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Silicon Transistor. 2SC5823 Datasheet

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Silicon Transistor. 2SC5823 Datasheet






2SC5823 Transistor. Datasheet pdf. Equivalent




2SC5823 Transistor. Datasheet pdf. Equivalent





Part

2SC5823

Description

NPN Triple Diffused Planar Silicon Transistor



Feature


Ordering number : ENN7785 2SC5823 NPN T riple Diffused Planar Silicon Transisto r 2SC5823 Switching Regulator Applicat ions Features • • • • Package Dimensions unit : mm 2045B [2SC5823] 6. 5 5.0 4 High breakdown voltage. High-s peed switching. Wide ASO. Adoption of M BIT process. 1.5 2.3 0.5 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 1 2 3 7.5 0.5 1 : Base 2 : Collect.
Manufacture

Sanyo Semicon Device

Datasheet
Download 2SC5823 Datasheet


Sanyo Semicon Device 2SC5823

2SC5823; or 3 : Emitter 4 : Collector 2.3 2.3 S ANYO : TP unit : mm 2044B [2SC5823] 6. 5 5.0 4 2.3 1.5 0.5 www.DataSheet4U. com 5.5 7.0 0.85 1 0.6 0.5 0.8 2 3 2.5 1.2 1.2 0 ‘0.2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SAN YO : TP-FA 2.3 2.3 Any and all SANYO products described or contained herein do not have specifications that can ha ndle applications th.


Sanyo Semicon Device 2SC5823

at require extremely high levels of reli ability, such as life-support systems, aircraft's control systems, or other ap plications whose failure can be reasona bly expected to result in serious physi cal and/or material damage. Consult wit h your SANYO representative nearest you before using any SANYO products descri bed or contained herein in such applica tions. SANYO assum.


Sanyo Semicon Device 2SC5823

es no responsibility for equipment failu res that result from using products at values that exceed, even momentarily, r ated values (such as maximum ratings, o perating condition ranges, or other par ameters) listed in products specificati ons of any and all SANYO products descr ibed or contained herein. SANYO Electr ic Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg.

Part

2SC5823

Description

NPN Triple Diffused Planar Silicon Transistor



Feature


Ordering number : ENN7785 2SC5823 NPN T riple Diffused Planar Silicon Transisto r 2SC5823 Switching Regulator Applicat ions Features • • • • Package Dimensions unit : mm 2045B [2SC5823] 6. 5 5.0 4 High breakdown voltage. High-s peed switching. Wide ASO. Adoption of M BIT process. 1.5 2.3 0.5 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 1 2 3 7.5 0.5 1 : Base 2 : Collect.
Manufacture

Sanyo Semicon Device

Datasheet
Download 2SC5823 Datasheet




 2SC5823
Ordering number : ENN7785
Features
High breakdown voltage.
High-speed switching.
Wide ASO.
Adoption of MBIT process.
2SC5823
NPN Triple Diffused Planar Silicon Transistor
2SC5823
Switching Regulator Applications
Package Dimensions
unit : mm
2045B
[2SC5823]
6.5
5.0 2.3
4 0.5
www.DataSheet4U.com
0.85
0.7
1.2
0.6
12 3
2.3 2.3
0.5
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
unit : mm
2044B
[2SC5823]
6.5 2.3
5.0 0.5
4
0.85
1
0.6
2
3
2.3 2.3
0.5
1.2
0 0.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
63004CB TS IM TA-101180 No.7785-1/4




 2SC5823
2SC5823
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW300µs, duty cycle10%
Tc=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
hFE3
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=400V, IE=0
VEB=5V, IC=0
VCE=5V, IC=0.1A
VCE=5V, IC=0.7A
VCE=5V, IC=1mA
VCE=10V, IC=0.1A
VCB=10V, f=1MHz
IC=0.7A, IB=0.14A
IC=0.7A, IB=0.14A
IC=1mA, IE=0
IC=5mA, RBE=
IE=1mA, IC=0
IC=1A, IB1=0.2A, IB2=--0.4A,RL=200, VCC=200V
IC=1A, IB1=0.2A, IB2=--0.4A,RL=200, VCC=200V
IC=1A, IB1=0.2A, IB2=--0.4A,RL=200, VCC=200V
Ratings
700
400
8
1.5
3
0.7
1.0
10
150
--55 to +150
Ratings
min typ
20
10
10
20
10
700
400
8
max
10
10
50
0.8
1.5
0.5
2.5
0.25
Unit
V
V
V
A
A
A
W
W
°C
°C
Unit
µA
µA
MHz
pF
V
V
V
V
V
µs
µs
µs
Switching Time Test Circuit
PW=20µs
D.C.1%
www.DataSheet4U.com
INPUT
VR
IB1
IB2
RB
50
+
100µF
VBE= --5V
OUTPUT
RL
+
470µF
VCC=200V
IC -- VCE
2.0
1.8
450mA 400mA
1.6
1.4
1.2
1.0
0.8
350mA
300mA
250mA
200mA
150mA
100mA
50mA
0.6 20mA
0.4 10mA
0.2
0 IB=0
0 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V IT06213
IC -- VBE
2.0
VCE=5V
1.5
1.0
0.5
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltag, VBE -- V IT06214
No.7785-2/4




 2SC5823
2SC5823
hFE -- IC
3
2 VCE=5V
100
7 Ta=120°C
5 25°C
3 --40°C
2
10
7
5
3
2
1.0
0.001 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3
Collector Current, IC -- A
IT06215
VBE(sat) -- IC
5
IC / IB=5
3
2
1.0 25°C Ta= --40°C
7
120°C
5
3
2
VCE(sat) -- IC
10
7 IC / IB=5
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.01
10
7
5
Ta=--40°C120°C
25°C
2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
Collector Current, IC -- A
IT06216
SW Time -- IC
IC / IB1=5
IB2 / IB1=2
R load
3 tstg
2
1.0
7
5 tf
3
2
0.1
0.01
23
10
7
5 ICP=3A
3
2 IC=1.5A
1.0
7
5
3
www.DataSheet4U2 .com
0.1
7
5
3
2
5 7 0.1
2 3 5 7 1.0
Collector Current, IC -- A
Forward Bias A S O
23
IT06217
PC =10W
10m1sms3PT00=µ1s00µs
DC operation
0.01
7
5
3
2
Tc=25°C
Single pulse
0.001
1.0 2 3 5 7 10
2 3 5 7 100 2 3
Collector-to-Emitter Voltage, VCE -- V
PC -- Ta
1.2
5 7 1000
IT06219
0.1
0.1
10
7
5
3
2
23
5 7 1.0
Collector Current, IC -- A
Reverse Bias A S O
23
IT06218
1.0
7
5
3
2
0.1
7
5
3 Tc=25°C
2 IB2= --0.3A
L=500µH, Single pulse
0.01
10
23
5 7 100
23
5
Collector-to-Emitter Voltage, VCE -- V
PC -- Tc
12
7 1000
IT06220
1.0 10
0.8
0.6 No heat sink
0.4
8
6
4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT06665
2
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT06222
No.7785-3/4



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