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Planar Transistor. 2SA1235A Datasheet

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Planar Transistor. 2SA1235A Datasheet
















2SA1235A Transistor. Datasheet pdf. Equivalent













Part

2SA1235A

Description

Silicon Epitaxial Planar Transistor



Feature


BL Galaxy Electrical Silicon Epitaxial P lanar Transistor FEATURES z Small colle ctor to emitter saturation voltage VCE( sat)=-0.3V max(@IC=-100mA,IB=-10mA). z z Excellent lineary DC forward current gain. Super mini package for easy mount ing. Production specification 2SA1235 A Pb Lead-free APPLICATIONS z z PNP e pitaxial type transistor designed for l ow frequency. Volt.
Manufacture

Galaxy Semi-Conductor

Datasheet
Download 2SA1235A Datasheet


Galaxy Semi-Conductor 2SA1235A

2SA1235A; age amplify application. SOT-23 ORDERIN G INFORMATION Type No. 2SA1235A Marking ME/MF/MG Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise spec ified Symbol VCBO VCEO VEBO IC PC Tj,Ts tg Parameter Collector-Base Voltage Col lector-Emitter Voltage Emitter-Base Vol tage Collector Current -Continuous Coll ector Dissipation Junction and Storage Temperature Value -5.


Galaxy Semi-Conductor 2SA1235A

0 -50 -6 -200 150 -55~125 Units V V V mA mW ℃ www.DataSheet4U.com Document number: BL/SSSTC094 Rev.A www.galaxycn .com 1 BL Galaxy Electrical Silicon Ep itaxial Planar Transistor Production s pecification 2SA1235A ELECTRICAL CHAR ACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Collector-base bre akdown voltage Collector-emitter breakd own voltage Emitter-ba.


Galaxy Semi-Conductor 2SA1235A

se breakdown voltage Collector cut-off c urrent Emitter cut-off current DC curre nt gain Collector-emitter saturation vo ltage Transition frequency Collector ou tput capacitance Noise figure Symbol V( BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob NF Test conditions IC=- 100μA,IE=0 IC=-1mA,IB=0 IE=-100μA,IC= 0 VCB=-50V,IE=0 VEB=-6V,IC=0 VCE=-6V,IC =-1mA VCE=-6V,IC=-0..




Part

2SA1235A

Description

Silicon Epitaxial Planar Transistor



Feature


BL Galaxy Electrical Silicon Epitaxial P lanar Transistor FEATURES z Small colle ctor to emitter saturation voltage VCE( sat)=-0.3V max(@IC=-100mA,IB=-10mA). z z Excellent lineary DC forward current gain. Super mini package for easy mount ing. Production specification 2SA1235 A Pb Lead-free APPLICATIONS z z PNP e pitaxial type transistor designed for l ow frequency. Volt.
Manufacture

Galaxy Semi-Conductor

Datasheet
Download 2SA1235A Datasheet




 2SA1235A
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
FEATURES
z Small collector to emitter saturation voltage
VCE(sat)=-0.3V max(@IC=-100mA,IB=-10mA).
Pb
Lead-free
z Excellent lineary DC forward current gain.
z Super mini package for easy mounting.
2SA1235A
APPLICATIONS
z PNP epitaxial type transistor designed for low frequency.
z Voltage amplify application.
ORDERING INFORMATION
Type No.
Marking
2SA1235A
ME/MF/MG
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-50
VCEO
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VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
-50
-6
IC Collector Current -Continuous
-200
PC Collector Dissipation
150
Tj,Tstg
Junction and Storage Temperature
-55~125
Units
V
V
V
mA
mW
Document number: BL/SSSTC094
Rev.A
www.galaxycn.com
1




 2SA1235A
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SA1235A
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0
-50
V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO IE=-100μA,IC=0
-6
V
Collector cut-off current
ICBO VCB=-50V,IE=0
-0.1 μA
Emitter cut-off current
IEBO VEB=-6V,IC=0
-0.1 μA
DC current gain
hFE
VCE=-6V,IC=-1mA
VCE=-6V,IC=-0.1mA
150
90
800
Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA
-0.3 V
Transition frequency
Collector output capacitance
Noise figure
fT VCE=-6V, IC=-10mA
Cob VCB=-6V,IE=0,f=1MHz
NF
VCE=-6V,IE=0.3mA,
f=100MHz,RG=10k
200
4
20
MHz
pF
dB
www.DataCShLeAet4SUS.cIoFmICATION OF hFE(1)
Rank
E
F
G
Range
Marking
150-300
ME
250-500
MF
400-800
MG
Document number: BL/SSSTC094
Rev.A
www.galaxycn.com
2




 2SA1235A
BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
PACKAGE OUTLINE
Plastic surface mounted package
A
E
KB
D
G
J
H
C
SOLDERING FOOTPRINT
Production specification
2SA1235A
SOT-23
SOT-23
Dim Min Max
A 2.85 2.95
B 1.25 1.35
C 1.0Typical
D 0.37 0.43
E 0.35 0.48
G 1.85 1.95
H 0.02 0.1
J 0.1Typical
K 2.35 2.45
All Dimensions in mm
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Unit : mm
PACKAGE INFORMATION
Device
Package
Shipping
2SA1235A SOT-23
3000/Tape&Reel
Document number: BL/SSSTC094
Rev.A
www.galaxycn.com
3




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