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AP9971GM. 9971GM Datasheet

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AP9971GM. 9971GM Datasheet
















9971GM AP9971GM. Datasheet pdf. Equivalent













Part

9971GM

Description

AP9971GM



Feature


AP9971GM RoHS-compliant Product Advance d Power Electronics Corp. ▼ Low On-re sistance ▼ Single Drive Requirement Surface Mount Package D1 G2 S2 D2 D2 D1 N-CHANNEL ENHANCEMENT MODE POWER M OSFET BVDSS RDS(ON) ID 60V 50mΩ 5A D 2 SO-8 S1 G1 Description Advanced P ower MOSFETs from APEC provide the desi gner with the best combination of fast switching, ruggedized dev.
Manufacture

Advanced Power Electronics

Datasheet
Download 9971GM Datasheet


Advanced Power Electronics 9971GM

9971GM; ice design, ultra low on-resistance and cost-effectiveness. G1 D1 G2 S1 S2 A bsolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ www.DataSheet4U.com Parame ter Drain-Source Voltage Gate-Source Vo ltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current , VGS @ 10 V Pulsed Drain Current 1,2 3 Rating 60 +25 5 3.2 30 2 0.016 -55 to 150 -55 to 150 Units V V A A .


Advanced Power Electronics 9971GM

A W W/ ℃ ℃ ℃ ID@TA=100℃ IDM PD@ TA=25℃ TSTG TJ Total Power Dissipati on Linear Derating Factor Storage Tempe rature Range Operating Junction Tempera ture Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, J unction-ambient 3 Value 62.5 Unit ℃ /W Data and specifications subject to change without notice 1 200811042 AP9 971GM Electrical Characteristi.


Advanced Power Electronics 9971GM

cs@Tj=25oC(unless otherwise specified) S ymbol BVDSS ΔBVDSS/ΔTj Parameter Dra in-Source Breakdown Voltage Static Drai n-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain- Source Leakage Current o Test Conditio ns VGS=0V, ID=250uA VGS=10V, ID=5A VGS= 4.5V, ID=2.5A VDS=VGS, ID=250uA VDS=10V , ID=5A VDS=60V, VGS=0V VGS= +25V ID=5A VDS=48V VGS=10V VDS.




Part

9971GM

Description

AP9971GM



Feature


AP9971GM RoHS-compliant Product Advance d Power Electronics Corp. ▼ Low On-re sistance ▼ Single Drive Requirement Surface Mount Package D1 G2 S2 D2 D2 D1 N-CHANNEL ENHANCEMENT MODE POWER M OSFET BVDSS RDS(ON) ID 60V 50mΩ 5A D 2 SO-8 S1 G1 Description Advanced P ower MOSFETs from APEC provide the desi gner with the best combination of fast switching, ruggedized dev.
Manufacture

Advanced Power Electronics

Datasheet
Download 9971GM Datasheet




 9971GM
Advanced Power
Electronics Corp.
AP9971GM
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
Single Drive Requirement
Surface Mount Package
Description
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BVDSS
RDS(ON)
ID
60V
50mΩ
5A
D1 D2
G1 G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
www.DataSIDh@eetT4AU=.c1o0m0
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS @ 10V
Continuous Drain Current3, VGS @ 10V
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Rating
60
+25
5
3.2
30
2
0.016
-55 to 150
-55 to 150
Value
62.5
Units
V
V
A
A
A
W
W/
Unit
/W
Data and specifications subject to change without notice
1
200811042




 9971GM
AP9971GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=5A
VGS=4.5V, ID=2.5A
Gate Threshold Voltage
Forward Transconductance
VDS=VGS, ID=250uA
VDS=10V, ID=5A
Drain-Source Leakage Current
VDS=60V, VGS=0V
Drain-Source Leakage Current (Tj=70oC) VDS=48V ,VGS=0V
Gate-Source Leakage
VGS= +25V
Total Gate Charge2
ID=5A
Gate-Source Charge
VDS=48V
Gate-Drain ("Miller") Charge
VGS=10V
Turn-on Delay Time2
VDS=30V
Rise Time
ID=5A
Turn-off Delay Time
RG=3.3Ω,VGS=10V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=6Ω
VGS=0V
VDS=25V
f=1.0MHz
60 - - V
- 0.06 - V/
- - 50 m
- - 60 m
1 - 3V
- 16 - S
- - 1 uA
- - 25 uA
- - +100 nA
- 32.5 - nC
- 4.9 - nC
- 8.8 - nC
- 9.6 - ns
- 10 - ns
- 30 - ns
- 5.5 -
- 1658 -
ns
pF
- 156 -
- 109 -
pF
pF
www.DSataoSuherect4Ue.c-oDmrain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=1.6A, VGS=0V
IS=5A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 29.2 -
ns
- 48 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2




 9971GM
35
T A =25 o C
30
25
10V
6.0V
4.5V
20
15
10
V G =3.0V
5
0
01234
V DS , Drain-to-Source Voltage (V)
5
Fig 1. Typical Output Characteristics
55
I D =5A
50 T A =25 o C
45
40
35
30
1 2 3 4 5 6 7 8 9 10 11
www.DataSheet4U.com
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
100
10
T j =150 o C
1
T j =25 o C
0.1
0.01
0.1
0.3 0.5 0.7 0.9 1.1 1.3
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
AP9971GM
35
30 T A =150 o C
25
10V
6.0V
4.5V
20
15
10 V G =3.0V
5
0
012345
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.4
I D =5A
V G =10V
2.0
1.6
1.2
0.8
0.4
0.0
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.8
150
2.4
2
1.6
1.2
0.8
0.4
-50
0
50 100
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3




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