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N-Channel MOSFET. FQPF45N15V2 Datasheet

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N-Channel MOSFET. FQPF45N15V2 Datasheet
















FQPF45N15V2 MOSFET. Datasheet pdf. Equivalent













Part

FQPF45N15V2

Description

150V N-Channel MOSFET



Feature


FQP45N15V2/FQPF45N15V2 QFET FQP45N15V2/ FQPF45N15V2 150V N-Channel MOSFET Gener al Description These N-Channel enhancem ent mode power field effect transistors are produced using Fairchild’s propr ietary, planar stripe, DMOS technology. This advanced technology has been espe cially tailored to minimize on-state re sistance, provide superior switching pe rformance, and withs.
Manufacture

Fairchild Semiconductor

Datasheet
Download FQPF45N15V2 Datasheet


Fairchild Semiconductor FQPF45N15V2

FQPF45N15V2; tand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, s ychronous rectification, and other appl ications lowest Rds(on) is required. Features • • • • • • 45A , 150V, RDS(on) = 0.04Ω @VGS = 10 V L ow gate charge ( typical 72 nC) Low Crs s ( typical 135 pF) Fast switching 100% avalanche tested Improved dv/dt .


Fairchild Semiconductor FQPF45N15V2

capability D ! ● ◀ ▲ ● ● G ! G DS TO-220 FQP GD S TO-220F FQPF ! S Absolute Maximum Ratings Symbol VDSS ID www.DataSheet4U.com IDM VGSS EA S IAR EAR dv/dt PD TJ, TSTG TL TC = 25 °C unless otherwise noted Parameter D rain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1 ) FQP45N15V2 45 31 180 FQPF45.


Fairchild Semiconductor FQPF45N15V2

N15V2 150 45 * 31 * 180 * ± 30 Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avala nche Energy Avalanche Current Repetitiv e Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (N ote 2) (Note 1) (Note 1) (Note 3) 1124 45 22 4.5 220 1.47 -55 to +150 300 66 0.44 - Derate above 25°C Operating an d Storage Temperature Ra.





Part

FQPF45N15V2

Description

150V N-Channel MOSFET



Feature


FQP45N15V2/FQPF45N15V2 QFET FQP45N15V2/ FQPF45N15V2 150V N-Channel MOSFET Gener al Description These N-Channel enhancem ent mode power field effect transistors are produced using Fairchild’s propr ietary, planar stripe, DMOS technology. This advanced technology has been espe cially tailored to minimize on-state re sistance, provide superior switching pe rformance, and withs.
Manufacture

Fairchild Semiconductor

Datasheet
Download FQPF45N15V2 Datasheet




 FQPF45N15V2
FQP45N15V2/FQPF45N15V2
150V N-Channel MOSFET
QFET®
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for DC to DC converters, sychronous rectification,
and other applications lowest Rds(on) is required.
Features
• 45A, 150V, RDS(on) = 0.04@VGS = 10 V
• Low gate charge ( typical 72 nC)
• Low Crss ( typical 135 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
!
GDS
TO-220
FQP
GD S
TO-220F
FQPF
G!
◀▲
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
www.DataSheet4U.com
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
FQP45N15V2 FQPF45N15V2
150
45 45 *
31 31 *
180 180 *
± 30
1124
45
22
4.5
220 66
1.47 0.44
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP45N15V2
0.68
0.5
62.5
FQPF45N15V2
2.25
--
62.5
Units
°C/W
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, October 2004




 FQPF45N15V2
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
150 --
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
ID = 250 µA, Referenced to 25°C -- 0.21
IDSS
Zero Gate Voltage Drain Current
VDS = 150 V, VGS = 0 V
VDS = 120 V, TC = 150°C
-- --
-- --
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
-- --
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
-- --
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
2.0 --
4.0
VGS = 10 V, ID = 22.5 A
-- 0.034 0.04
VDS = 40 V, ID = 22.5 A (Note 4) --
40
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 2330 3030
-- 510 670
-- 135 176
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 75 V, ID = 45 A,
RG = 25
-- 22
54
-- 232 474
-- 224 458
(Note 4, 5)
--
246
502
VDS = 120 V, ID = 45 A,
VGS = 10 V
(Note 4, 5)
--
--
--
72
13
31
94
--
--
ns
ns
ns
ns
nC
nC
nC
www.DataSheet4UDI.Scroamin-SoMuarxcime uDmioCdonetinCuhouasraDcratien-rSisoutircces
and
Diode
Maximum Ratings
Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 45 A
trr Reverse Recovery Time
VGS = 0 V, IS = 45 A,
Qrr Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.74mH, IAS = 45A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 45A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
--
--
--
--
--
--
--
--
176
1.19
45
180
1.4
--
--
A
A
V
ns
µC
©2004 Fairchild Semiconductor Corporation
Rev. A, October 2004




 FQPF45N15V2
Typical Characteristics
Top :
VGS
15.0 V
102
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
101
Notes :
1. 250µ s Pulse Test
2. TC = 25
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
0.14
0.12
0.10 VGS = 10V
0.08
0.06
0.04
0.02
0
VGS = 20V
Note : TJ = 25
20 40 60 80 100 120 140 160 180
ID, Drain Current [A]
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Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
6000
5000
4000
3000
2000
1000
0
10-1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
Coss
Crss
Notes ;
1. VGS = 0 V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2004 Fairchild Semiconductor Corporation
102
175oC
25oC
101
-55oC
100
10-1
2
Notes :
1. VDS = 40V
2. 250µs Pulse Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
102
101
100
10-1
0.2
175
25
Notes :
1. VGS = 0V
2. 250µ s Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10 VDS = 30V
VDS = 75V
8 VDS = 120V
6
4
2
Note : ID = 45A
0
0 10 20 30 40 50 60 70 80
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, October 2004




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