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MODULE 4Mbyte. HMS1M32M8L Datasheet

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MODULE 4Mbyte. HMS1M32M8L Datasheet






HMS1M32M8L 4Mbyte. Datasheet pdf. Equivalent




HMS1M32M8L 4Mbyte. Datasheet pdf. Equivalent





Part

HMS1M32M8L

Description

SRAM MODULE 4Mbyte



Feature


HANBit HMS1M32M8L SRAM MODULE 4Mbyte(1M x32Bit) ,LOW POWER,72Pin SIMM,5V Part N o. HMS1M32M8L, HMS1M32Z8L GENERAL DESC RIPTION The HMS1M32M8L is a static rand om access memory (SRAM) module containi ng 1,048,576 bits organized in a x32-bi t configuration. The module consists of eight 512K x 8 SRAMs mounted on a 72-p in, double-sided, FR4-printed circuit b oard. The HMS1M32M.
Manufacture

Hanbit Electronics

Datasheet
Download HMS1M32M8L Datasheet


Hanbit Electronics HMS1M32M8L

HMS1M32M8L; 8L also support low data retention volta ge for battery back-up operations with low data retention current. Eight chip enable inputs, (/CE_UU1, /CE_UM1, /CE_L M1, /CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2, /CE_LL2) are used to enable the module ’s 4M bytes independently. Output ena ble(/OE) and write enable(/WE) can set the memory input and output. Data is wr itten into the SRAM .


Hanbit Electronics HMS1M32M8L

memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. accom plished when /WE remains HIGH and /CE a nd output enable (/OE) are LOW. For rel iability, this SRAM module is designed as multiple power and ground pin. All m odule components may be powered from a single +5V DC power supply and all inpu ts and outputs are fully TTL-compatible . Reading is FEAT.


Hanbit Electronics HMS1M32M8L

URES w Part identification - HMS1M32M8L : SIMM design - HMS1M32Z8L : ZIP design The both are Pin to Pin Compatible w A ccess times : 55ns, 70ns w High-density 4MByte design w High-reliability, low- power design w Single + 5V ±0.5V power supply w Low data retention voltage : 2V(min) w Three state output and TTL-co mpatible w FR4-PCB design www.DataSheet 4U.com PIN ASSIGNM.

Part

HMS1M32M8L

Description

SRAM MODULE 4Mbyte



Feature


HANBit HMS1M32M8L SRAM MODULE 4Mbyte(1M x32Bit) ,LOW POWER,72Pin SIMM,5V Part N o. HMS1M32M8L, HMS1M32Z8L GENERAL DESC RIPTION The HMS1M32M8L is a static rand om access memory (SRAM) module containi ng 1,048,576 bits organized in a x32-bi t configuration. The module consists of eight 512K x 8 SRAMs mounted on a 72-p in, double-sided, FR4-printed circuit b oard. The HMS1M32M.
Manufacture

Hanbit Electronics

Datasheet
Download HMS1M32M8L Datasheet




 HMS1M32M8L
HANBit
HMS1M32M8L
SRAM MODULE 4Mbyte(1Mx32Bit) ,LOW POWER,72Pin SIMM,5V
Part No. HMS1M32M8L, HMS1M32Z8L
GENERAL DESCRIPTION
The HMS1M32M8L is a static random access memory (SRAM) module containing 1,048,576 bits organized in a x32-bit
configuration. The module consists of eight 512K x 8 SRAMs mounted on a 72-pin, double-sided, FR4-printed circuit board.
The HMS1M32M8L also support low data retention voltage for battery back-up operations with low data retention current. Eight
chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2, /CE_LL2) are used to enable
the modules 4M bytes independently. Output enable(/OE) and write enable(/WE) can set the memory input and output.
Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is
accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.
For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be powered from
a single +5V DC power supply and all inputs and outputs are fully TTL-compatible.
FEATURES
w Part identification
- HMS1M32M8L : SIMM design
- HMS1M32Z8L : ZIP design
The both are Pin to Pin Compatible
w Access times : 55ns, 70ns
w High-density 4MByte design
w High-reliability, low-power design
w Single + 5V ±0.5V power supply
w Low data retention voltage : 2V(min)
w Three state output and TTL-compatible
w FR4-PCB design
w Low profile 72-Pin SIMM
www.DataSheet4U.com
OPTIONS
w Timing
55ns access
70ns access
w Packages
72-pin SIMM
72-pin ZIP
MARKING
-55
-70
M
Z
PIN ASSIGNMENT
PIN SYMBOL PIN SYMBOL PIN SYMBOL
1 Vss 25 Vcc 49 DQ17
2 A3 26 DQ8 50 DQ18
3 A2 27 DQ9 51 DQ22
4 A1 28 DQ10 52 DQ21
5
A0
29 /CE_LM2 53
DQ20
6 Vcc 30 Vcc 54 DQ19
7 A11 31 /CE_LM1 55 Vcc
8 /OE 32 DQ15 56 A14
9 A10 33 DQ14 57 A12
10 Vcc 34 DQ13 58
A7
11 /CE_LL2 35
12 /CE_LL1 36
DQ12
DQ11
59
60
Vcc
A8
13 DQ7 37 A18 61
A9
14 DQ0 38 A16 62 DQ24
15 DQ1 39 Vss 63 DQ25
16 DQ2 40 A6 64 DQ26
17 DQ6 41 Vcc 65 /CE_UU2
18 DQ5 42 A5 66 /CE_UU1
19 DQ4 43 A4 67 DQ31
20 DQ3 44 Vcc 68 DQ30
21
A15
45 /CE_UM2 69
DQ29
22
A17
46 /CE_UM1 70
DQ28
23 /WE 47 DQ23 71 DQ27
24 A13 48 DQ16 72
Vss
SIMM
TOP VIEW
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002)
1 HANBit Electronics Co.,Ltd.




 HMS1M32M8L
HANBit
FUNCTIONAL BLOCK DIAGRAM
DQ 0-DQ31
A0-A18
32
19
/CE-UU1
/CE-UM1
/CE-LM1
www.DataSheet4U.com
/OE
/CE-LL1
A0-18
DQ24-31
/WE
/OE U4
/CE
A0-18
DQ16-23
/WE
/OE U3
/CE
A0-18
DQ 8-15
/WE
/OE U2
/CE
A0-18
DQ 0-7
/WE
/OE U1
/CE
/CE-UU2
/CE-UM2
/CE-LM2
/WE
/OE
/CE-LL2
HMS1M32M8L
A0-18
DQ24-31
/WE
/OE U8
/CE
A0-18
DQ16-23
/WE
/OE U7
/CE
A0-18
DQ 8-15
/WE
/OE U6
/CE
A0-18
DQ 0-7
/WE
/OE U5
/CE
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002)
2 HANBit Electronics Co.,Ltd.




 HMS1M32M8L
HANBit
TRUTH TABLE
MODE
STANDBY
NOT SELECTED
READ
WRITE or ERASE
NOTE: X means dont care
HMS1M32M8L
/OE /CE /WE
X HX
H LH
L LH
XLL
DQ
HIGH-Z
HIGH-Z
Q
D
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
Voltage on Any Pin Relative to Vss
VIN,OUT
-0.5V to +7.0V
Voltage on Vcc Supply Relative to Vss
VCC
-0.5V to +7.0V
Power Dissipation
PD 8W
Storage Temperature
TSTG
-65oC to +150oC
Operating Temperature
TA 0oC to +70oC
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS ( TA=0 to 70 o C )
PARAMETER
SYMBOL
MIN
TYP.
Supply Voltage
www.DGartaoSuhnedet4U.com
VCC
4.5V
5.0V
VSS 0 0
Input High Voltage
VIH 2.2 -
Input Low Voltage
VIL
* VIL(Min.) = -2.0V (Pulse Width 10ns) for I 20 mA
** VIH(Min.) = Vcc+2.0V (Pulse Width 10ns) for I 20 mA
-0.5*
-
MAX
5.5V
0
Vcc+0.5V**
0.8V
DC AND OPERATING CHARACTERISTICS (1)
(0oC TA 70 oC ; Vcc = 5V ± 0.5V )
PARAMETER
TEST CONDITIONS
Input Leakage Current
VIN = Vss to Vcc
Output Leakage Current
Output High Voltage
Output Low Voltage
* Vcc=5.0V, Temp=25 oC
/CE=VIH or /OE =VIH or /WE=VIL
VOUT=Vss to VCC
IOH = -4.0mA
IOL = 8.0mA
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002)
3
SYMBOL MIN MAX
ILI -32 32
IL0 -32 32
VOH 2.4
VOL 0.4
UNITS
µA
µA
V
V
HANBit Electronics Co.,Ltd.



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