=25 °C
- - 80 A
- - 320
Diode forward voltage
V SD
V GS=0 V, I F=80 A,
T j=25 °C
0.6 0.9 1.3 V
Reverse recovery time2)
Reverse recovery charge2)
t rr V R=27.5 V, I F=I S,
Q rr di F/dt =100 A/µs
- 55 -
- 70 -
1) Current is limited by bondwire; with an R thJC = 1.1 K/W the chip is able to carry 114 A at 25°C. For detailed
information see Application Note ANPS071E
2) Defined by design. Not subject to production test.
ns
nC
3) Qualified at -5V and +16V.
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.1
page 3
2007-11-07




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