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Type Transistor. 2SC5827 Datasheet

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Type Transistor. 2SC5827 Datasheet






2SC5827 Transistor. Datasheet pdf. Equivalent




2SC5827 Transistor. Datasheet pdf. Equivalent





Part

2SC5827

Description

Silicon NPN Epitaxial Type Transistor



Feature


2SC5827 Silicon NPN Epitaxial VHF/UHF wi de band amplifier ADE–208–1464(Z) Rev.0 Nov. 2001 Features • Super comp act package: MFPAK (1.4 x 0.8 x 0.59 mm ) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is WW–”. www.DataSheet4U.com 2SC5827 Absolute Maximum Ratings (Ta = 25 °C) Item Collector to base voltage Collect or to emitter voltage Emitter t.
Manufacture

Hitachi Semiconductor

Datasheet
Download 2SC5827 Datasheet


Hitachi Semiconductor 2SC5827

2SC5827; o base voltage Collector current Collect or power dissipation Junction temperatu re Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 15 5.5 1.5 80 80 150 −55 to +150 Unit V V V mA m W °C °C Electrical Characteristics ( Ta = 25 °C) Item Collector to base bre akdown voltage Collector cutoff current Collector cutoff current Emitter cutof f current DC current tr.


Hitachi Semiconductor 2SC5827

ansfer ratio Collector output capacitanc e Gain bandwidth product Power gain www .DataSheet4U.com Noise figure Symbol V( BR)CBO ICBO ICEO IEBO hFE Cob fT PG NF Min 15    100  1.5 10.5  Typ     120 0.85 4.5 13.5 1.1 Max  0.1 1 0.1 150 1.15   1.8 Unit V µA µA µA  pF GHz dB dB Test conditions IC = 10 µA, IE = 0 VC B = 15 V, IE = 0 VCE = 5.5 V, RBE = Infinite VEB.


Hitachi Semiconductor 2SC5827

= 1.5 V, IC = 0 VCE = 1 V, IC = 5 mA VC B = 1 V, IE = 0, f = 1 MHz VCE = 1 V, I C = 5 mA VCE = 1 V, IC = 5 mA, f = 900 MHz VCE = 1 V, IC = 5 mA, f = 900 MHz Rev.0, Nov. 2001, page 2 of 10 2SC5827 Collector Power Dissipation Curve Coll ector Power Dissipation PC (mW) 100 Co llector Current IC (mA) 20 Typical Ou tput Characteristics 160 µA 140 µA 12 0 µA 100 µA 80 60 .

Part

2SC5827

Description

Silicon NPN Epitaxial Type Transistor



Feature


2SC5827 Silicon NPN Epitaxial VHF/UHF wi de band amplifier ADE–208–1464(Z) Rev.0 Nov. 2001 Features • Super comp act package: MFPAK (1.4 x 0.8 x 0.59 mm ) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is WW–”. www.DataSheet4U.com 2SC5827 Absolute Maximum Ratings (Ta = 25 °C) Item Collector to base voltage Collect or to emitter voltage Emitter t.
Manufacture

Hitachi Semiconductor

Datasheet
Download 2SC5827 Datasheet




 2SC5827
2SC5827
Silicon NPN Epitaxial
VHF/UHF wide band amplifier
Features
Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm)
Outline
MFPAK
Note: Marking is “WW–”.
www.DataSheet4U.com
3
1
2 1. Emitter
2. Base
3. Collector
ADE–208–1464(Z)
Rev.0
Nov. 2001




 2SC5827
2SC5827
Absolute Maximum Ratings
(Ta = 25 °C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
VEBO
IC
Pc
Tj
Tstg
Ratings
15
5.5
1.5
80
80
150
55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25 °C)
Item
Collector to base breakdown
voltage
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Powwwewr .gDaaitnaSheet4U.com
Symbol Min
V(BR)CBO
15
ICBO
ICEO
IEBO
hFE 100
Cob
fT 1.5
PG 10.5
Noise figure
NF
Typ
120
0.85
4.5
13.5
1.1
Max
0.1
1
0.1
150
1.15
1.8
Unit
V
µA
µA
µA
pF
GHz
dB
dB
Test conditions
IC = 10 µA, IE = 0
VCB = 15 V, IE = 0
VCE = 5.5 V, RBE = Infinite
VEB = 1.5 V, IC = 0
VCE = 1 V, IC = 5 mA
VCB = 1 V, IE = 0, f = 1 MHz
VCE = 1 V, IC = 5 mA
VCE = 1 V, IC = 5 mA,
f = 900 MHz
V = 1 V, I = 5 mA,
CE C
f = 900 MHz
Rev.0, Nov. 2001, page 2 of 10




 2SC5827
Collector Power Dissipation Curve
100
80
60
40
20
0 50 100 150 200 250
Ambient Temperature Ta (°C)
2SC5827
Typical Output Characteristics
20 160 µA 140 µA
120 µA
16
100 µA
12 80 µA
60 µA
8
40 µA
4 IB = 20 µA
0 1 2 3 4 56
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
25
VCE = 1 V
20
15
www.DataSheet4U.com
10
5
0 0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage VBE (V)
DC Current Transfer Ratio vs.
Collector Current
200
VCE = 1 V
100
0
0.1 1.0 10 100
Collector Current IC (mA)
Rev.0, Nov. 2001, page 3 of 10



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