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MODULE 4Mbyte. HMS1M32M8G Datasheet

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MODULE 4Mbyte. HMS1M32M8G Datasheet






HMS1M32M8G 4Mbyte. Datasheet pdf. Equivalent




HMS1M32M8G 4Mbyte. Datasheet pdf. Equivalent





Part

HMS1M32M8G

Description

SRAM MODULE 4Mbyte



Feature


HANBit HAN BIT HMS1M32M8G/Z8 SRAM MODU LE 4Mbyte(1M x 32-Bit) Part No. HMS1M3 2M8G, HMS1M32Z8 GENERAL DESCRIPTION Th e HMS1M32M8G/Z8 is a high-speed static random access memory (SRAM) module cont aining 1,048,576 words organized in a x 32-bit configuration. The module consis ts of eight 1M x 4 SRAMs mounted on a 7 2-pin, double-sided, FR4-printed circui t board. PD0 to PD.
Manufacture

Hanbit Electronics

Datasheet
Download HMS1M32M8G Datasheet


Hanbit Electronics HMS1M32M8G

HMS1M32M8G; 3 identify the module’s density allowi ng interchangeable use of alternate den sity, industry- standard modules. Eight chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module ’s 4 bytes independently. Output enab le(/OE) and write enable(/WE) can set t he memory input and output. Data is wri tten into the SRAM memory when write en able (/WE) and chip en.


Hanbit Electronics HMS1M32M8G

able (/CE) inputs are both LOW. Reading is accomplished when /WE remains HIGH a nd /CE and output enable (/OE) are LOW. For reliability, this SRAM module is d esigned as multiple power and ground pi n. All module components may be powered from a single +5V DC power supply and all inputs and outputs are fully TTL-co mpatible. FEATURES Š Access times : 1 0, 12, 15, 17 and 2.


Hanbit Electronics HMS1M32M8G

0ns Š High-density 4MByte design Š Hig h-reliability, high-speed design Š Sin gle + 5V ±10% power supply Š Easy mem ory expansion /CE and /OE functions Š All inputs and outputs are TTL-compatib le Š Industry-standard pinout Š FR4-P CB design www.DataSheet4U.com Š Low pr ofile 72-pin Š Part identification - H MS1M32M8G : SIMM design, Gold Plate Lea d - HMS1M32Z8 : ZIP design →.

Part

HMS1M32M8G

Description

SRAM MODULE 4Mbyte



Feature


HANBit HAN BIT HMS1M32M8G/Z8 SRAM MODU LE 4Mbyte(1M x 32-Bit) Part No. HMS1M3 2M8G, HMS1M32Z8 GENERAL DESCRIPTION Th e HMS1M32M8G/Z8 is a high-speed static random access memory (SRAM) module cont aining 1,048,576 words organized in a x 32-bit configuration. The module consis ts of eight 1M x 4 SRAMs mounted on a 7 2-pin, double-sided, FR4-printed circui t board. PD0 to PD.
Manufacture

Hanbit Electronics

Datasheet
Download HMS1M32M8G Datasheet




 HMS1M32M8G
HANBit
HMS1M32M8G/Z8
HAN
BI T
SRAM MODULE 4Mbyte(1M x 32-Bit)
Part No. HMS1M32M8G, HMS1M32Z8
GENERAL DESCRIPTION
The HMS1M32M8G/Z8 is a high-speed static random access memory (SRAM) module containing 1,048,576
words organized in a x32-bit configuration. The module consists of eight 1M x 4 SRAMs mounted on a 72-pin,
double-sided, FR4-printed circuit board.
PD0 to PD3 identify the module’s density allowing interchangeable use of alternate density, industry- standard
modules. Eight chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module’s 4 bytes
independently. Output enable(/OE) and write enable(/WE) can set the memory input and output.
Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW.
Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.
For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be
powered from a single +5V DC power supply and all inputs and outputs are fully TTL-compatible.
FEATURES
Š Access times : 10, 12, 15, 17 and 20ns
PIN ASSIGNMENT
Š High-density 4MByte design
Š High-reliability, high-speed design
NC 2
PD3 4
PD0 6
Š Single + 5V ±10% power supply
DQ0 8
DQ1 10
Š Easy memory expansion /CE and /OE functions
Š All inputs and outputs are TTL-compatible
DQ2 12
DQ3 14
Vcc 16
Š Industry-standard pinout
A7 18
A8 20
Š FR4-PCB design
A9 22
wwwŠ.DaLtaoSwhepert4oUfi.lceom72-pin
DQ4 24
DQ5 26
Š Part identification
DQ6 28
DQ7 30
- HMS1M32M8G : SIMM design, Gold Plate Lead /WE 32
- HMS1M32Z8 : ZIP design
A14 34
/CE1 36
The both are pin-to-pin compatible
/CE3 38
A16 40
OPTIONS
MARKING
Vss 42
Š Timing
DQ16 44
DQ17 46
10ns access
-10
DQ18 48
DQ19 50
12ns access
-12
A10 52
A11 54
15ns access
-15
A12 56
A13 58
17ns access
-17
DQ20 60
20ns access
-20
DQ21 62
DQ22 64
Š Packages
DQ23 66
Vss 68
72-pin SIMM
M
A19 70
72-pin ZIP
Z
NC 72
1 NC
3 PD2
5 Vss
7 PD1
9 DQ8
11 DQ9
13 DQ10
15 DQ11
17 A0
19 A1
21 A2
23 DQ12
25 DQ13
27 DQ14
29 DQ15
31 Vss
33 A15
35 /CE2
37 /CE4
39 A17
41 /OE
43 DQ24
45 DQ25
47 DQ26
49 DQ27
51 A3
53 A4
55 A5
57 Vcc
59 A6
61 DQ28
63 DQ29
65 DQ30
67 DQ31
69 A18
71 NC
PD0 - Vss
PD1 - Open
PD2 - Vss
PD3 - Open
72-Pin ZIP
TOP VIEW
1 HANBit Electronics Co.,Ltd.




 HMS1M32M8G
HANBit
FUNCTIONAL BLOCK DIAGRAM
DQ0 - DQ31
A0 - A19
32
20
/CE1
A0-19
DQ 0-3
/WE
/OE U1
/CE
/CE2
A0-19
DQ 8-11
/WE
/OE U2
/CE
A0-19
/WE DQ16-19
/OE
U3
/CE3
/CE
/WE
www.DataSheet4U/.OcoEm
/CE4
A0-19
DQ24-27
/WE
/OE U4
/CE
HMS1M32M8G/Z8
A0-19
DQ 4-7
/WE
/OE U5
/CE
A0-19
DQ12-15
/WE
/OE U6
/CE
A0-19
/WE DQ20-23
/OE
U7
/CE
A0-19
DQ28-31
/WE
/OE U8
/CE
TRUTH TABLE
MODE
STANDBY
NOT SELECTED
READ
WRITE
/OE /CE /WE OUTPUT
X H X HIGH-Z
H L H HIGH-Z
L LH
X LL
DOUT
DIN
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
2 HANBit Electronics Co.,Ltd.




 HMS1M32M8G
HANBit
HMS1M32M8G/Z8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
Voltage on Any Pin Relative to Vss
VIN,OUT
-0.5V to +7.0V
Voltage on Vcc Supply Relative to Vss
VCC
-0.5V to +7.0V
Power Dissipation
PD 8W
Storage Temperature
TSTG -65oC to +150oC
Operating Temperature
TA 0oC to +70oC
Š Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS ( TA=0 to 70 o C )
PARAMETER
SYMBOL
MIN
TYP.
Supply Voltage
VCC
4.5V
5.0V
Ground
VSS 0 0
Input High Voltage
VIH 2.2 -
Input Low Voltage
VIL -0.5* -
* VIL(Min.) = -2.0V ac (Pulse Width 10ns) for I 20 mA
** VIH(Min.) = Vcc+2.0V ac (Pulse Width 10ns) for I 20 mA
MAX
5.5V
0
Vcc+0.5V**
0.8V
DC AND OPERATING CHARACTERISTICS (1)(0oC TA 70 oC ; Vcc = 5V ± 0.5V )
PARAMETER
www.DIantpaSutheLeet4aUka.cgoemCurrent
Output Leakage Current
Output High Voltage
Output Low Voltage
* Vcc=5.0V, Temp=25 oC
TEST CONDITIONS
VIN =Vss to Vcc
/CE=VIH or /OE =VIH or /WE=VIL
VOUT=Vss to VCC
IOH = -4.0Ma
IOL = 8.0Ma
SYMBO
L
ILI
MIN
-2
MAX
2
IL0 -2 2
VOH 2.4
VOL 0.4
UNITS
µA
µA
V
V
DC AND OPERATING CHARACTERISTICS (2)
MAX
DESCRIPTION
Power Supply
Current: Operating
Power Supply
Current :Standby
CONDITIONS
Min. Cycle, 100% Duty
/CE=VIL, VIN=VIH or VIL,
IOUT=0mA
Min. Cycle, /CE=VIH
f=0MHZ, /CEVCC-0.2V,
VINVCC-0.2V or VIN0.2V
SYMBOL -10 -12 -15
lCC 195 190 185
lSB 50 50 50
lSB1 10 10 10
UNIT
mA
mA
mA
3 HANBit Electronics Co.,Ltd.



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