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type Transistor. 2SC5829 Datasheet

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type Transistor. 2SC5829 Datasheet






2SC5829 Transistor. Datasheet pdf. Equivalent




2SC5829 Transistor. Datasheet pdf. Equivalent





Part

2SC5829

Description

Silicon NPN epitaxial planar type Transistor



Feature


Transistors 2SC5829 Silicon NPN epitaxi al planar type For high speed switching ■ Features • Allowing the small cu rrent and low voltage operation • Hig h transition frequency fT • Suitable for high-density mounting and downsizin g of the equipment for Ultraminiature l eadless package 0.6 mm × 1.0 mm (heigh t 0.39 mm) 0.60±0.05 3 2 Unit: mm 1 1.00±0.05 0.39+0.01 −0.03 .
Manufacture

Panasonic Semiconductor

Datasheet
Download 2SC5829 Datasheet


Panasonic Semiconductor 2SC5829

2SC5829; 0.25±0.05 0.25±0.05 1 Parameter Coll ector-base voltage (Emitter open) Colle ctor-emitter voltage (Base open) Emitte r-base voltage (Collector open) Collect or current Collector power dissipation Junction temperature Storage temperatur e Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 10 7 2 10 50 150 −55 to +150 Unit V V V mA mW °C °C 0.50±0.05 ■ Absolute Maximum Rating.


Panasonic Semiconductor 2SC5829

s Ta = 25°C 3 0.65±0.01 2 0.05±0.0 3 1: Base 2: Emitter 3: Collector ML3- N2 Package Marking Symbol: X ■ Elec trical Characteristics Ta = 25°C ± 3 C Parameter Collector-base cutoff curr ent (Emitter open) Emitter-base cutoff current (Collector open) www.DataSheet4 U.com Forward current transfer ratio Tr ansition frequency Collector output cap acitance (Common base, inp.


Panasonic Semiconductor 2SC5829

ut open circuited) Forward transfer gain Maximum unilateral power gain Noise fi gure Symbol ICBO IEBO hFE fT Cob S21 e2 GUM NF Conditions VCB = 10 V, IE = 0 VEB = 1.5 V, IC = 0 VCE = 1 V, IC = 1 mA VCE = 1 V, IC = 1 mA, f = 0.8 GHz VCB = 1 V, IE = 0, f = 1 MHz VCE = 1 V , IC = 1 mA, f = 0.8 GHz VCE = 1 V, IC = 1 mA, f = 0.8 GHz VCE = 1 V, IC = 1 m A, f = 0.8 GHz 100 4 0.

Part

2SC5829

Description

Silicon NPN epitaxial planar type Transistor



Feature


Transistors 2SC5829 Silicon NPN epitaxi al planar type For high speed switching ■ Features • Allowing the small cu rrent and low voltage operation • Hig h transition frequency fT • Suitable for high-density mounting and downsizin g of the equipment for Ultraminiature l eadless package 0.6 mm × 1.0 mm (heigh t 0.39 mm) 0.60±0.05 3 2 Unit: mm 1 1.00±0.05 0.39+0.01 −0.03 .
Manufacture

Panasonic Semiconductor

Datasheet
Download 2SC5829 Datasheet




 2SC5829
Transistors
2SC5829
Silicon NPN epitaxial planar type
For high speed switching
Features
Allowing the small current and low voltage operation
High transition frequency fT
Suitable for high-density mounting and downsizing of the equip-
ment for Ultraminiature leadless package
0.6 mm × 1.0 mm (height 0.39 mm)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
10
7
2
10
50
150
55 to +150
Unit
V
V
V
mA
mW
°C
°C
Unit: mm
32
1.00±0.05
1
0.39+00..0013
0.25±0.05
0.25±0.05
1
32
0.65±0.01
0.05±0.03
Marking Symbol: X
1: Base
2: Emitter
3: Collector
ML3-N2 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0
www.DEamtaittSerh-beaeset4cUut.ocfof cmurrent (Collector open) IEBO VEB = 1.5 V, IC = 0
Forward current transfer ratio
hFE VCE = 1 V, IC = 1 mA
Transition frequency
fT VCE = 1 V, IC = 1 mA, f = 0.8 GHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 1 V, IE = 0, f = 1 MHz
1 µA
1 µA
100 200
4 GHz
0.4 pF
Forward transfer gain
Maximum unilateral power gain
Noise figure
S21e2
GUM
NF
VCE = 1 V, IC = 1 mA, f = 0.8 GHz
VCE = 1 V, IC = 1 mA, f = 0.8 GHz
VCE = 1 V, IC = 1 mA, f = 0.8 GHz
6 dB
15 dB
3.5 dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2002
SJC00287AED
1




 2SC5829
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
www.DataShoenett4hUe.csoymstems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL




 2SC5829
2SC5829
PC Ta
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
IC VCE
6
Ta = 25°C
5 IB = 50 µA
45 µA
4 40 µA
35 µA
30 µA
3
25 µA
20 µA
2
15 µA
10 µA
1
5 µA
0
0123456
Collector-emitter voltage VCE (V)
VCE(sat) IC
1
IC / IB = 10
0.1 Ta = 75°C
25°C
25°C
0.01
1
10 100 1 000
Collector current IC (mA)
www.DataSheet4U.com
hFE IC
200
VCE = 1 V
160 Ta = 75°C
120
25°C
80
25°C
40
0
0.1 1 10 100
Collector current IC (mA)
IC VBE
60
VCE = 1 V
50
Ta = 75°C
40
25°C
25°C
30
20
10
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
Cob VCB
10
f = 1 MHz
Ta = 25°C
1
0.1
0 2 4 6 8 10 12
Collector-base voltage VCB (V)
2 SJC00287AED



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