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MODULE 512KByte. HMS12832M4V Datasheet

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MODULE 512KByte. HMS12832M4V Datasheet






HMS12832M4V 512KByte. Datasheet pdf. Equivalent




HMS12832M4V 512KByte. Datasheet pdf. Equivalent





Part

HMS12832M4V

Description

SRAM MODULE 512KByte



Feature


HANBit HMS12832M4V SRAM MODULE 512KByte (128K x 32-Bit) 3.3V, 64Pin-SIMM Part No. HMS12832M4V GENERAL DESCRIPTION Th e HMS12832M4V is a high-speed static ra ndom access memory (SRAM) module contai ning 131,072 words organized in a x32-b it configuration. The module consists o f four 128K x 8 SRAMs mounted on a 64-p in, single-sided, FR4-printed circuit b oard. PD0 and PD1 .
Manufacture

Hanbit Electronics

Datasheet
Download HMS12832M4V Datasheet


Hanbit Electronics HMS12832M4V

HMS12832M4V; identify the module’s density allowing interchangeable use of alternate densi ty, industry- standard modules. Four ch ip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module’ s 4 bytes independently. Output enable( /OE) and write enable(/WE) can set the memory input and output. Data is writte n into the SRAM memory when write enabl e (/WE) and chip enabl.


Hanbit Electronics HMS12832M4V

e (/CE) inputs are both LOW. accomplishe d when /WE remains HIGH and /CE and out put enable (/OE) are LOW. For reliabili ty, this SRAM module is designed as mul tiple power and ground pin. All module components may be powered from a single +3.3V DC power supply and all inputs a nd outputs are fully TTL-compatible. Re ading is FEATURES w Access times : 8, 10, 12, 15 and 20n.


Hanbit Electronics HMS12832M4V

s w High-density 512KByte design w High- reliability, high-speed design w Single + 3.3V ±0.3V power supply w Easy memo ry expansion with /CE and /OE functions w All inputs and outputs are TTL-compa tible w Industry-standard pinout w FR4- PCB design PIN ASSIGNMENT PIN SYMBOL P IN SYMBOL PIN SYMBOL PIN SYMBOL 1 2 3 4 5 6 7 8 Vss NC NC DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 Vcc A.

Part

HMS12832M4V

Description

SRAM MODULE 512KByte



Feature


HANBit HMS12832M4V SRAM MODULE 512KByte (128K x 32-Bit) 3.3V, 64Pin-SIMM Part No. HMS12832M4V GENERAL DESCRIPTION Th e HMS12832M4V is a high-speed static ra ndom access memory (SRAM) module contai ning 131,072 words organized in a x32-b it configuration. The module consists o f four 128K x 8 SRAMs mounted on a 64-p in, single-sided, FR4-printed circuit b oard. PD0 and PD1 .
Manufacture

Hanbit Electronics

Datasheet
Download HMS12832M4V Datasheet




 HMS12832M4V
HANBit
HMS12832M4V
SRAM MODULE 512KByte (128K x 32-Bit) 3.3V, 64Pin-SIMM
Part No. HMS12832M4V
GENERAL DESCRIPTION
The HMS12832M4V is a high-speed static random access memory (SRAM) module containing 131,072 words organized in
a x32-bit configuration. The module consists of four 128K x 8 SRAMs mounted on a 64-pin, single-sided, FR4-printed circuit
board.
PD0 and PD1 identify the modules density allowing interchangeable use of alternate density, industry- standard modules. Four
chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the modules 4 bytes independently. Output enable(/OE)
and write enable(/WE) can set the memory input and output.
Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is
accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.
For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be powered from
a single +3.3V DC power supply and all inputs and outputs are fully TTL-compatible.
FEATURES
w Access times : 8, 10, 12, 15 and 20ns
w High-density 512KByte design
w High-reliability, high-speed design
w Single + 3.3V ±0.3V power supply
w Easy memory expansion with /CE and /OE functions
w All inputs and outputs are TTL-compatible
w Industry-standard pinout
w FR4-PCB design
wwwO.DaPtaTSIhOeeNt4US.com
w Timing
8ns access
10ns access
12ns access
15ns access
20ns access
w Packages
64-pin SIMM
MARKING
-8
-10
-12
-15
-20
M
PIN ASSIGNMENT
PIN SYMBOL PIN SYMBOL PIN SYMBOL PIN SYMBOL
1 Vss 17 A2 33 /CE4 49 A4
2 NC 18 A9 34 /CE3 50 A11
3 NC 19 DQ12 35 NC 51 A5
4 DQ0 20 DQ4 36 A16 52 A12
5 DQ8 21 DQ13 37 /OE 53 Vcc
6 DQ1 22 DQ5 38 Vss 54 A13
7 DQ9 23 DQ14 39 DQ24 55 A6
8 DQ2 24 DQ6 40 DQ16 56 DQ20
9 DQ10 25 DQ15 41 DQ25 57 DQ28
10 DQ3 26 DQ7 42 DQ17 58 DQ21
11 DQ11 27 Vss 43 DQ26 59 DQ29
12 Vcc 28 /WE 44 DQ18 60 DQ22
13 A0 29 A15 45 DQ27 61 DQ30
14 A7 30 A14 46 DQ19 62 DQ23
15 A1 31 /CE2 47 A3 63 DQ31
16 A8 32 /CE1 48 A10 64 Vss
SIMM
TOP VIEW
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002).
1 HANBit Electronics Co.,Ltd.




 HMS12832M4V
HANBit
FUNCTIONAL BLOCK DIAGRAM
DQ0 - DQ31
A0 - A16
32
17
/CE1
/CE2
/CE3
www.DataSheet4U.com /WE
/OE
/CE4
A0-16
DQ 0-7
/WE
/OE U1
/CE
A0-16
DQ 8-15
/WE
/OE U2
/CE
A0-16
DQ16-23
/WE
/OE U3
/CE
A0-16
DQ24-31
/WE
/OE U4
/CE
HMS12832M4V
PRESENCE-DETECT
PD0 = Open
PD1 = Open
TRUTH TABLE
MODE
STANDBY
NOT SELECTED
READ
WRITE
/OE /CE /WE
DQ
X H X HIGH-Z
H L H HIGH-Z
L L H Dout
X L L Din
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002).
2 HANBit Electronics Co.,Ltd.




 HMS12832M4V
HANBit
HMS12832M4V
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
SYMBOL
RATING
Voltage on Any Pin Relative to Vss
VIN,OUT
-0.5V to 4.6V
Voltage on Vcc Supply Relative to Vss
VCC
-0.5V to 4.6V
Power Dissipation
PD 4.0W
Storage Temperature
TSTG
-65oC to +150oC
Operating Temperature
TA 0oC to +70oC
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS ( TA=0 to 70 o C )
PARAMETER
SYMBOL
MIN
TYP.
Supply Voltage
VCC
3.0V
3.3V
Ground
VSS 0 0
Input High Voltage
VIH 2.2 -
Input Low Voltage
VIL
* VIL(Min.) = -2.0V ac (Pulse Width 10ns) for I 20 mA
** VIH(Min.) = Vcc+2.0V ac (Pulse Width 10ns) for I 20 mA
-0.5*
-
MAX
3.6V
0
Vcc+0.5V**
0.8V
DC AND OPERATING CHARACTERISTICS (1)(0oC TA 70 oC ; Vcc = 3.3V ± 10% )
PARAMETER
TEST CONDITIONS
SYMBOL MIN MAX
UNITS
Input Leakage Current
VIN=Vss to Vcc
ILI -8 8
µA
www.DOatuatSphueteLte4Uak.caogme Current
Output High Voltage
Output Low Voltage
* Vcc=3.3V, Temp=25 oC
/CE=VIH or /OE =VIH or /WE=VIL
VOUT=Vss to VCC
IOH = -4.0mA
IOL = 8.0mA
IL0 -8 8
VOH 2.4
VOL 0.4
µA
V
V
DC AND OPERATING CHARACTERISTICS (2)
DESCRIPTION
TEST CONDITIONS
MAX
SYMBOL
-8 -10 -12
Power Supply
Current:Operating
Min. Cycle, 100% Duty
/CE=VIL, VIN=VIH or VIL,
IOUT=0mA
ICC 640 620 600
Power Supply
Current:Standby
Min. Cycle, /CE=VIH
f=0MHZ, /CEVCC-0.2V,
VINVCC-0.2V or VIN0.2V
ISB 200 200 200
ISB1 20 20 20
UNIT
mA
mA
mA
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002).
3 HANBit Electronics Co.,Ltd.



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